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公开(公告)号：WO1995012134A1
公开(公告)日：1995-05-04
申请号：PCT/FI1994000487
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY , KAHILAINEN, Jukka
Inventor： RADOS TECHNOLOGY OY
IPC: G01T01/24
CPC classification number: H01L31/119 , G01T1/026 , G01T1/26
Abstract: A method for detecting ionizing radiation by allowing the radiation to affect the surface of the floating gate (13) of a MOSFET transistor (10) through an air or gas space. For this purpose, an uncovered area (17) is formed on the surface of the floating gate of the MOSFET transistor forming the detector. The MOSFET transistor is used so that a charge is formed on its floating gate, the charge changing as a result of the ionizing radiation the transistor is exposed to. The radiation dose is determined by the change which takes place in the charge on the gate.
Abstract translation: 一种通过允许辐射通过空气或气体空间影响MOSFET晶体管（10）的浮动栅极（13）的表面来检测电离辐射的方法。 为此，在形成检测器的MOSFET晶体管的浮置栅极的表面上形成未覆盖区域（17）。 使用MOSFET晶体管，使得其浮置栅极上形成电荷，电荷由于晶体管暴露于电离辐射而变化。 辐射剂量由在门上的电荷中发生的变化来确定。
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公开(公告)号：WO1997002609A1
公开(公告)日：1997-01-23
申请号：PCT/FI1996000380
申请日：1996-06-28
Applicant: RADOS TECHNOLOGY OY , OIKARI, Timo , KAHILAINEN, Jukka , HAASLAHTI, Jukka
Inventor： RADOS TECHNOLOGY OY
IPC: H01L31/113
CPC classification number: G01J1/42 , H01L31/1136
Abstract: A photodetector comprising a photoemissive surface capable of liberating photoelectrons. Photoelectrons are detected by a MOSFET having a floating gate, which is suitably charged before measurement in such a way that photoelectrons can cause a change in charge of the floating gate. The detected change indicates the amount of light received by the detector.
Abstract translation: 一种光电检测器，包括能够释放光电子的光发射表面。 光电子由具有浮置栅极的MOSFET检测，其在测量之前被适当地充电，使得光电子能够引起浮动栅极的电荷变化。 检测到的变化表示检测器接收到的光量。
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公开(公告)号：DE60027864D1
公开(公告)日：2006-06-14
申请号：DE60027864
申请日：2000-03-01
Applicant: HAMAMATSU PHOTONICS KK , RADOS TECHNOLOGY OY TURKU
Inventor： SUYAMA MOTOHIRO
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公开(公告)号：AT274241T
公开(公告)日：2004-09-15
申请号：AT96920861
申请日：1996-06-28
Applicant: RADOS TECHNOLOGY OY
Inventor： OIKARI TIMO , KAHILAINEN JUKKA , HAASLAHTI JUKKA
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/10 , H01L31/113 , H01L31/12
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公开(公告)号：FI953240A0
公开(公告)日：1995-06-30
申请号：FI953240
申请日：1995-06-30
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA , OIKARI TIMO , HAASLAHTI JUKKA
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/10 , H01L31/113 , H01J
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Patent Agency Ranking
公开(公告)号：FI110144B
公开(公告)日：2002-11-29
申请号：FI961789
申请日：1996-04-26
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
Abstract: Detecting ionising radiation comprises use of a dosimeter which incorporates a MOSFET transistor (10) provided with a floating gate (13).The ionizing radiation is allowed to affect the surface of the floating gate (13) of MOSFET transistor (10) through an open air or gas space or a closed air or gas space (24). For this purpose, an uncovered area (17) is formed on the surface of floating gate (13), or there is an area covered by a conductor, semiconductor or insulator. Also claimed is an ionising radiation detector/dosimeter comprising a MOSFET transistor (10) provided with a floating gate (13). A part of the surface of gate (13) is uncovered, or covered by a conductor, semiconductor or thin insulator. The floating gate surface is located in an open air or gas space or closed air or gas space.
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公开(公告)号：GR3030696T3
公开(公告)日：1999-11-30
申请号：GR990401778
申请日：1999-07-06
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：ES2132433T3
公开(公告)日：1999-08-16
申请号：ES94931057
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：AT178719T
公开(公告)日：1999-04-15
申请号：AT94931057
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：AU7995794A
公开(公告)日：1995-05-22
申请号：AU7995794
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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