公开(公告)号：WO2006012021A3

公开(公告)日：2006-09-28

申请号：PCT/US2005021202

申请日：2005-06-14

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

Inventor： SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

IPC: C23C16/00 ,  C23C16/505 ,  C23C16/52 ,  F25B29/00 ,  F28F27/00 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  F28D1/06 ,  F28D2021/0077 ,  F28F2013/006 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

Abstract: A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

Abstract translation: 对用于控制等离子体处理装置（300）的上部室（312）的温度的温度控制装置（308）进行说明。 温度控制装置包括导热体（334），其具有可拆卸地与等离子体处理装置的上室连接并与热连通的外表面和外表面。 温度控制装置还包括与导热体热连通的多个热界面层（344,348,350,352），其中至少一层是加热元件（350）; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件（326），其中所述冷却元件被配置为导入流体介质。 温度控制装置还包括用于感测上部室的温度的至少一个温度传感器，用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。

公开(公告)号：WO2008121289A1

公开(公告)日：2008-10-09

申请号：PCT/US2008/003971

申请日：2008-03-27

Applicant: LAM RESEARCH CORPORATION ,  KENWORTHY, Ian J. ,  FONG, Kelly W. ,  SHARPLESS, Leonard J.

Inventor： KENWORTHY, Ian J. ,  FONG, Kelly W. ,  SHARPLESS, Leonard J.

IPC: H01L21/306

CPC classification number: C23C16/4404 ,  B32B15/01 ,  C25D3/44 ,  C25D3/665 ,  C25D5/48 ,  C25D7/00 ,  C25D11/04 ,  C25D11/08 ,  Y10T428/12736 ,  Y10T428/12764 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.

Abstract translation: 公开了半导体材料加工装置的镀铝部件。 这些组件包括基材和形成在基材的至少一个表面上的任选的中间层。 中间层包括至少一个表面。 在基板上或可选的中间层上形成铝电镀。 形成铝电镀的表面是导电的。 可以可选地在铝电镀上形成阳极氧化层。 铝电镀或可选的阳极氧化层包括组件的工艺暴露表面。 还公开了包括一种或多种镀铝部件的半导体材料处理设备，基板的处理方法以及制造镀铝部件的方法。

公开(公告)号：WO2006011991A3

公开(公告)日：2006-08-24

申请号：PCT/US2005020968

申请日：2005-06-14

Applicant: LAM RES CORP ,  SHARPLESS LEONARD J ,  COMENDANT KEITH

Inventor： SHARPLESS LEONARD J ,  COMENDANT KEITH

IPC: H01L21/306 ,  C23C16/00 ,  C23C16/505

CPC classification number: H01J37/32522 ,  H01J37/321

Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece (250) including a chuck (216) configured for holding the substrate (224). The plasma processing system also includes an induction coil (231) configured to generate an electromagnetic field (242) in order to create a plasma (220) for processing the substrate; and an optimized top piece (244) coupled to the bottom piece, the top piece further configured for a heating and cooling system (246). Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

Abstract translation: 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件（250），其包括构造成用于保持衬底（224）的卡盘（216）。 等离子体处理系统还包括被配置为产生电磁场（242）的感应线圈（231），以便产生用于处理衬底的等离子体（220） 以及耦合到所述底部件的优化顶部件（244），所述顶部件还构造成用于加热和冷却系统（246）。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

公开(公告)号：WO2006011991A2

公开(公告)日：2006-02-02

申请号：PCT/US2005/020968

申请日：2005-06-14

Applicant: LAM RESEARCH CORPORATION ,  SHARPLESS, Leonard, J. ,  COMENDANT, Keith

Inventor： SHARPLESS, Leonard, J. ,  COMENDANT, Keith

IPC: C23C16/00

CPC classification number: H01J37/32522 ,  H01J37/321

Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

Abstract translation: 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化顶部件，所述顶部件还构造成用于加热和冷却系统。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

公开(公告)号：WO2006012021A2

公开(公告)日：2006-02-02

申请号：PCT/US2005/021202

申请日：2005-06-14

Applicant: LAM RESEARCH CORPORATION ,  SALDANA, Miguel, A. ,  SHARPLESS, Leonard, J. ,  DAUGHERTY, John, E.

Inventor： SALDANA, Miguel, A. ,  SHARPLESS, Leonard, J. ,  DAUGHERTY, John, E.

IPC: C23F1/00

CPC classification number: H01L21/67248 ,  F28D1/06 ,  F28D2021/0077 ,  F28F2013/006 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

Abstract: A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

Abstract translation: 描述了一种用于控制等离子体处理装置的上部室的温度的温度控制装置。 温度控制装置包括导热体，其具有可拆卸地与等离子体处理装置的上腔室连接并与热连通的内表面和外表面。 温度控制装置还包括与导热体热连通的多个热界面层，其中至少一层是加热元件; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件，其中所述冷却元件被配置为导入流体介质。 温度控制装置还包括至少一个温度传感器，用于感测等离子体处理装置的上腔室的温度; 用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。