公开(公告)号：WO2006078815A3

公开(公告)日：2006-07-27

申请号：PCT/US2006/001894

申请日：2006-01-18

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  RAO, Satyavolu, Srinivas, Papa ,  CRENSHAW, Darius, Lammont ,  GRUNOW, Stephan ,  BRENNAN, Kenneth, D. ,  JOSHI, Somit ,  LEAVY, Montray ,  MATZ, Phillip, D. ,  AJMERA, Sameer, Kumar ,  SOLOMENTSEV, Yuri, E.

Inventor： RAO, Satyavolu, Srinivas, Papa ,  CRENSHAW, Darius, Lammont ,  GRUNOW, Stephan ,  BRENNAN, Kenneth, D. ,  JOSHI, Somit ,  LEAVY, Montray ,  MATZ, Phillip, D. ,  AJMERA, Sameer, Kumar ,  SOLOMENTSEV, Yuri, E.

IPC: H01L21/20

Abstract: The formation of a MIM (metal insulator metal) capacitor (164) and concurrent formation of a resistor (166) is disclosed. A copper diffusion barrier is formed over a copper deposition (110) that serves as a bottom electrode (170) of the capacitor (164). The copper diffusion barrier mitigates unwanted diffusion of copper from the copper deposition (110), and is formed via electro-less deposition such that little to none of the barrier material is deposited at locations other than over a top surface of the deposition of copper/bottom electrode. Subsequently, layers of dielectric (150) and conductive (152) materials are applied to form a dielectric (172) and top electrode (174) of the MIM capacitor (164), respectively, where the layer of conductive top electrode material (152) also functions to concurrently develop the resistor (166) on the same chip as the capacitor (164).

公开(公告)号：WO2006078815A2

公开(公告)日：2006-07-27

申请号：PCT/US2006001894

申请日：2006-01-18

Applicant: TEXAS INSTRUMENTS INC ,  RAO SATYAVOLU SRINIVAS PAPA ,  CRENSHAW DARIUS LAMMONT ,  GRUNOW STEPHAN ,  BRENNAN KENNETH D ,  JOSHI SOMIT ,  LEAVY MONTRAY ,  MATZ PHILLIP D ,  AJMERA SAMEER KUMAR ,  SOLOMENTSEV YURI E

Inventor： RAO SATYAVOLU SRINIVAS PAPA ,  CRENSHAW DARIUS LAMMONT ,  GRUNOW STEPHAN ,  BRENNAN KENNETH D ,  JOSHI SOMIT ,  LEAVY MONTRAY ,  MATZ PHILLIP D ,  AJMERA SAMEER KUMAR ,  SOLOMENTSEV YURI E

IPC: H01L21/8242

CPC classification number: H01L21/76834 ,  H01L21/288 ,  H01L21/76816 ,  H01L21/76849 ,  H01L23/5223 ,  H01L28/20 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The formation of a MIM (metal insulator metal) capacitor (164) and concurrent formation of a resistor (166) is disclosed. A copper diffusion barrier is formed over a copper deposition (110) that serves as a bottom electrode (170) of the capacitor (164). The copper diffusion barrier mitigates unwanted diffusion of copper from the copper deposition (110), and is formed via electro-less deposition such that little to none of the barrier material is deposited at locations other than over a top surface of the deposition of copper/bottom electrode. Subsequently, layers of dielectric (150) and conductive (152) materials are applied to form a dielectric (172) and top electrode (174) of the MIM capacitor (164), respectively, where the layer of conductive top electrode material (152) also functions to concurrently develop the resistor (166) on the same chip as the capacitor (164).

Abstract translation: 公开了形成MIM（金属绝缘体金属）电容器（164）和同时形成电阻器（166）。 铜扩散阻挡层形成在充当电容器（164）的底部电极（170）的铜沉积物（110）上。 铜扩散阻挡层减轻铜从铜沉积物（110）中不需要的扩散，并且通过无电沉积形成，使得阻挡材料很少或不是在除了铜/ 底部电极。 随后，分别施加电介质（150）和导电（152）材料层以形成MIM电容器（164）的电介质（172）和顶部电极（174），其中导电顶部电极材料层（152） 还用于在与电容器（164）相同的芯片上同时形成电阻器（166）。