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1.
公开(公告)号:WO2008156631A2
公开(公告)日:2008-12-24
申请号:PCT/US2008/007330
申请日:2008-06-12
Applicant: NANOGRAM CORPORATION , HIESLMAIR, Henry , MOSSO, Ronald, J. , SOLAYAPPAN, Narayan , CHIRUVOLU, Shivkumar , MORRIS, Julio, E.
Inventor: HIESLMAIR, Henry , MOSSO, Ronald, J. , SOLAYAPPAN, Narayan , CHIRUVOLU, Shivkumar , MORRIS, Julio, E.
IPC: C23C16/455 , C23C16/00 , H01L21/20
CPC classification number: C30B25/02 , C23C16/01 , C23C16/24 , C23C16/545 , C30B13/00 , C30B25/18 , C30B29/06 , H01L21/02488 , H01L21/02513 , H01L21/02532 , H01L31/1804 , H01L31/1872 , H01L31/202 , Y02E10/547 , Y02P70/521 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
Abstract: Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow. Thus, using this CVD configuration a relatively high deposition rate can be achieved while obtaining desired levels of coating uniformity. Deposition approaches are described to place one or more inorganic layers onto a release layer, such as a porous, particulate release layer. In some embodiments, the release layer is formed from a dispersion of submicron particles that are coated onto a substrate. The processes described can be effective for the formation of silicon films that can be separated with the use of a release layer into a silicon foil. The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.
Abstract translation: 使用定向反应物流和相对于流动移动的基底来描述亚大气压化学气相沉积。 因此,使用这种CVD构造可以获得相当高的沉积速率,同时获得所需的涂层均匀度。 描述沉积方法以将一个或多个无机层置于剥离层上,例如多孔的颗粒脱模层。 在一些实施方案中,释放层由涂覆在基材上的亚微米颗粒的分散体形成。 所描述的方法可以有效地形成可以使用剥离层分离成硅箔的硅膜。 硅箔可用于形成诸如显示电路或太阳能电池的一系列半导体器件。
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公开(公告)号:WO2009094176A2
公开(公告)日:2009-07-30
申请号:PCT/US2009000428
申请日:2009-01-23
Applicant: NANOGRAM CORP , BAILEY ROBERT J , SANDERS WILLIAM A , MOSSO RONALD J , HIESLMAIR HENRY , MORRIS JULIO E , MOGAARD MARTIN E , HERNANDEZ JACOB A
Inventor: BAILEY ROBERT J , SANDERS WILLIAM A , MOSSO RONALD J , HIESLMAIR HENRY , MORRIS JULIO E , MOGAARD MARTIN E , HERNANDEZ JACOB A
CPC classification number: C23C16/402 , C23C16/56 , Y10T156/17 , Y10T428/249967
Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.
Abstract translation: 描述了层转移方法以利用形成在多孔释放层上的大面积的薄无机箔。 特别地,由于无机箔可以由不会大量弯曲的陶瓷和/或结晶材料形成,所以描述了一些方法来提供沿着边缘的逐渐拉伸,以沿着弯曲表面将箔与保持表面分离,所述弯曲表面被设计成 不会使箔过度弯曲,使得箔在转印过程中基本上不被损坏。 描述了用摇摆运动或旋转的圆柱形表面进行传送的装置。 此外,多孔剥离层的稳定化可以提高形成在剥离层上的所得无机箔的质量。 特别地,火焰处理可以提供改善的剥离层性质,并且可以使用CVD沉积互穿稳定化组合物的沉积以稳定多孔层。
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公开(公告)号:WO2009094176A3
公开(公告)日:2009-07-30
申请号:PCT/US2009/000428
申请日:2009-01-23
Applicant: NANOGRAM CORPORATION , BAILEY, Robert, J. , SANDERS, William, A. , MOSSO, Ronald, J. , HIESLMAIR, Henry , MORRIS, Julio, E. , MOGAARD, Martin, E. , HERNANDEZ, Jacob, A.
Inventor: BAILEY, Robert, J. , SANDERS, William, A. , MOSSO, Ronald, J. , HIESLMAIR, Henry , MORRIS, Julio, E. , MOGAARD, Martin, E. , HERNANDEZ, Jacob, A.
IPC: C23C16/30 , C23C16/44 , H01L21/205
Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.
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4.
公开(公告)号:WO2008156631A3
公开(公告)日:2009-02-12
申请号:PCT/US2008007330
申请日:2008-06-12
Applicant: NANOGRAM CORP , HIESLMAIR HENRY , MOSSO RONALD J , SOLAYAPPAN NARAYAN , CHIRUVOLU SHIVKUMAR , MORRIS JULIO E
Inventor: HIESLMAIR HENRY , MOSSO RONALD J , SOLAYAPPAN NARAYAN , CHIRUVOLU SHIVKUMAR , MORRIS JULIO E
IPC: C23C16/455 , C23C16/00 , H01L21/205
CPC classification number: C30B25/02 , C23C16/01 , C23C16/24 , C23C16/545 , C30B13/00 , C30B25/18 , C30B29/06 , H01L21/02488 , H01L21/02513 , H01L21/02532 , H01L31/1804 , H01L31/1872 , H01L31/202 , Y02E10/547 , Y02P70/521 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
Abstract: Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow. Thus, using this CVD configuration a relatively high deposition rate can be achieved while obtaining desired levels of coating uniformity. Deposition approaches are described to place one or more inorganic layers onto a release layer, such as a porous, particulate release layer. In some embodiments, the release layer is formed from a dispersion of submicron particles that are coated onto a substrate. The processes described can be effective for the formation of silicon films that can be separated with the use of a release layer into a silicon foil. The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.
Abstract translation: 使用定向反应物流和相对于流动移动的基底来描述亚大气压化学气相沉积。 因此,使用这种CVD构造可以获得相当高的沉积速率,同时获得所需的涂层均匀度。 描述沉积方法以将一个或多个无机层置于剥离层上,例如多孔的颗粒脱模层。 在一些实施方案中,释放层由涂覆在基材上的亚微米颗粒的分散体形成。 所描述的方法可以有效地形成可以使用剥离层分离成硅箔的硅膜。 硅箔可用于形成诸如显示电路或太阳能电池的一系列半导体器件。
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