公开(公告)号：US20070125299A1

公开(公告)日：2007-06-07

申请号：US11601718

申请日：2006-11-20

Applicant: Neil D'Souza ,  Phillip Jennings ,  Keerthi Devendra

Inventor： Neil D'Souza ,  Phillip Jennings ,  Keerthi Devendra

IPC: C30B11/00 ,  C30B9/00 ,  C30B17/00

CPC classification number: C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2. In such circumstances, a connector channel can be provided with a radius r=R/4 in an area between the periphery of the seed and the locus of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

Abstract translation: 以前已经使用许多技术来形成单晶或预定的晶体学组件和制品。 这些技术中的每一种都有自己的特殊问题，包括对误差的敏感性。 通过利用双晶实验来确定熔体回缩长度LM，并且考虑到晶种周边上潜在的起始成核点的入口距离d，可以确定最大入口长度d。 通过确保最大入口长度d小于或等于籽晶直径R，可以将位点从潜在成核点C 1，C 2 2投影到 杂散粒子传播的潜在半径条件。 由于晶种将具有已知的晶体取向，所以可以考虑晶体的两个发散生长曲线，就是从点C 1，C 2 2传播的杂散晶粒， / SUB>。 在这种情况下，连接器通道可以在种子周边与杂散颗粒最大进入距离d的轨迹之间的区域中具有半径r = R / 4。 在发现d超过晶体半径R的情况下，可以理解，为了改变最大入口距离d，所使用的实际晶体直径R可以增加或相对于熔体返回长度LM进行调整。

公开(公告)号：US4836268A

公开(公告)日：1989-06-06

申请号：US137527

申请日：1987-12-23

Applicant: Keerthi Devendra

Inventor： Keerthi Devendra

IPC: B22C9/10 ,  B22D29/00 ,  C04B38/00

CPC classification number: B22D29/002 ,  B22C9/10

Abstract: This invention relates to a method of enhancing the leaching rate of a given material. The material is provided with a plurality of pores 16 each of which contain a gas, such as for example air, which is intermittantly exposed to the leaching solution 20 by the action of said leaching solution and acts to promote the rapid removal of the reaction product away from the core/leading solution interface 22.

Abstract translation: 本发明涉及提高给定材料浸出率的方法。 该材料设置有多个孔16，每个孔含有诸如空气的气体，其通过所述浸出溶液的作用间歇地暴露于浸出溶液20，并用于促进反应产物的快速除去 远离核心/领先解决方案界面22。

公开(公告)号：US08382899B2

公开(公告)日：2013-02-26

申请号：US12219801

申请日：2008-07-29

Applicant: Neil J D'Souza ,  Philip A Jennings ,  Keerthi Devendra

Inventor： Neil J D'Souza ,  Philip A Jennings ,  Keerthi Devendra

IPC: C30B29/02

CPC classification number: C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilization of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2. In such circumstances, a connector channel can be provided with a radius r=R/4 in an area between the periphery of the seed and the locus of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

Abstract translation: 以前已经使用许多技术来形成单晶或预定的晶体学组件和制品。 这些技术中的每一种都有自己的特殊问题，包括对误差的敏感性。 通过利用双晶实验来确定熔体回缩长度LM，并且考虑到晶种周边上潜在的起始成核点的入口距离d，可以确定最大入口长度d。 通过确保最大入口长度d小于或等于晶种直径R，可以根据杂散晶粒传播的电位半径从潜在成核点C1，C2投影轨迹。 由于籽晶将具有已知的晶体取向，因此可以从从C1，C2点传播的杂散晶粒考虑晶体的两个发散生长曲线。 在这种情况下，连接器通道可以在种子周边与杂散颗粒最大进入距离d的轨迹之间的区域中具有半径r = R / 4。 在发现d超过晶体半径R的情况下，可以理解，为了改变最大入口距离d，所使用的实际晶体直径R可以增加或相对于熔体返回长度LM进行调整。

公开(公告)号：US07449063B2

公开(公告)日：2008-11-11

申请号：US11601718

申请日：2006-11-20

Applicant: Neil J D'Souza ,  Philip A Jennings ,  Keerthi Devendra

Inventor： Neil J D'Souza ,  Philip A Jennings ,  Keerthi Devendra

IPC: C30B25/12

CPC classification number: C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2. In such circumstances, a connector channel can be provided with a radius r=R/4 in an area between the periphery of the seed and the locus of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

Abstract translation: 以前已经使用许多技术来形成单晶或预定的晶体学组件和制品。 这些技术中的每一种都有自己的特殊问题，包括对误差的敏感性。 通过利用双晶实验来确定熔体回缩长度LM，并且考虑到晶种周边上潜在的起始成核点的入口距离d，可以确定最大入口长度d。 通过确保最大入口长度d小于或等于籽晶直径R，可以将位点从潜在成核点C 1，C 2 2投影到 杂散粒子传播的潜在半径条件。 由于晶种将具有已知的晶体取向，所以可以考虑晶体的两个发散生长曲线，就是从点C 1，C 2 2传播的杂散晶粒， / SUB>。 在这种情况下，连接器通道可以在种子周边与杂散颗粒最大进入距离d的轨迹之间的区域中具有半径r = R / 4。 在发现d超过晶体半径R的情况下，可以理解，为了改变最大入口距离d，所使用的实际晶体直径R可以增加或相对于熔体返回长度LM进行调整。

公开(公告)号：US20080282972A1

公开(公告)日：2008-11-20

申请号：US12219801

申请日：2008-07-29

Applicant: Neil J. D'Souza ,  Philip A. Jennings ,  Keerthi Devendra

Inventor： Neil J. D'Souza ,  Philip A. Jennings ,  Keerthi Devendra

IPC: C30B28/10

CPC classification number: C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2. In such circumstances, a connector channel can be provided with a radius r=R/4 in an area between the periphery of the seed and the locus of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

Abstract translation: 以前已经使用许多技术来形成单晶或预定的晶体学组件和制品。 这些技术中的每一种都有自己的特殊问题，包括对误差的敏感性。 通过利用双晶实验来确定熔体回缩长度LM，并且考虑到晶种周边上潜在的起始成核点的入口距离d，可以确定最大入口长度d。 通过确保最大入口长度d小于或等于籽晶直径R，可以将位点从潜在成核点C 1，C 2 2投影到 杂散粒子传播的潜在半径条件。 由于晶种将具有已知的晶体取向，所以可以考虑晶体的两个发散生长曲线，就是从点C 1，C 2 2传播的杂散晶粒， / SUB>。 在这种情况下，连接器通道可以在种子周边与杂散颗粒最大进入距离d的轨迹之间的区域中具有半径r = R / 4。 在发现d超过晶体半径R的情况下，可以理解，为了改变最大入口距离d，所使用的实际晶体直径R可以增加或相对于熔体返回长度LM进行调整。