公开(公告)号：WO2013005701A1

公开(公告)日：2013-01-10

申请号：PCT/JP2012/066837

申请日：2012-06-26

Applicant: CANON KABUSHIKI KAISHA ,  HAYASHI, Jumpei ,  TAKEDA, Kenichi ,  KOYAMA, Shinya ,  AKASHI, Kenichi ,  FURUTA, Tatsuo

Inventor： HAYASHI, Jumpei ,  TAKEDA, Kenichi ,  KOYAMA, Shinya ,  AKASHI, Kenichi ,  FURUTA, Tatsuo

IPC: H02N2/16 ,  H01L41/09 ,  H01L41/187 ,  H02N2/10 ,  B41J2/14 ,  C04B35/468 ,  G02B7/00

CPC classification number: H01L41/083 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/6261 ,  C04B35/62685 ,  C04B35/63416 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/40 ,  C04B2235/449 ,  C04B2235/652 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/78 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/85 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/1871 ,  H02N2/106 ,  H02N2/163

Abstract: A lead-free piezoelectric element that stably operates in a wide operating temperature range contains a lead-free piezoelectric material. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric material that includes a perovskite-type metal oxide represented by (Ba 1 -xCa x )a(Ti 1-y Zr y )O 3 (1.00≤a ≤1.01, 0.02≤x≤0.30, 0.020 ≤y≤ 0.095, and y≤x) as a main component and manganese incorporated in the perovskite-type metal oxide. The manganese content relative to 100 parts by weight of the perovskite-type metal oxide is 0.02 parts by weight or more and 0.40 parts by weight or less on a metal basis.

Abstract translation: 在宽工作温度范围内稳定工作的无铅压电元件包含无铅压电材料。 压电元件包括​​第一电极，第二电极和压电材料，其包括由（Ba1-xCax）a（Ti1-yZry）O3（1.00 = a = 1.01,0.02 = x = 0.30）表示的钙钛矿型金属氧化物 ，0.020 = y = 0.095，y = x）作为主成分，掺入钙钛矿型金属氧化物中的锰。 相对于100重量份的钙钛矿型金属氧化物的锰含量为0.02重量份以上且0.40重量份以下。

公开(公告)号：WO2011108732A4

公开(公告)日：2011-09-09

申请号：PCT/JP2011/055153

申请日：2011-02-28

Applicant: CANON KABUSHIKI KAISHA ,  KYOTO UNIVERSITY ,  KUBOTA, Makoto ,  TAKEDA, Kenichi ,  HAYASHI, Jumpei ,  SHIMADA, Mikio ,  SHIMAKAWA, Yuichi ,  AZUMA, Masaki ,  NAKAMURA, Yoshitaka ,  KAWAI, Masanori

Inventor： KUBOTA, Makoto ,  TAKEDA, Kenichi ,  HAYASHI, Jumpei ,  SHIMADA, Mikio ,  SHIMAKAWA, Yuichi ,  AZUMA, Masaki ,  NAKAMURA, Yoshitaka ,  KAWAI, Masanori

IPC: H01L41/18 ,  H01L41/22 ,  H01L41/09 ,  B41J2/14

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≤c/a≤1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

公开(公告)号：WO2004068605A1

公开(公告)日：2004-08-12

申请号：PCT/JP2004/000964

申请日：2004-01-30

Applicant: CANON KABUSHIKI KAISHA ,  SHIMIZU, Masaru ,  IFUKU, Toshihiro ,  TAKEDA, Kenichi ,  FUKUI, Tetsuro ,  AOKI, Katsumi ,  MATSUDA, Takanori

Inventor： SHIMIZU, Masaru ,  IFUKU, Toshihiro ,  TAKEDA, Kenichi ,  FUKUI, Tetsuro ,  AOKI, Katsumi ,  MATSUDA, Takanori

IPC: H01L41/09

CPC classification number: H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

Abstract: A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

Abstract translation: 一种包括上电极，压电和/或电致伸缩材料和下电极的压电元件，其特征在于压电和/或电致伸缩材料是由通式ABO 3构成的复合氧化物，压电和/或电致伸缩材料具有 双晶。

