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    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    1.
    发明申请
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 审中-公开
    腐蚀氧化硅层的方法

    公开(公告)号：WO2008015434A1

    公开(公告)日：2008-02-07

    申请号：PCT/GB2007/002932

    申请日：2007-08-02

    Applicant: POINT 35 MICROSTRUCTURES LIMITED ,  O'HARA, Anthony

    Inventor： O'HARA, Anthony

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

    Abstract translation: 描述了释放包括位于衬底层和要从氧化硅层释放的层之间的氧化硅层的微结构的控制方法。 该方法包括在具有受控温度和压力条件的处理室中将氧化硅层暴露于氟化氢蒸汽的步骤。 该反应的副产物是还用作蚀刻工艺的催化剂的水。 控制这种固有水源的使用，导致仅在氧化物层的暴露表面上形成冷凝的流体层，并且因此进行蚀刻。 因此，所描述的方法降低了在微结构和处理室本身内的蚀刻微结构内的毛细管诱导静电和/或腐蚀的影响的风险。

    IMPROVED METHOD AND APPARATUS FOR MONITORING A MICROSTRUCTURE ETCHING PROCESS
    2.
    发明申请
    IMPROVED METHOD AND APPARATUS FOR MONITORING A MICROSTRUCTURE ETCHING PROCESS 审中-公开
    用于监测微结构蚀刻过程的改进方法和装置

    公开(公告)号：WO2006077390A1

    公开(公告)日：2006-07-27

    申请号：PCT/GB2006/000140

    申请日：2006-01-17

    Applicant: POINT 35 MICROSTRUCTURES LIMITED ,  O'HARA, Anthony ,  LEAVY, Michael ,  PRINGLE, Graeme

    Inventor： O'HARA, Anthony ,  LEAVY, Michael ,  PRINGLE, Graeme

    IPC: H01J37/32 ,  C23F4/02 ,  H01L21/32

    CPC classification number: H01J37/32935 ,  B81C1/00476 ,  B81C99/0065 ,  B81C2201/0138

    Abstract: An etching monitoring apparatus (1) and related method for use in the manufacture of microstructures (2) (and in particular MEMS) located within an etching chamber (3) is described. The apparatus (1) and related method operates by setting the temperature of the chamber (3) within which the microstructure (2) is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber (3) at a constant value. As a result the surface temperature o f the microstructure (2) within the chamber (3) is primarily determined by the etch rate. Therefore, by employing a thermometer (8) to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.

    Abstract translation: 描述了一种用于制造位于蚀刻室（3）内的微结构（2）（特别是MEMS）的蚀刻监测装置（1）和相关方法。 设备（1）和相关方法通过将微结构（2）所在的室（3）的温度设定在起始温度并将室内（3）内的蚀刻气体的分压维持在 恒定值。 结果，室（3）内的微结构（2）的表面温度主要由蚀刻速率决定。 因此，通过使用温度计（8）来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。

    IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES
    3.
    发明申请
    IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
    用于微结构蚀刻的改进方法和装置

    公开(公告)号：WO2005124827A2

    公开(公告)日：2005-12-29

    申请号：PCT/GB2005/002386

    申请日：2005-06-17

    Applicant: POINT 35 MICROSTRUCTURES LIMITED ,  O'HARA, Anthony ,  LEAVY, Michael ,  PRINGLE, Graeme ,  McKIE, Anthony

    Inventor： O'HARA, Anthony ,  LEAVY, Michael ,  PRINGLE, Graeme ,  McKIE, Anthony

    IPC: H01L21/00

    CPC classification number: H01L21/67069 ,  B01D7/00 ,  C23F1/00 ,  C23F1/12 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017

    Abstract: An apparatus and method for providing an etching gas source for etching one or more microstructures located within a process chamber. The apparatus has a gas source supply line attached to a gas source and one or more chambers for containing an etching material. In use, the etching material is transformed into an etching material vapour within one or more of the chambers and the gas supply line provides a supply of carrier gas to the etching material vapour and also supplies the etching material vapour transported by the carrier gas to the process chamber. Advantageously, the apparatus of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.

    Abstract translation: 一种用于提供用于蚀刻位于处理室内的一个或多个微结构的蚀刻气体源的装置和方法。 该装置具有附接到气体源的气体源供应管线和用于容纳蚀刻材料的一个或多个室。 在使用中，蚀刻材料被转化成一个或多个室内的蚀刻材料蒸气，并且气体供应管线为蚀刻材料蒸气提供载气，并且还将由载气输送的蚀刻材料蒸气供给到 处理室。 有利地，本发明的装置不需要引入任何膨胀室或其它复杂的机械特征，以实现连续的蚀刻气体流。

    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    4.
    发明公开
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 有权
    方法用于蚀刻氧化硅的受害者层

    公开(公告)号：EP2046677A1

    公开(公告)日：2009-04-15

    申请号：EP07789096.0

    申请日：2007-08-02

    Applicant: Point 35 Microstructures Limited

    Inventor： O'HARA, Anthony

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

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