公开(公告)号：WO2006053358A1

公开(公告)日：2006-05-26

申请号：PCT/AT2005/000454

申请日：2005-11-15

Applicant: IMS NANOFABRICATION GMBH ,  STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

Inventor： STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

Abstract translation: 在粒子束装置的图案锁定系统中，其中通过投影系统的至少两个连续的投影台进行图案的成像，参考标记在登记装置上成像以确定粒子束的位置， 在由非最终投影仪舞台产生的参考标记的中间图像的位置处，其中登记装置位于中间成像平面的标称位置的位置。 此外，为了在登记装置上产生扫描运动，根据时间相关的电压，通过设置在图案定义装置中的偏转装置横向移动参考子束。

公开(公告)号：WO2006086815A2

公开(公告)日：2006-08-24

申请号：PCT/AT2006000060

申请日：2006-02-16

Applicant: IMS NANOFABRICATION GMBH ,  PLATZGUMMER ELMAR ,  CERNUSCA STEFAN ,  STENGL GERHARD

Inventor： PLATZGUMMER ELMAR ,  CERNUSCA STEFAN ,  STENGL GERHARD

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31788 ,  H01J2237/31793

Abstract: A particle-beam projection processing apparatus (100) for irradiating a target (41), with an illumination system (101) for forming a wide-area illuminating beam (Ip) of energetic electrically charged particles; a pattern definition means (102) for positioning an aperture pattern (21) in the path of the illuminating beam; and a projection system (103) for projecting the beam thus patterned (pb) onto a target (41) to be positioned after the projection system. A foil (34, 35) located across the path of the patterned beam (pb) is positioned between the pattern definition means (102) and the position of the target (41) at a location close to an image (i0) of the aperture pattern (21) formed by the projection system.

Abstract translation: 一种用于对目标物（41）照射用于形成能量带电粒子的广域照明光束（Ip）的照明系统（101）的粒子束投影处理装置（100） 用于将光圈图案（21）定位在照明光束的路径中的图案定义装置（102） 以及投影系统（103），用于将如此图案化的光束（pb）投影到目标（41）上以在投影系统之后定位。 位于图案化光束（pb）的路径上的箔片（34,35）位于图案定义装置（102）和目标（41）的靠近孔径图像（i0）的位置之间 图案（21）由投影系统形成。

公开(公告)号：WO2006053359A1

公开(公告)日：2006-05-26

申请号：PCT/AT2005/000455

申请日：2005-11-15

Applicant: IMS NANOFABRICATION GMBH ,  STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

Inventor： STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: In a pattern-lock system of particle-beam, apparatus reference marks are imaged upon registering means to determine the position of the particle-beam, with the registering means being positioned at locations of nominal positions of images of the reference marks. Exposure pauses are used for applying a lateral movement of the reference beamlets by means of the projecting system and the resulting varying signals from the image detection are used to determine a suitable operation point. Then, the lateral movement is stopped to obtain a stable image position for the duration of an exposure.

Abstract translation: 在粒子束的图案锁定系统中，设备参考标记在注册装置上成像以确定粒子束的位置，其中登记装置位于参考标记的图像的标称位置的位置。 曝光暂停用于通过投影系统施加参考子束的横向移动，并且使用来自图像检测的所得到的变化信号来确定合适的操作点。 然后，停止横向运动以在曝光期间获得稳定的图像位置。

公开(公告)号：WO1995019640A1

公开(公告)日：1995-07-20

申请号：PCT/AT1995000004

申请日：1995-01-12

Applicant: IMS IONEN MIKROFABRIKATIONS SYSTEME GESELLSCHAFT M.B.H. ,  STENGL, Gerhard ,  CHALUPKA, Alfred ,  VONACH, Herbert

Inventor： IMS IONEN MIKROFABRIKATIONS SYSTEME GESELLSCHAFT M.B.H.

IPC: H01L21/266

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/153 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: A charged particle, in particular ion projector system, has a mask arranged in the path of the charged particle beam and provided with transparent spots, in particular openings, arranged asymmetrically to the optical axis, which are reproduced on a wafer by means of lenses arranged in the path of the charged particle beam. The charged particle beam has at least one cross-over (crosses the optical axis at least once) between the mask and the wafer. Charged particles with an opposite charge to the charge of the reproduction particles are supplied into the path of the reproduction charged particle beam in a defined area located between the mask and the wafer. The limits that define said area are selected in such a way that the absolute value of the integral effect of the space charge on the particles that reproduce the mask structures is as high upstream of said area (seen in the direction of radiation) as the absolute value of the integral effect of the space charge downstream of said area.

