Abstract:
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.
Abstract:
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.
Abstract:
The invention provides methods and devices for fabricating printable semiconductor elements (555) and assembling printable semiconductor elements onto substrate surfaces (330). The present invention also provides stretchable semiconductor structures (760).
Abstract:
CPV modules include a back plate having an array of 1mm2 or smaller solar cells thereon. A backplane interconnect network is also provided on the back plate. This backplane interconnect network operates to electrically connect the array of solar cells together. A front plate, which is spaced-apart from the back plate, is provided. This front plate includes an array of primary lenses thereon that face the array of solar cells. The front plate can be configured to provide a greater than 1000X lens-to-cell light concentration to the array of solar cells. To achieve this 1000X lens-to-cell light concentration, the primary lenses can be configured as plano-convex lenses having a lens sag of less than about 4 mm. An array of secondary optical elements may also be provided, which extend between the array of primary lenses and the array of solar cells.
Abstract:
In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
Abstract:
A concentrated photovoltaic and display apparatus includes a backplane substrate, a plurality of photovoltaic elements distributed over the backplane substrate, a plurality of display elements distributed over the backplane substrate between the photovoltaic elements, and an optical element positioned over the backplane substrate, the photovoltaic elements, and the display elements. The optical element is configured to concentrate incident light propagating in a direction substantially parallel to an optical axis thereof onto the photovoltaic elements. The optical element is further configured to direct light reflected or emitted from the display elements in a direction that is not substantially parallel to the optical axis of the optical element. Related fabrication methods and arrays including the apparatus are also discussed.
Abstract:
A substrate includes an anchor area (30) physically secured to a surface of the substrate (10) and at least one printable electronic component (20). The at least one printable electronic component includes an active layer (14) having one or more active elements thereon, and is suspended over the surface of the substrate by electrically conductive breakable tethers (40). The electrically conductive breakable tethers include an insulating layer and a conductive layer thereon that physically secure and electrically connect the at least one printable electronic component to the anchor area, and are configured to be preferentially fractured responsive to pressure applied thereto. Related methods of fabrication and testing are also discussed.
Abstract:
A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.
Abstract:
A concentrated photovoltaic and display apparatus includes a backplane substrate, a plurality of photovoltaic elements distributed over the backplane substrate, a plurality of display elements distributed over the backplane substrate between the photovoltaic elements, and an optical element positioned over the backplane substrate, the photovoltaic elements, and the display elements. The optical element is configured to concentrate incident light propagating in a direction substantially parallel to an optical axis thereof onto the photovoltaic elements. The optical element is further configured to direct light reflected or emitted from the display elements in a direction that is not substantially parallel to the optical axis of the optical element. Related fabrication methods and arrays including the apparatus are also discussed.
Abstract:
Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.