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    VOLTAGE SWITCHABLE DIELECTRIC FOR DIE-LEVEL ELECTROSTATIC DISCHARGE (ESD) PROTECTION
    4.
    发明申请
    VOLTAGE SWITCHABLE DIELECTRIC FOR DIE-LEVEL ELECTROSTATIC DISCHARGE (ESD) PROTECTION 审中-公开

    公开(公告)号：WO2012135832A3

    公开(公告)日：2012-10-04

    申请号：PCT/US2012/031861

    申请日：2012-04-02

    Applicant: QUALCOMM INCORPORATED ,  GU, Shiqun ,  RADOJCIC, Ratibor ,  LI, Yiming

    Inventor： GU, Shiqun ,  RADOJCIC, Ratibor ,  LI, Yiming

    IPC: H01L23/60 ,  H01L23/29 ,  H01L23/62 ,  H01L23/525

    Abstract: A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the terminals switches the voltage-switchable dielectric layer into a conducting layer to allow current to discharge to a ground terminal of the die without the current passing through circuitry of the die. Thus, damage to the circuitry of the die is reduced or prevented during ESD events on dies with the voltage-switchable dielectric layer. The voltage-switchable dielectric layer may be deposited on the back side of a die for protection during stacking with a second die to form a stacked IC.

    VOLTAGE SWITCHABLE DIELECTRIC FOR DIE-LEVEL ELECTROSTATIC DISCHARGE (ESD) PROTECTION
    6.
    发明申请
    VOLTAGE SWITCHABLE DIELECTRIC FOR DIE-LEVEL ELECTROSTATIC DISCHARGE (ESD) PROTECTION 审中-公开
    用于模块级静电放电（ESD）保护的电压可切换介质

    公开(公告)号：WO2012135832A2

    公开(公告)日：2012-10-04

    申请号：PCT/US2012031861

    申请日：2012-04-02

    Applicant: QUALCOMM INC ,  GU SHIQUN ,  RADOJCIC RATIBOR ,  LI YIMING

    Inventor： GU SHIQUN ,  RADOJCIC RATIBOR ,  LI YIMING

    IPC: H01L23/60

    CPC classification number: H01L23/62 ,  H01L23/29 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

    Abstract: A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the terminals switches the voltage-switchable dielectric layer into a conducting layer to allow current to discharge to a ground terminal of the die without the current passing through circuitry of the die. Thus, damage to the circuitry of the die is reduced or prevented during ESD events on dies with the voltage-switchable dielectric layer. The voltage-switchable dielectric layer may be deposited on the back side of a die for protection during stacking with a second die to form a stacked IC.

    Abstract translation: 可以在用于静电放电（ESD）保护的管芯上采用电压可切换介电层。 在模具的正常操作期间，电压可切换介电层用作裸片的端子之间的介电层。 当ESD事件发生在管芯的端子处时，端子之间的高电压将电压可切换介电层切换为导电层，以允许电流放电至管芯的接地端子，而电流不通过管芯的电路。 因此，在具有电压可切换电介质层的管芯上的ESD事件期间，减小或防止了管芯电路的损坏。 可以在用第二管芯堆叠期间将电压可切换介电层沉积在管芯的背侧以用于保护以形成堆叠式IC。

    HYBRID PACKAGE CONSTRUCTION WITH WIRE BOND AND THROUGH SILICON VIAS
    7.
    发明申请
    HYBRID PACKAGE CONSTRUCTION WITH WIRE BOND AND THROUGH SILICON VIAS 审中-公开

    公开(公告)号：WO2011063166A3

    公开(公告)日：2011-05-26

    申请号：PCT/US2010/057305

    申请日：2010-11-18

    Applicant: QUALCOMM INCORPORATED ,  RADOJCIC, Ratibor ,  CHANDRASEKARAN, Arvind ,  LANE, Ryan

    Inventor： RADOJCIC, Ratibor ,  CHANDRASEKARAN, Arvind ,  LANE, Ryan

    IPC: H01L25/065

    Abstract: A hybrid interconnect includes a through silicon via and a wire bond. Hybrid interconnects enable better layout of a stacked IC by combining benefits from both interconnect technologies. In one hybrid interconnect, wire bonds couples a second tier die mounted on a first tier die to a redistribution layer in the first tier die. Through silicon vias in the first tier die are coupled to the wire bonds to provide communication. In another hybrid interconnect, a wire bond couples a redistribution layer on a first tier die to a packaging substrate on which the first tier die is mounted. The redistribution layer couples to a second tier die mounted on the first tier die to provide a power supply to the second tier die. Through silicon vias in the first tier die couple to the second tier die to provide communication from the packaging substrate to the second tier die.

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