公开(公告)号：WO2010080789A2

公开(公告)日：2010-07-15

申请号：PCT/US2010020199

申请日：2010-01-06

Applicant: BREWER SCIENCE INC ,  LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

Abstract translation: 提供了新的双重和三重图案化方法。 所述方法包括将可收缩的组合物应用于图案化的模板结构（例如，具有线的结构）并加热组合物。 可收缩组合物被选择为具有使其在加热期间收缩的性质，从而在图案化模板结构上形成共形层。 然后蚀刻该层以留下预间隔结构，其包含来自图案的特征，其中可收缩组合物的残余物邻近特征侧壁。 功能被删除，留下了一倍的模式。 在替代实施例中，可以在模板结构上形成特征之前执行额外蚀刻步骤，从而允许图案增加三倍而不是加倍。

公开(公告)号：WO2005038878A3

公开(公告)日：2005-04-28

申请号：PCT/US2004/034495

申请日：2004-10-15

Applicant: BREWER SCIENCE INC. ,  BHAVE, Mandar ,  WASHBURN, Carlton, A. ,  PULIGADDA, Rama ,  EDWARDS, Kevin

Inventor： BHAVE, Mandar ,  WASHBURN, Carlton, A. ,  PULIGADDA, Rama ,  EDWARDS, Kevin

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/037 ,  G03F7/11 ,  G03F7/26 ,  G03F7/30 ,  G03F7/40 ,  H01L21/31 ,  H01L21/311

Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the rescessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particular suitable for use at exposure wavelengths of less than about 370 nm.

公开(公告)号：WO2012057893A3

公开(公告)日：2012-07-12

申请号：PCT/US2011046751

申请日：2011-08-05

Applicant: BREWER SCIENCE INC ,  PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

IPC: H01L21/20

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供了临时连接半导体衬底的多个键合层方案。 在本发明的键合方案中，至少一个层直接与半导体衬底接触，并且该方案内的至少两个层彼此直接接触。 当多层结构内的不同层执行特定功能时，本发明提供了多种处理选项。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装在晶片的正面上保护凸块，在剥离步骤中的更低的应力以及更少的数量来提高薄晶片处理解决方案的性能 正面缺陷。

公开(公告)号：WO2010051212A3

公开(公告)日：2010-05-06

申请号：PCT/US2009/061633

申请日：2009-10-22

Applicant: BREWER SCIENCE INC. ,  HONG, Wenbin ,  BAI, Dongshun ,  FLAIM, Tony, D. ,  PULIGADDA, Rama

Inventor： HONG, Wenbin ,  BAI, Dongshun ,  FLAIM, Tony, D. ,  PULIGADDA, Rama

IPC: H01L21/302 ,  H01L21/304

Abstract: New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process.

公开(公告)号：WO2012057893A2

公开(公告)日：2012-05-03

申请号：PCT/US2011/046751

申请日：2011-08-05

Applicant: BREWER SCIENCE INC. ,  PULIGADDA, Rama ,  ZHONG, Xing-Fu ,  FLAIM, Tony, D. ,  MCCUTCHEON, Jeremy

Inventor： PULIGADDA, Rama ,  ZHONG, Xing-Fu ,  FLAIM, Tony, D. ,  MCCUTCHEON, Jeremy

IPC: H01L21/20

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：WO2010080789A3

公开(公告)日：2010-07-15

申请号：PCT/US2010/020199

申请日：2010-01-06

Applicant: BREWER SCIENCE INC. ,  LIN, Qin ,  PULIGADDA, Rama ,  CLAYPOOL, James ,  GUERRERO, Douglas, J. ,  SMITH, Brian

Inventor： LIN, Qin ,  PULIGADDA, Rama ,  CLAYPOOL, James ,  GUERRERO, Douglas, J. ,  SMITH, Brian

IPC: H01L21/027 ,  G03F7/20

Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

公开(公告)号：WO2010051212A2

公开(公告)日：2010-05-06

申请号：PCT/US2009061633

申请日：2009-10-22

Applicant: BREWER SCIENCE INC ,  HONG WENBIN ,  BAI DONGSHUN ,  FLAIM TONY D ,  PULIGADDA RAMA

Inventor： HONG WENBIN ,  BAI DONGSHUN ,  FLAIM TONY D ,  PULIGADDA RAMA

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/187 ,  C08G2261/332 ,  C08G2261/418 ,  C08L65/00 ,  C09J123/0823 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/10 ,  Y10T156/1153 ,  Y10T428/24355 ,  Y10T428/24802

Abstract: New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process.

Abstract translation: 提供了使用这些组合物作为粘合组合物的新组合物和方法。 所述组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可用于将活性晶片结合到载体晶片或衬底上，以辅助在后续处理和处理期间保护活性晶片及其活性部位。 该组合物形成化学和耐热的粘合层，但也可以软化或溶解以允许晶片在制造过程中的适当阶段滑动或拉开。