公开(公告)号：WO2012018983A3

公开(公告)日：2012-05-18

申请号：PCT/US2011046547

申请日：2011-08-04

Applicant: BREWER SCIENCE INC ,  WASHBURN CARLTON ASHLEY ,  LAMB III JAMES E ,  SMITH BRIAN ,  FURSE JUSTIN LEE ,  WANG HEPING

Inventor： WASHBURN CARLTON ASHLEY ,  LAMB III JAMES E ,  SMITH BRIAN ,  FURSE JUSTIN LEE ,  WANG HEPING

IPC: H01L21/027

CPC classification number: H01L21/0332 ,  G03F7/039 ,  G03F7/091 ,  G03F7/094 ,  Y10T428/24331 ,  Y10T428/30

Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.

Abstract translation: 公开了使用多层工艺形成微电子结构的方法。 所述方法包括在多层堆叠中使用与衬底表面相邻的显影剂可溶保护层，以在图案转印期间保护衬底。 在蚀刻之后，使用显影剂而不是以前的方法所需的蚀刻将图案转移到可显影剂可溶的保护层中。 可以使用传统的显影剂可溶性抗反射涂层和间隙填充材料来形成保护层。 具有显影剂溶解度的定制层也可以制备。 还公开了通过上述方法形成的微电子结构。

公开(公告)号：WO2012018983A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/046547

申请日：2011-08-04

Applicant: BREWER SCIENCE INC. ,  WASHBURN, Carlton Ashley ,  LAMB, III, James E. ,  SMITH, Brian ,  FURSE, Justin Lee ,  WANG, Heping

Inventor： WASHBURN, Carlton Ashley ,  LAMB, III, James E. ,  SMITH, Brian ,  FURSE, Justin Lee ,  WANG, Heping

IPC: H01L21/027

CPC classification number: H01L21/0332 ,  G03F7/039 ,  G03F7/091 ,  G03F7/094 ,  Y10T428/24331 ,  Y10T428/30

Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.

Abstract translation: 公开了使用多层工艺形成微电子结构的方法。 该方法包括在多层叠层中使用邻近衬底表面的显影剂可溶性保护层以在图案转印期间保护衬底。 蚀刻之后，使用显影剂将图案转印到显影剂可溶性保护层中，而不是通过先前方法所需的蚀刻。 常规的显影剂可溶性抗反射涂层和间隙填充材料可用于形成保护层。 也可以制备具有显影剂溶解度的定制层。 还公开了通过上述方法形成的微电子结构。