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    METHOD OF DETERMINING STOPPING POWERS OF DESIGN STRUCTURES WITH RESPECT TO A TRAVELING PARTICLE
    2.
    发明申请
    METHOD OF DETERMINING STOPPING POWERS OF DESIGN STRUCTURES WITH RESPECT TO A TRAVELING PARTICLE 审中-公开
    确定设计结构与行程粒子停止功率的方法

    公开(公告)号：WO2008082938A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007087766

    申请日：2007-12-17

    Applicant: IBM ,  FIORENZA GIOVANNI ,  MURRAY CONAL E ,  RODBELL KENNETH P ,  TANG HENRY

    Inventor： FIORENZA GIOVANNI ,  MURRAY CONAL E ,  RODBELL KENNETH P ,  TANG HENRY

    IPC: G06F17/50 ,  G06F7/62 ,  G06F19/00

    CPC classification number: G06F17/5009 ,  G06F2217/16

    Abstract: A method of determining a stopping power of a design structure with respect to a traveling particle. The method includes (i) providing design information of the design structure comprising a back-end-of-line layer which includes N interconnect layers, N being a positive integer, (ii) dividing each interconnect layer of the N interconnect layers into multiple pixels, and (iii) determining a first path of the traveling particle in a first interconnect layer of the N interconnect layers, (iv) identifying M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle, M being a positive integer, and (v) determining a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels.

    Abstract translation: 确定设计结构相对于行进粒子的停止能力的方法。 该方法包括（i）提供设计结构的设计信息，该设计结构包括包含N个互连层的后端行层，N是正整数，（ii）将N个互连层中的每个互连层分成多个像素 （iii）确定N个互连层中的第一互连层中的行进粒子的第一路径，（iv）识别在行进粒子的第一路径上的第一互连层的多个像素的M个路径像素，M （v）确定由于其完全穿过M个路径像素的第一像素而由行进粒子损失的第一损失能量。

    GROOVED POLISHING PADS AND METHODS OF USE
    3.
    发明申请
    GROOVED POLISHING PADS AND METHODS OF USE 审中-公开
    沟槽抛光垫和使用方法

    公开(公告)号：WO0202279A2

    公开(公告)日：2002-01-10

    申请号：PCT/US0120904

    申请日：2001-06-29

    Applicant: IBM ,  CHEN SHYNG TSONG ,  DAVIS KENNETH M ,  RODBELL KENNETH P

    Inventor： CHEN SHYNG-TSONG ,  DAVIS KENNETH M ,  RODBELL KENNETH P

    IPC: B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  B24D18/00 ,  H01L21/304 ,  B24B37/04

    CPC classification number: B24B37/26 ,  B24D18/00

    Abstract: Grooves are formed in a CMP (12) pad by positioning the pad on a supporting surface with a working surface (22) of the pad in spaced relation opposite to a router bit (24) and at least one projecting stop member (33) adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves. Grooves in the polishing surface may be provided with outlets through which a polishing slurry may flow while the polishing surface is in contact with a workpiece surface.

    Abstract translation: 通过将衬垫定位在支撑表面上，通过衬垫的工作表面（22）以与router刨机钻头（24）和至少一个相邻的突出的止动构件（33）相对的间隔关系相反的方式在CMP（12） 到router刨机钻头，钻头的外端部分突出到挡块之外。 当钻头旋转时，钻头和垫之间的相对轴向移动导致钻头的外端部分切割垫中的初始凹陷。 旋转钻头和垫之间的相对横向运动然后形成凹槽，该凹槽横向地远离凹槽延伸并且具有与凹槽基本相同的深度。 钻头和垫之间的不同横向运动用于形成各种凹槽图案，其深度由止挡构件精确控制。 凹槽可以形成在抛光表面和/或抛光垫的后部相对表面中，并且通道可以设置用于将后部凹槽与抛光表面或前部凹槽互连。 抛光表面中的凹槽可以设置有出口，在抛光表面与工件表面接触的同时抛光浆料可以流过出口。

    METHOD OF DETERMINING STOPPING POWERS OF DESIGN STRUCTURES WITH RESPECT TO A TRAVELING PARTICLE
    4.
    发明申请
    METHOD OF DETERMINING STOPPING POWERS OF DESIGN STRUCTURES WITH RESPECT TO A TRAVELING PARTICLE 审中-公开
    确定设计结构的停留力与移动颗粒相关的方法

