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公开(公告)号：AT274241T
公开(公告)日：2004-09-15
申请号：AT96920861
申请日：1996-06-28
Applicant: RADOS TECHNOLOGY OY
Inventor： OIKARI TIMO , KAHILAINEN JUKKA , HAASLAHTI JUKKA
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/10 , H01L31/113 , H01L31/12
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公开(公告)号：FI953240A0
公开(公告)日：1995-06-30
申请号：FI953240
申请日：1995-06-30
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA , OIKARI TIMO , HAASLAHTI JUKKA
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/10 , H01L31/113 , H01J
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公开(公告)号：DE69633183D1
公开(公告)日：2004-09-23
申请号：DE69633183
申请日：1996-06-28
Applicant: RADOS TECHNOLOGY OY TURKU
Inventor： OIKARI TIMO , KAHILAINEN JUKKA , HAASLAHTI JUKKA
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/10 , H01L31/113 , H01L31/12
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公开(公告)号：FI961789A0
公开(公告)日：1996-04-26
申请号：FI961789
申请日：1996-04-26
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119 , G01T
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公开(公告)号：CA2175224A1
公开(公告)日：1995-05-04
申请号：CA2175224
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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Patent Agency Ranking
公开(公告)号：FI110144B
公开(公告)日：2002-11-29
申请号：FI961789
申请日：1996-04-26
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
Abstract: Detecting ionising radiation comprises use of a dosimeter which incorporates a MOSFET transistor (10) provided with a floating gate (13).The ionizing radiation is allowed to affect the surface of the floating gate (13) of MOSFET transistor (10) through an open air or gas space or a closed air or gas space (24). For this purpose, an uncovered area (17) is formed on the surface of floating gate (13), or there is an area covered by a conductor, semiconductor or insulator. Also claimed is an ionising radiation detector/dosimeter comprising a MOSFET transistor (10) provided with a floating gate (13). A part of the surface of gate (13) is uncovered, or covered by a conductor, semiconductor or thin insulator. The floating gate surface is located in an open air or gas space or closed air or gas space.
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公开(公告)号：GR3030696T3
公开(公告)日：1999-11-30
申请号：GR990401778
申请日：1999-07-06
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：ES2132433T3
公开(公告)日：1999-08-16
申请号：ES94931057
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：AT178719T
公开(公告)日：1999-04-15
申请号：AT94931057
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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公开(公告)号：AU7995794A
公开(公告)日：1995-05-22
申请号：AU7995794
申请日：1994-10-28
Applicant: RADOS TECHNOLOGY OY
Inventor： KAHILAINEN JUKKA
IPC: G01T1/02 , A61B6/00 , G01T20060101 , G01T1/24 , H01L27/14 , H01L31/09 , H01L31/10 , H01L31/119
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