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    Method for reversibly mounting device wafer to carrier substrate
    1.
    发明专利
    Method for reversibly mounting device wafer to carrier substrate 有权
    用于将装置波形反向安装到载体基板的方法

    公开(公告)号：JP2012253367A

    公开(公告)日：2012-12-20

    申请号：JP2012162690

    申请日：2012-07-23

    Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

    Inventor： FRAME TONY D ,  JEREMY MCCUTCHAN

    IPC: H01L21/02 ,  H01L21/304 ,  H01L21/683

    CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/19041 ,  Y10T428/31678 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a new temporary bonding methods and articles formed from those methods.SOLUTION: The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low force and at or near room temperature at the appropriate stage in the fabrication process.

    Abstract translation: 要解决的问题：提供从这些方法形成的新的临时粘合方法和制品。 解决方案：这些方法包括仅在其外周界将器件晶片接合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。 通过该方法形成的边缘粘合剂是化学和耐热性的，但是也可以被软化，溶解或机械破坏，从而允许晶片在非常低的力下容易地分离，并且在制造过程的适当阶段和室温附近 。 版权所有（C）2013，JPO＆INPIT

    Method and apparatus for removing reversibly mounted device wafer from carrier substrate
    2.
    发明专利
    Method and apparatus for removing reversibly mounted device wafer from carrier substrate 有权
    用于从载体基板去除可逆安装设备的方法和装置

    公开(公告)号：JP2012004522A

    公开(公告)日：2012-01-05

    申请号：JP2010183931

    申请日：2010-08-19

    Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

    Inventor： JEREMY W MCCUTCHAN ,  ROBERT D BROWN

    IPC: H01L21/683 ,  H01L21/304

    CPC classification number: H01L21/187 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/68721 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1168 ,  Y10T156/1978 ,  Y10T156/1989

    Abstract: PROBLEM TO BE SOLVED: To provide an article and a method that can reduce or eliminate the chances for device wafer breakage and internal device damage.SOLUTION: New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The method comprises demounting a device wafer from a carrier wafer or a substrate that have been strongly bonded only at their outer perimeters. Edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.

    Abstract translation: 要解决的问题：提供可以减少或消除器件晶片断裂和内部器件损坏的机会的制品和方法。 提供了用于分离由这些方法和装置形成的临时，永久或半永久粘合的基底和物品的新的拆卸方法和装置。 该方法包括从仅在其外周强力结合的载体晶片或基板拆卸器件晶片。 边缘键化学，机械，声学或热软化，溶解或破坏，以允许晶片在非常低的力和在室温或在室温附近在制造过程中的适当阶段容易地分离。 还提供了一种用于便于分离键合衬底的夹具。 版权所有（C）2012，JPO＆INPIT

    Method of producing photolithographic structure with developer-trimmed hard mask
    5.
    发明专利
    Method of producing photolithographic structure with developer-trimmed hard mask 有权
    用开发硬质锯片生产光刻结构的方法

    公开(公告)号：JP2012238026A

    公开(公告)日：2012-12-06

    申请号：JP2012179714

    申请日：2012-08-14

    Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

    Inventor： SUN SAM X

    IPC: G03F7/11 ,  H01L21/027

    CPC classification number: G03F7/11 ,  H01L21/0271 ,  H01L21/312

    Abstract: PROBLEM TO BE SOLVED: To provide a novel, developer-soluble, hard mask composition and a method of using the composition to form a microelectronic structure.SOLUTION: The composition comprises a compound having the formula, a compound for controlling a development rate, and a crosslinking agent in a solvent system. The method involves applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, and subsequently, light exposure and developing, during which a light-exposed portion of the imaging layer and a hard mask composition adjacent to the light-exposed portion are removed, are performed. The size of the hard mask composition structure is controlled by the development rate, which yields a feature size that is a fraction of the imaging layer feature size, and finally gives a pattern that can ultimately be transferred to the substrate.

    Abstract translation: 要解决的问题：提供一种新型的显影剂可溶性硬掩模组合物和使用该组合物形成微电子结构的方法。 解决方案：组合物包含具有下式的化合物，用于控制显影速率的化合物和溶剂体系中的交联剂。 该方法包括将组合物施加到基底并固化组合物。 将成像层施加到组合物上，随后进行曝光和显影，其中去除了成像层的光曝光部分和与光曝光部分相邻的硬掩模组合物。 硬掩模组合物结构的尺寸由显影速率控制，其产生作为成像层特征尺寸的一部分的特征尺寸，并且最终给出最终可以转移到基底的图案。 版权所有（C）2013，JPO＆INPIT

    Anti-reflective coating composition with improved spin bowl compatibility
    8.
    发明专利
    Anti-reflective coating composition with improved spin bowl compatibility 有权
    抗反射涂层组合物具有改善的纺丝相容性

    公开(公告)号：JP2009037245A

    公开(公告)日：2009-02-19

    申请号：JP2008216969

    申请日：2008-08-26

    Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

    Inventor： SHAO XIE ,  MEADOR JIM D ,  BHAVE MANDAR ,  KRISHNAMURTHY VANDANA ,  NOWAK KELLY A ,  FOWLER MICHELLE ,  DESHPANDE SHREERAM V

    IPC: G03F7/11 ,  B32B7/02 ,  C08J3/24 ,  C09D5/00 ,  C09D7/12 ,  C09D105/00 ,  C09D133/00 ,  C09D161/20 ,  C09D163/00 ,  C09D167/00 ,  C09D171/00 ,  C09D179/08 ,  C09D201/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027

    CPC classification number: C08J3/241 ,  G03F7/091 ,  Y10S430/151

    Abstract: PROBLEM TO BE SOLVED: To provide an anti-reflective coating composition that does not crosslink prior to a bake stage in microlithographic processes so as to solve problems of spin bowl incompatibility and stability of an anti-reflective coating. SOLUTION: The anti-reflective composition includes a polymer dissolved or dispersed in a solvent system, a crosslinking agent, a light attenuating compound and a strong acid. The polymer is selected from a group consisting of acrylic polymers, polyesters, epoxy novolacs, polysaccharides, polyethers, polyimides and mixtures thereof. The crosslinking agent is selected from a group consisting of amino resin and epoxy resin. The light attenuating compound is selected from a group consisting of phenolic compounds, carboxylic acid, phosphoric acid, cyano compounds, benzene, naphthalene and anthracene. The composition contains the strong acid by less than 1.0 mass% based upon the total mass of the composition taken as 100 mass%. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供在微光刻工艺中在烘烤阶段之前不交联的抗反射涂料组合物，以解决纺丝碗不相容性和抗反射涂层的稳定性的问题。 抗反射组合物包括溶解或分散在溶剂体系中的聚合物，交联剂，光衰减化合物和强酸。 聚合物选自丙烯酸聚合物，聚酯，环氧酚醛清漆，多糖，聚醚，聚酰亚胺及其混合物。 交联剂选自氨基树脂和环氧树脂。 光衰减化合物选自酚类化合物，羧酸，磷酸，氰基化合物，苯，萘和蒽。 组合物以占组合物总质量的100质量％为基准，含有小于1.0质量％的强酸。 版权所有（C）2009，JPO＆INPIT

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