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1.发明申请SACRIFICIAL SURFACTANATED PRE-WET FOR DEFECT REDUCTION IN A SEMICONDUCTOR PHOTOLITHOGRAPHY DEVELOPING PROCESS 审中-公开在半导体光电成像开发过程中减少缺陷的预处理预湿
公开(公告)号：WO2005034211A3
公开(公告)日：2005-08-04
申请号：PCT/US2004032171
申请日：2004-09-30
Applicant: TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , KULP JOHN M
Inventor： KULP JOHN M
CPC classification number: G03F7/322
Abstract: A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
Abstract translation: 一种在基板上显影抗蚀剂的方法和设备，其中首先将含有牺牲性表面活性剂的液体施加到抗蚀剂上作为预处理，以减少显影工艺缺陷并改善显影工艺时间和抗蚀剂的均匀性。 在预处理之后，向抗蚀剂供应显影液，然后显影抗蚀剂。
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2.发明申请SACRIFICIAL SURFACTANATED PRE-WET FOR DEFECT REDUCTION IN A SEMICONDUCTOR PHOTOLITHOGRAPHY DEVELOPING PROCESS 审中-公开半导体光刻技术开发过程中减少缺陷的极化表面活性剂
公开(公告)号：WO2005034211A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/032171
申请日：2004-09-30
Applicant: TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KULP, John, M.
Inventor： KULP, John, M.
IPC: H01L21/00
CPC classification number: G03F7/322
Abstract: A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
Abstract translation: 一种用于在基板上显影抗蚀剂的方法和装置，其中先将含牺牲表面活性剂的液体施加到抗蚀剂上作为预处理，以减少显影工艺缺陷并改善显影处理时间和抗蚀剂的均匀性。 预处理之后，向抗蚀剂供给显影液，然后显影抗蚀剂。
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