公开(公告)号：WO2008010583A1

公开(公告)日：2008-01-24

申请号：PCT/JP2007/064384

申请日：2007-07-13

Applicant: CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY ,  IFUKU, Toshihiro ,  TAKEDA, Kenichi ,  FUKUI, Tetsuro ,  FUNAKUBO, Hiroshi

Inventor： IFUKU, Toshihiro ,  TAKEDA, Kenichi ,  FUKUI, Tetsuro ,  FUNAKUBO, Hiroshi

IPC: C30B29/32 ,  B41J2/045 ,  B41J2/055 ,  B41J2/16 ,  C04B35/46 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22

CPC classification number: B41J2/161 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO 3 , where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract translation: 由ABO 3制成的具有钙钛矿型结构的氧化物的压电体，其中A的主成分为Pb，B的主要成分含有Nb， Mg，Zn，Sc，Cd，Ni，Mn，Co，Yb，In和Fe以及Ti，其特征在于单轴取向晶体或单晶，其具有四方晶的a畴和c畴。

公开(公告)号：WO2006078041A1

公开(公告)日：2006-07-27

申请号：PCT/JP2006/301073

申请日：2006-01-18

Applicant: CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY ,  FUKUI, Tetsuro ,  TAKEDA, Kenichi ,  IFUKU, Toshihiro ,  FUNAKUBO, Hiroshi ,  YOKOYAMA, Shintaro ,  KIM, Yong, Kwan ,  NAKAKI, Hiroshi ,  UENO, Risako ,  OKAMOTO, Shoji

Inventor： FUKUI, Tetsuro ,  TAKEDA, Kenichi ,  IFUKU, Toshihiro ,  FUNAKUBO, Hiroshi ,  YOKOYAMA, Shintaro ,  KIM, Yong, Kwan ,  NAKAKI, Hiroshi ,  UENO, Risako ,  OKAMOTO, Shoji

IPC: H01L41/09 ,  H01L41/24

CPC classification number: B41J2/161 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316 ,  H01L41/319

Abstract: A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of said piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of }10 with respect to the surface of said substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

Abstract translation: 压电体元件具有与基板上的压电体膜连接的压电体膜和一对电极，所述压电体膜的主要成分为Pb（Zr，Ti）O 3，Zr /（Zr + Ti）超过0.4但小于0.7时，压电体膜是至少具有相对于所述基板的表面的×10°的四方晶体a畴和c域的膜， c结构域与a域和c域的总和的比率等于或大于20％且等于或小于60％。

公开(公告)号：WO2011108732A3

公开(公告)日：2012-01-12

申请号：PCT/JP2011055153

申请日：2011-02-28

Applicant: CANON KK ,  UNIV KYOTO ,  KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

Inventor： KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

IPC: H01L41/18 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  C04B35/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/317 ,  H01L41/39 ,  H02N2/00

CPC classification number: H01L41/1878 ,  B41J2/14233 ,  H01L41/0478 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/318 ,  H02N2/106 ,  H02N2/163 ,  Y10T29/42

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Abstract translation: 提供一种压电薄膜，其具有混合菱方结构和四边形结构的压电性，以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物，其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系，以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括​​在基板上：上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。

公开(公告)号：WO2011108732A2

公开(公告)日：2011-09-09

申请号：PCT/JP2011055153

申请日：2011-02-28

Applicant: CANON KK ,  UNIV KYOTO ,  KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

Inventor： KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

IPC: H01L41/18 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  C04B35/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/317 ,  H01L41/39 ,  H02N2/00

CPC classification number: H01L41/1878 ,  B41J2/14233 ,  H01L41/0478 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/318 ,  H02N2/106 ,  H02N2/163 ,  Y10T29/42

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Abstract translation: 提供一种压电薄膜，其具有混合菱方结构和四边形结构的压电性，以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物，其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系，以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括​​在基板上：上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。

公开(公告)号：WO1997011485A1

公开(公告)日：1997-03-27

申请号：PCT/JP1996002591

申请日：1996-09-11

Applicant: HITACHI, LTD. ,  TAKEDA, Kenichi ,  HINODE, Kenji ,  MIYAZAKI, Hiroshi ,  KONDO, Seiichi

Inventor： HITACHI, LTD.

