公开(公告)号：WO2021042407A1

公开(公告)日：2021-03-11

申请号：PCT/CN2019/105398

申请日：2019-09-11

Applicant: SOUTH CHINA NORMAL UNIVERSITY

Inventor： NOTZEL, Richard ,  ZHOU, Guofu

IPC: H01L29/06 ,  H01L29/88 ,  H01L21/329 ,  H01L21/02 ,  B82Y40/00

Abstract: An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier. The epitaxial wafer comprises a Si substrate layer (11); an insulating layer (12) formed on the Si substrate layer (11); and a nitride semiconductor layer (13) formed on a surface of the insulating layer (12) facing away from the Si substrate layer (11); wherein the insulating layer (12) has a thickness configured such that under a forward bias voltage, the insulating layer (12) may allow electrons and holes to pass from one side to the other side of the insulating layer (12) via quantum tunneling so as to allow a forward current flow. Under reverse bias, the insulating layer (12) can hinder formation of free electrons and holes so as to block a reverse current. Thus, the epitaxial wafer is enabled to have the characteristic of allowing passage of a current only in one direction and can be made into a diode or the like for a current rectifying component.

公开(公告)号：EP3783639A1

公开(公告)日：2021-02-24

申请号：EP18943802.1

申请日：2018-12-19

Applicant: South China Normal University

Inventor： NOTZEL, Richard ,  WANG, Peng ,  ZHOU, Guofu ,  SANGUINETTI, Stefano

IPC: H01L21/02

Abstract: Provided are a method for preparing an InGaN epitaxial layer on a Si substrate (12) and a silicon-based InGaN epitaxial layer prepared by employing the method. The preparation method comprises the following steps: 1) directly growing a first InGaN layer (11) on a Si substrate (12); and 2) growing a second InGaN layer on the first InGaN layer (11).

公开(公告)号：EP3782955A1

公开(公告)日：2021-02-24

申请号：EP19906921.2

申请日：2019-01-11

Applicant: South China Normal University

Inventor： NOTZEL, Richard ,  WANG, Peng ,  ZHOU, Guofu ,  SANGUINETTI, Stefano

IPC: B82B1/00 ,  B82B3/00 ,  B82Y10/00

Abstract: Provided is a nanowire array. Nanowires in the nanowire array closely adhere to each other and are in contact with each other through a side wall to form a three-dimensional dence layered structure, wherein the nanowires are of an InGaN-based material. Provided is an optoelectronic device having the nanowire array. The nanowire array is epitaxially grown on a surface of a substrate (12). Further provided is a method for manufacturing the nanowire array and the optoelectronic device.