Abstract:
A method of packaging a semiconductor die. The method comprises mounting a semiconductor die to a die attach pad on a carrier and electrically coupling an electrode of the semiconductor die and a contact pad on the carrier with a clip carried by a sacrificial substrate. The method further comprises removing the sacrificial substrate to release the clip. The method may be extended to accommodate a carrier having multiple device regions each with a die attach pad and a contact pad for mounting multiple semiconductor die.
Abstract:
A die package (72) for a semiconductor die (20). A plurality of the die packages (72) are formed on a single carrier (10) by applying a body (55) of molding compound across a carrier (10) with an air cavity (70) defined in the molding compound about each of a plurality of device regions (12) of the carrier (10). After a semiconductor die (20) is attached inside the air cavity (70) of each device region (12) and electrically connected with at least one contact pad (14, 16, 18), a cover (68) is applied to close all of the air cavities (70). Following singulation, each semiconductor die (20) is located inside the sealed air cavity (70) of one die package (72). The molding compound of each die package (72) may be locked against movement relative to the device region (12) of the carrier (10) by locking features (30, 38, 48, 50). The locking features (30, 38, 48, 50) may constitute portions of contact pads (14, 16, 18) used to establish electrical communication paths from the semiconductor die (20) to the environment outside of the package (72).
Abstract:
An inorganic solder mask (48) for use as a surface treatment in masking a connection conductor (32) of a semi-conductor chip package (10) against solder wetting when mounting the chip package (10) to a printed wiring board (50) or other substrate. The connection conductor (32) is partially covered by a metallization contact (42) formed from a distinct metal. The inorganic solder mask (46) is applied to an exposed portion (44) of the connection conductor (32) not covered by the metallization contact (42). The metallization contact (42) is not coated by the inorganic solder mask (46). The presence of the inorganic solder mask (46) significantly reduces or prevents wetting of the exposed portion (44) when molten solder is present on the connection conductor (32) without affecting the solidified solder layer (48) formed on the metallization contact (42). As a result, an extraneous mass of solder does not solidify on the exposed portion (44) of the connection conductor (32).
Abstract:
An improved method of etching a structure and a structure etched by the method is disclosed. The bottom side of a leadframe of an IC-package is an example of a structure, which advantageously may be etched with the disclosed method. The method includes the steps of providing an etch mask to the substrate to be etched. The etch mask comprising at least two sub-mask: a first sub-mask covering the area which substantially should remain after the etching process, and a second sub-mask covering an area to be removed in the etching process. The second sub-mask is a sacrificial mask in the form of a grid. The presence of the second sub-mask increases the etching speed in the area covered by it.
Abstract:
A method of packaging a semiconductor die (20). The method comprises mounting a semiconductor die (20) to a die attach pad (34) on a carrier (10) and electrically coupling an electrode (36) of the semiconductor die (20) and a contact pad (16) on the carrier (10) with a clip (54) carried by a sacrificial substrate (58). The method further comprises removing the sacrificial substrate (58) to release the clip (54). The method may be extended to accommodate a carrier (10) having multiple device regions (12, 13) each with a die attach pad (34) and a contact pad (16) for mounting multiple semiconductor die (20).
Abstract:
The device has a carrier and an electric element. The carrier has a first and an opposed side and is provided with an connection layer, an intermediate layer and contact pads. The element is present at the first side and coupled to the connection layer. It is at least partially encapsulated by an encapsulation that extends into isolation areas between patterns in the intermediate layer. A protective layer is present at the second side of the carrier, which covers an interface between the contact pads and the intermediate layer.
Abstract:
Disclosed is a discrete semiconductor device package (100) comprising a leadframe portion (10) comprising a recess (14) having a depth substantially equal to the thickness of the discrete semiconductor device (20), wherein a raised portion of the leadframe portion adjacent to said recess defines a first contact area (12); a discrete semiconductor device (20) in said recess, wherein the exposed surface (22) of the discrete semiconductor device defines a second contact area; a protective layer (30) covering the leadframe portion and the a discrete semiconductor device but not the first contact area and the second contact area; and respective plating layers (40) covering the first contact area and the second contact area. A method of manufacturing such a package and a carrier comprising such a package are also disclosed.
Abstract:
An inorganic solder mask (48) for use as a surface treatment in masking a connection conductor (32) of a semiconductor chip package (10) against solder wetting when mounting the chip package (10) to a printed wiring board (50) or other substrate. The connection conductor (32) is partially covered by a metallization contact (42) formed from a distinct metal. The inorganic solder mask (46) is applied to an exposed portion (44) of the connection conductor (32) not covered by the metallization contact (42). The metallization contact (42) is not coated by the inorganic solder mask (46). The presence of the inorganic solder mask (46) significantly reduces or prevents wetting of the exposed portion (44) when molten solder is present on the connection conductor (32) without affecting the solidified solder layer (48) formed on the metallization contact (42). As a result, an extraneous mass of solder does not solidify on the exposed portion (44) of the connection conductor (32).
Abstract:
A carrier (100) for bonding a semiconductor chip (114) onto is provided, wherein the carrier (100) comprises a die pad (101) and a plurality of contact pads (102), wherein each of the plurality of contact pads (102) comprises an electrically conductive multilayer stack, wherein the electrically conductive multilayer stack comprises a surface layer (109), a first buffer layer, and a first conductive layer (108). Furthermore, the first buffer layer comprises a material adapted to prevent diffusion of material of the surface layer (109) into the first conductive layer (108), and at least two of the contact pads (102) has an ultrafine pitch relative to each other.
Abstract:
The device has a carrier and an electric element. The carrier has a first and an opposed side and is provided with an connection layer, an intermediate layer and contact pads. The element is present at the first side and coupled to the connection layer. It is at least partially encapsulated by an encapsulation that extends into isolation areas between patterns in the intermediate layer. A protective layer is present at the second side of the carrier, which covers an interface between the contact pads and the intermediate layer.