IPC: H01L21/3205

CPC classification number: H01L21/76877 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided with copper-alloy interconnection which has a line width narrower than that the conventional copper interconnection, a low resistance and a high reliability. A method of manufacturing the semiconductor device is also disclosed. An opening (400) in an insulating film (201) formed on a semiconductor substrate (100) is filled with interconnection (302A) made of an alloy of copper and an element which accelerates the surface diffusion of copper. Since the interconnection contains copper and the element which accelerates the surface diffusion of copper, the opening (400) having an extremely narrow width is filled with the copper alloy (302) extremely easily and a highly reliable fine copper-alloy interconnection (302A) can be obtained.

Abstract translation: 具有铜合金互连的半导体器件，其宽度比常规铜互连线宽窄，电阻低，可靠性高。 还公开了制造半导体器件的方法。 形成在半导体衬底（100）上的绝缘膜（201）中的开口（400）填充有由铜合金制成的互连（302A）和加速铜的表面扩散的元素。 由于互连包含铜和加速铜的表面扩散的元素，所以具有非常窄的宽度的开口（400）非常容易地被铜合金（302）填充，并且高度可靠的细铜合金互连（302A）可以 得到。

公开(公告)号：WO1989001872A1

公开(公告)日：1989-03-09

申请号：PCT/JP1988000850

申请日：1988-08-26

Applicant: DAI NIPPONN INSATSU KABUSHIKI KAISHA ,  MATSUO, Makoto ,  TAKIGUCHI, Ryohei ,  ANDO, Masayuki ,  TSUCHIYA, Mitsuru ,  TAKE, Seiji ,  IGARASHI, Kazue ,  TAKEDA, Kenichi

Inventor： DAI NIPPONN INSATSU KABUSHIKI KAISHA

IPC: B41N01/24

CPC classification number: B41N1/241 ,  Y10S428/913 ,  Y10S428/914 ,  Y10S430/146 ,  Y10T156/10 ,  Y10T428/24802 ,  Y10T428/24942

Abstract: A heat-sensitive mimeotype stencil paper which comprises a porous support (1) having provided on one side thereof a thermoplastic film (3) with an adhesive layer (2) therebetween. Since the adhesive layer (2) comprises an ionizing radiation-hardenable adhesive, tight adhesion between the porous support (1) and the thermoplastic film (3) can be rapidly attained. Furthermore the plate wear is improved and well-defined printed images can be obtained.

公开(公告)号：JPS5620047A

公开(公告)日：1981-02-25

申请号：JP9613279

申请日：1979-07-30

Applicant: TAKEDA KENICHI ,  IIO HIDEO

Inventor： IIO HIDEO

IPC: C08L27/00 ,  C08G59/00 ,  C08L1/00 ,  C08L7/00 ,  C08L21/00 ,  C08L33/00 ,  C08L33/02 ,  C08L63/00 ,  C09D163/00

Abstract: PURPOSE:Titled composition which can form stable films, does not tend toward adhering to the surfaces of coating tools, and can be applied in one simple step, prepared by mixing and stirring, at the time of use, a curing agent in an amount necessary for curing the epoxy resin contained. CONSTITUTION:A compounded composition which provides a coating which can be applied without adhering to the surface of trowels or rollers, which composition is prepared by mixing and stirring, at the time of use, a curing agent in an amount necessary for curing epoxy resin and the vehicle of which composition comprises 55-75pts.wt. of a reactive epoxy resin, 3-10pts.wt. of a vinyl chloride copolymer, a fat and oil having drying properties, 5-10pts.wt. of an alcohol which is at least monohydric (or a volatile hydrocarbon) and, if necessary, an inorganic or organic filler.