    公开(公告)号：WO2008082938A2

    公开(公告)日：2008-07-10

    申请号：PCT/US2007/087766

    申请日：2007-12-17

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  FIORENZA, Giovanni ,  MURRAY, Conal, E. ,  RODBELL, Kenneth, P. ,  TANG, Henry

    Inventor： FIORENZA, Giovanni ,  MURRAY, Conal, E. ,  RODBELL, Kenneth, P. ,  TANG, Henry

    IPC: G06F17/50

    CPC classification number: G06F17/5009 ,  G06F2217/16

    Abstract: A method of determining a stopping power of a design structure with respect to a traveling particle. The method includes (i) providing design information of the design structure comprising a back-end-of-line layer which includes N interconnect layers, N being a positive integer, (ii) dividing each interconnect layer of the N interconnect layers into multiple pixels, and (iii) determining a first path of the traveling particle in a first interconnect layer of the N interconnect layers, (iv) identifying M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle, M being a positive integer, and (v) determining a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels.

    Abstract translation: 确定设计结构相对于行进颗粒的停止力的方法。 该方法包括（i）提供设计结构的设计信息，该设计结构包括后端行层，其包括N个互连层，N为正整数，（ii）将N个互连层的每个互连层划分成多个像素 ，和（iii）确定所述N个互连层的第一互连层中的所述行进粒子的第一路径，（iv）识别所述行进粒子的所述第一路径上的所述第一互连层的所述多个像素的M个路径像素，M 作为正整数，以及（v）确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。

    METHOD AND STRUCTURE FOR REDUCTION OF SOFT ERROR RATES IN INTEGRATED CIRCUITS
    8.
    发明申请
    METHOD AND STRUCTURE FOR REDUCTION OF SOFT ERROR RATES IN INTEGRATED CIRCUITS 审中-公开

    公开(公告)号：WO2007011438A3

    公开(公告)日：2007-01-25

    申请号：PCT/US2006/013173

    申请日：2006-04-07

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CABRAL, Cyril, Jr. ,  GORDON, Michael, S. ,  RODBELL, Kenneth, P.

    Inventor： CABRAL, Cyril, Jr. ,  GORDON, Michael, S. ,  RODBELL, Kenneth, P.

    IPC: H01L21/44

    Abstract: A structure and a method for reduction of soft error rates in integrated circuits. The structure including: a semiconductor substrate; and a stack of one or more wiring levels stacked from a lowermost wiring level to an uppermost wiring level, the lowermost wiring level nearer the semiconductor substrate than the uppermost wiring level; and an alpha particle blocking layer on a top surface of the uppermost wiring level of the one or more wiring levels, the blocking layer comprising metal wires and a dielectric material, the blocking layer having a combination of a thickness of the blocking layer and a volume percent of metal wires in the blocking layer sufficient to stop a predetermined percentage of alpha particles of a selected energy or less striking the blocking layer from penetrating into the stack of one or more wiring levels or the substrate.

    HOMOGENEOUS COPPER INTERCONNECTS FOR BEOL
    9.
    发明申请
    HOMOGENEOUS COPPER INTERCONNECTS FOR BEOL 审中-公开
    用于BEOL的均质铜互连

    公开(公告)号：WO2006039138A1

    公开(公告)日：2006-04-13

    申请号：PCT/US2005/033539

    申请日：2005-09-20

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  PETRARCA, Kevin, S. ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael ,  RODBELL, Kenneth, P.

    Inventor： PETRARCA, Kevin, S. ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael ,  RODBELL, Kenneth, P.

    IPC: H01L21/31

    CPC classification number: H01L21/76873 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

    Abstract: Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer (440). The impure copper seed layer (440) covers a barrier layer (230), which covers an insulating layer (115) that has an opening. Electroplated copper fills the opening in the insulating layer (115). Through a chemical mechanical polish, the barrier layer (230), the impure copper seed layer (440) derived from an electroplated copper bath, and the electroplated copper are planarized to the insulating layer (115).

    Abstract translation: 通过包括不纯铜籽晶层（440）的互连，减轻了用于线路半导体器件后端的铜互连边缘的缺陷。 不纯铜种子层（440）覆盖覆盖具有开口的绝缘层（115）的阻挡层（230）。 电镀铜填充绝缘层（115）中的开口。 通过化学机械抛光，阻挡层（230），源自电镀铜浴的不纯铜种子层（440）和电镀铜平坦化到绝缘层（115）。

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