公开(公告)号：WO2001061735A2

公开(公告)日：2001-08-23

申请号：PCT/DE2001000596

申请日：2001-02-15

Applicant: INFINEON TECHNOLOGIES AG ,  LEHMANN, Volker ,  RUEB, Michael ,  TIHANYI, Jenoe

Inventor： INFINEON TECHNOLOGIES AG

IPC: H01L21/266

CPC classification number: H01L29/0634 ,  H01L21/266

Abstract: The invention relates to a re-usable implantation mask (5), preferably made of silicon, comprising specially structured trenches and holes(2 or 3), which is provided directly or at a distance from a device wafer (7). The invention also relates to a method for adjusting a further processing plane on an implantation plane in a semiconductor wafer (7) fitted with one such implementation mask.

Abstract translation: 本发明涉及一种可重复使用的注入掩模（5）配有特定图案的沟槽和孔制成优选硅（2或3），其直接或在器件晶片（7），以及用于在注入电平调整一个进一步的处理面的方法的距离设置 一个具有这样的注入掩模的半导体晶片（7）处理。

公开(公告)号：WO2010075844A3

公开(公告)日：2010-08-19

申请号：PCT/DE2009001777

申请日：2009-12-16

Applicant: BROSE FAHRZEUGTEILE ,  STOEHLING MARCO ,  BAUER KARL-HEINZ ,  RUEB MICHAEL ,  WITTSTADT FRANK ,  DILLER HANNELORE ,  TIEMEYER PETER

Inventor： STOEHLING MARCO ,  BAUER KARL-HEINZ ,  RUEB MICHAEL ,  WITTSTADT FRANK ,  DILLER HANNELORE ,  TIEMEYER PETER

IPC: H02K5/24

CPC classification number: H02K5/24 ,  Y10S277/916

Abstract: In an electro-motor drive, in particular for a fan drive of a motor vehicle, comprising a commutator motor (1), the motor shaft (4) of which is rotatably mounted on axially opposing sides (BS, AS) in shaft bearings (9, 10) covered by means of a bearing shield (7, 8), a damping system (14) is arranged on the bearing side of the or each shaft bearing (9, 10) facing away from the bearing shield (7, 8) in order to dampen the sound, in particular of bearing play-related contact noise and vibration or humming noise.

Abstract translation: 在电动马达的驱动，在机动车辆中的特定的风扇驱动器，具有一个换向器马达（1），其马达轴（4）上在每种情况下轴向相对侧（BS，AS）通过一个支承板的装置（7，8）所覆盖轴轴承（9，10）可旋转地 被安装时，为声音衰减，特别是轴承间隙引起在支承板冲击噪音和振动或啸声（7,8）的面向远离轴承的侧部或每个轴承（9,10），其布置的阻尼系统（14）。

公开(公告)号：WO0161735A3

公开(公告)日：2002-07-18

申请号：PCT/DE0100596

申请日：2001-02-15

Applicant: INFINEON TECHNOLOGIES AG ,  LEHMANN VOLKER ,  RUEB MICHAEL ,  TIHANYI JENOE

Inventor： LEHMANN VOLKER ,  RUEB MICHAEL ,  TIHANYI JENOE

IPC: H01L21/266 ,  H01L29/06 ,  H01L23/544

CPC classification number: H01L29/0634 ,  H01L21/266

Abstract: The invention relates to a re-usable implantation mask (5), preferably made of silicon, comprising specially structured trenches and holes(2 or 3), which is provided directly or at a distance from a device wafer (7). The invention also relates to a method for adjusting a further processing plane on an implantation plane in a semiconductor wafer (7) fitted with one such implementation mask.

Abstract translation: 本发明涉及一种可重复使用的注入掩模（5）配有特定图案的沟槽和孔制成优选硅（2或3），其直接或在器件晶片（7），以及用于在注入电平调整一个进一步的处理面的方法的距离设置 一个具有这样的注入掩模的半导体晶片（7）处理。

公开(公告)号：WO0017937A2

公开(公告)日：2000-03-30

申请号：PCT/DE9903081

申请日：1999-09-24

Applicant: SIEMENS AG ,  DEBOY GERALD ,  STRACK HELMUT ,  HAEBERLEN OLIVER ,  RUEB MICHAEL ,  FRIZA WOLFGANG

Inventor： DEBOY GERALD ,  STRACK HELMUT ,  HAEBERLEN OLIVER ,  RUEB MICHAEL ,  FRIZA WOLFGANG

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7802

Abstract: The invention relates to a method for producing a semiconductor component comprising semiconductor areas (4, 5) of different conductivity types which are alternately positioned in a semiconductor body and in said semiconductor body (1) extend at least from one first zone (6) to near a second zone (1) and by way of variable dopage from trenches (11, 14) and their fillings generate an electric field which increases from both said zones (6, 1).

Abstract translation: 本发明涉及一种半导体装置的制造与交替地布置在半导体本体中的半导体区域的方法（4,5）是在半导体本体延伸的交替不同的导电类型（1）的至少一个第一区域（6）的附近到第二区（1 ）通过挖沟（11的可变掺杂延伸，14）和它们的填充产生电场，这两个区域中的一个（6,1）具有从上升轮廓。