Abstract:
An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier. The epitaxial wafer comprises a Si substrate layer (11); an insulating layer (12) formed on the Si substrate layer (11); and a nitride semiconductor layer (13) formed on a surface of the insulating layer (12) facing away from the Si substrate layer (11); wherein the insulating layer (12) has a thickness configured such that under a forward bias voltage, the insulating layer (12) may allow electrons and holes to pass from one side to the other side of the insulating layer (12) via quantum tunneling so as to allow a forward current flow. Under reverse bias, the insulating layer (12) can hinder formation of free electrons and holes so as to block a reverse current. Thus, the epitaxial wafer is enabled to have the characteristic of allowing passage of a current only in one direction and can be made into a diode or the like for a current rectifying component.
Abstract:
A permeable optical fiber (100, 202, 304, 403, 701) for distributed gas sensing is described. The fiber (100, 202, 304, 403, 701) has got core (101, 502, 602) and cladding (102, 501, 601) structure. It can be arranged in a plurality of ways, but could have a permeable polymer cladding (102, 501, 601) to let the gas go inside the fiber (100, 202, 304, 403, 701) and a silica core (101, 502, 602) to guide light. The polymer cladding (102, 501, 601) is also designed to protect the fiber (100, 202, 304, 403, 701) from physical damage. In the optical fibers (100, 202, 304, 403, 701) some small part of light is distributed in the region of cladding (102, 501, 601), and the permeable cladding (102, 501, 601) makes the interaction between surrounding gas the guided light possible, and then the sensing of the gas surrounding the fiber (100, 202, 304, 403, 701) is realized by the laser absorption spectroscopy. The proposed sensing fiber (100, 202, 304, 403, 701) is preferentially used for long distance gas sensing system using a variety of arrangements, including the use of sections of the gas permeable fiber (100, 202, 304, 403, 701) as sensors located at various sites, and optically accessed through normal fiber transmission or by using the differential absorption lidar technique, there spatial concentrations along the same long fiber are measured by time-of-flight or phase shift techniques. Numerous gases can be monitored in connection with industrial, agricultural, mining operations, etc.
Abstract:
A distributed optical fiber gas sensing system (100) based on evanescent field sensing, spatially resolved along the fiber (105, 200, 300) and obtained by employing differential absorption lidar techniques is described. The fiber (105, 200, 300) can be arranged in a plurality of ways, and could have a porous cladding (202) sensing fiber (105, 200, 300) as the sensing unit. The sensing fiber (105, 200, 300) has a solid core (201) to guide light and a porous cladding (202) to protect the fiber (105, 200, 300) from physical damage and to enlarge the interface of the evanescent field and the test gas. A pulsed or modulated laser (103), a 3-dB optical coupler (104) and a photomultiplier tube (PMT) (107) form a typical OTDR sensing system. The pulse generator (102) is to control the pulse width, period, duty cycle of the pulsed laser (103). The data acquisition card (106) is to record the amplitude of the reflected light detected by the PMT (107). The controller (101) which usually is a computer is for signal recording and system synchronizing.
Abstract:
Super-transparent electrodes for photovoltaic applications are disclosed. In some embodiments, a photovoltaic cell (1) includes an absorber material (16) capable of absorbing solar energy and converting the absorbed energy into electrical current; a window electrode (10) disposed on a light-entry surface of the absorber material (16), the window electrode (10) comprising an anti-reflective coating (ARC) layer (12) and a metallic layer (13), and a rear electrode (18) disposed on a surface of the absorber material (16) in opposing relation to the window electrode (10), wherein the rear electrode (18) in combination with the window electrode (10) are configured to collect electrical current generated in the absorber material (16).
Abstract:
An oil puncture controlled starting system for an EFD apparatus and manufacturing method therefor, wherein the EFD display structure comprises a base arranged below a lower electrode, and the base is provided with a step, such that a first liquid has a first thickness outside the step and a second thickness on the step, which is less than the first thickness, such a thickness difference renders the first liquid on the step to be punctured by a second liquid firstly when a lower voltage is applied between a upper electrode and the lower electrode, and the first liquid is pushed by the second liquid to move from a first area to a second area.
Abstract:
The application provides a reflective display device and a color laminated display device, and relates to the technical field of display. The reflective display device according to the present application includes: a first electrode which is a transparent electrode; a second electrode arranged opposite to the first electrode; a display layer arranged between an inner side of the first electrode and an inner side of the second electrode; the display layer including a plurality of pixel walls which are arranged in the display layer at intervals; and an accommodating cavity formed by two adjacent pixel walls and the inner side of the second electrode, the accommodating cavity being used for accommodating two color developing liquids, and each of the pixel walls has a color identical to the color developing liquid. Due to the fact that the color displayed by the pixel walls is the same as that displayed by the reflective display device, the color of external light passing through the pixel walls becomes the same as that of the reflective display device, so that influences of stray light on contrast ratio, color gamut and visual angle color cast of the reflective display device can be eliminated, thereby improving the color gamut and the contrast ratio of the reflective display device.
Abstract:
A display structure having a paper effect. The display structure comprises panel glass (1), a display layer (2) and substrate glass (3), wherein a paper layer (4) is provided under the substrate glass, and the panel glass (1), the display layer (2), the substrate glass (3) and the paper layer (4) are stacked in sequence. Also provided are an electrowetting display structure based on the display structure and a method for manufacturing the display structure having a paper effect. A piece of high-quality paper is placed under a substrate of the existing display structure as a diffuse reflection layer or a diffuse reflector, so as to provide required diffuse reflection and contrast approximate to paper. Compared with vacuum coating, the process is simpler, and avoids the expensive vacuum coating process, thereby greatly reducing manufacturing costs.
Abstract:
Provided are a method for preparing an InGaN epitaxial layer on a Si substrate (12) and a silicon-based InGaN epitaxial layer prepared by employing the method. The preparation method comprises the following steps: 1) directly growing a first InGaN layer (11) on a Si substrate (12); and 2) growing a second InGaN layer on the first InGaN layer (11).
Abstract:
Provided is a nanowire array. Nanowires in the nanowire array closely adhere to each other and are in contact with each other through a side wall to form a three-dimensional dence layered structure, wherein the nanowires are of an InGaN-based material. Provided is an optoelectronic device having the nanowire array. The nanowire array is epitaxially grown on a surface of a substrate (12). Further provided is a method for manufacturing the nanowire array and the optoelectronic device.