公开(公告)号：WO2012166298A1

公开(公告)日：2012-12-06

申请号：PCT/US2012/036860

申请日：2012-05-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY ,  KHAYYAT, Maha M. ,  SOSA CORTES, Norma E. ,  SAENGER, Katherine L. ,  BEDELL, Stephen W. ,  SADANA, Devendra K.

Inventor： KHAYYAT, Maha M. ,  SOSA CORTES, Norma E. ,  SAENGER, Katherine L. ,  BEDELL, Stephen W. ,  SADANA, Devendra K.

IPC: H01L21/30

CPC classification number: H01L21/187

Abstract: Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.

Abstract translation: 方法：（i）对材料剥落过程引入额外的控制，从而改善裂纹的产生和传播，并提供（ii）提高选择性剥落深度的范围。 在一个实施例中，该方法包括在室温下的第一温度下在基底基板的表面上提供应力层。 接下来，包括应力层的基底衬底达到小于室温的第二温度。 基底基板在第二温度下剥离以形成剥离的材料层。 此后，剥离的材料层返回到室温，即第一温度。

公开(公告)号：WO2011106204A3

公开(公告)日：2011-09-01

申请号：PCT/US2011/024949

申请日：2011-02-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BEDELL, Stephen, W. ,  FOGEL, Keith, E. ,  SOSA CORTES, Norma, E ,  SADANA, Devendra ,  SHAHRJERDI, Davood ,  WACASER, Brent, A

Inventor： BEDELL, Stephen, W. ,  FOGEL, Keith, E. ,  SOSA CORTES, Norma, E ,  SADANA, Devendra ,  SHAHRJERDI, Davood ,  WACASER, Brent, A

IPC: H01L31/042 ,  H01L31/06

Abstract: A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single-junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.

Abstract translation: 用于形成单结光伏电池的方法包括：在半导体衬底的表面上形成掺杂剂层; 将掺杂剂层扩散到半导体衬底中以形成半导体衬底的掺杂层; 在所述掺杂层上形成金属层，其中所述金属层中的拉伸应力被配置为在所述半导体衬底中引起断裂; 在断裂处从半导体衬底去除半导体层; 以及使用半导体层形成单结光伏电池。 单结光伏电池包括：掺杂层，其包括扩散到半导体衬底中的掺杂剂; 形成在掺杂层上的图案化导电层; 包括半导体衬底的半导体层，所述半导体衬底位于所述掺杂层的与所述图案化导电层相对的表面上的所述掺杂层上; 和在半导体层上形成的欧姆接触层。

公开(公告)号：WO2011106204A2

公开(公告)日：2011-09-01

申请号：PCT/US2011024949

申请日：2011-02-16

Applicant: IBM ,  BEDELL STEPHEN W ,  FOGEL KEITH E ,  SOSA CORTES NORMA E ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD ,  WACASER BRENT A

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  SOSA CORTES NORMA E ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD ,  WACASER BRENT A

IPC: H01L31/042 ,  H01L31/06

CPC classification number: H01L31/0304 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/075 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/548

Abstract: A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single-junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.

Abstract translation: 一种形成单结光伏电池的方法包括在半导体衬底的表面上形成掺杂剂层; 将掺杂剂层扩散到半导体衬底中以形成半导体衬底的掺杂层; 在所述掺杂层上形成金属层，其中所述金属层中的拉伸应力构造成在所述半导体衬底中引起断裂; 在断裂时从半导体衬底去除半导体层; 以及使用半导体层形成单结光伏电池。 单结光伏电池包括掺杂剂，该掺杂层包含扩散到半导体衬底中的掺杂剂; 形成在掺杂层上的图案化导电层; 半导体层，其包括位于掺杂层的与图案化导电层相对的表面上的掺杂层上的半导体衬底; 以及形成在半导体层上的欧姆接触层。