Abstract translation: 本发明涉及一种投影系统，用于带电粒子，尤其是离子的布置成与特定的带电粒子掩模非对称地配置于光轴透明体，特别是开孔，所述成像使用布置中的带电粒子透镜的光束路径上的晶片的光路中， 其中，所述掩模和晶片之间的带电粒子的束具有至少一个交叉（交叉点与光轴）。 在这种情况下，在掩模和晶片之间的限定区域供给带电相反具有方向到电荷成像的成像颗粒的光束路径中，其中所述定义的范围内的限制是这样选择的粒子的电荷粒子的空间电荷对积分效应的绝对值 将掩模结构成像颗粒（如见于波束方向）在这个区域之前是完全一样的空间电荷的该区域后的积分效应的绝对值一样大。

公开(公告)号：WO1987001865A1

公开(公告)日：1987-03-26

申请号：PCT/AT1986000053

申请日：1986-09-10

Applicant: STENGL, Gerhard ,  LÖSCHNER, Hans

IPC: H01J37/30

CPC classification number: G03F1/74 ,  H01J37/3005 ,  H01J37/3007

Abstract: An ion beam apparatus is used to detect and repair under constant control the defects of a substrate. To that effect, the ion beam apparatus includes a mask (4) arranged in the path of the rays after the ion source (1) and presenting a perforation (5), preferably a round opening. A controllable lens (6) is provided between the ion source (1) and the mask (4) to modify the angle epsilon with which the ion beam leaves the ion source (Fig. 1)

Abstract translation: 离子束装置用于在恒定的控制下检测和修复基板的缺陷。 为此，离子束装置包括布置在离子源（1）之后的射线的路径中并具有穿孔（5）的掩模（4），优选为圆形开口。 在离子源（1）和掩模（4）之间设置可控透镜（6），以改变离子束离开离子源的角度ε（图1）

公开(公告)号：WO2007045501A1

公开(公告)日：2007-04-26

申请号：PCT/EP2006/010158

申请日：2006-10-20

Applicant: CARL ZEISS SMS GMBH ,  BUSCHBECK, Herbert ,  PLATZGUMMER, Elmar ,  STENGL, Gerhard ,  VONACH, Herbert

Inventor： BUSCHBECK, Herbert ,  PLATZGUMMER, Elmar ,  STENGL, Gerhard ,  VONACH, Herbert

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/21

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/21 ,  H01J2237/0492 ,  H01J2237/24578

Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411’), and an inner pole piece (412) having a lowermost end (412’) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C ) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜（403），其包括具有径向内端（411'）的外极片（411）和设置有最下端（412'）的内极片（412） 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极（451）和第二电极（450）的聚焦静电透镜（450） 以及控制器（C），被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

公开(公告)号：WO2006053360A1

公开(公告)日：2006-05-26

申请号：PCT/AT2005/000456

申请日：2005-11-15

Applicant: IMS NANOFABRICATION GMBH ,  STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

Inventor： STENGL, Gerhard ,  BUSCHBECK, Herbert ,  NOWAK, Robert

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: In a pattern-lock system of particle-beam apparatus, reference marks are imaged upon registering means to determine the position of the particle-beam. The registering means are positioned at locations of nominal positions at the imaging plane in order to detect the location of respective images of the reference marks. A registering means comprises a multitude of detective areas arranged beside each other; detection signals produced by the detective areas when bit by radiation from the reference mark are added to a sum signal, wherein the detective areas yield different contributions to the detection signal in relation to a unit of impingent radiation, respectively, resulting in a sum signal varying in dependence of the position of the reference mark image with respect to the detection means.

Abstract translation: 在粒子束装置的图案锁定系统中，参考标记在登记装置上成像以确定粒子束的位置。 登记装置位于成像平面上的标称位置的位置处，以便检测参考标记的各个图像的位置。 登记装置包括彼此相邻布置的大量侦测区域; 检测区域当基准标记的位逐位加上时，由检测区域产生的检测信号被加到和信号中，其中检测区域分别产生相对于有害辐射单位的检测信号的不同贡献，导致总和信号变化 根据参考标记图像相对于检测装置的位置。

公开(公告)号：WO2007017255A1

公开(公告)日：2007-02-15

申请号：PCT/EP2006/007849

申请日：2006-08-08

Applicant: CARL ZEISS SMS GMBH ,  PLATZGUMMER, Elmar ,  STENGL, Gerhard ,  FALKNER, Helmut

Inventor： PLATZGUMMER, Elmar ,  STENGL, Gerhard ,  FALKNER, Helmut

IPC: H01J37/317 ,  H01J37/12

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: The present invention relates to a multi-beamlet multi- column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non- circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

Abstract translation: 多子束多列粒子光学系统技术领域本发明涉及一种多子束多列粒子光学系统，其包括多个列，其被布置成阵列以同时暴露衬底，每个列具有光轴，并且包括：子束产生装置，其包括至少一个 用于产生多个带电粒子束的图案的多孔板，以及包括至少一个电极元件的静电透镜装置; 所述至少一个电极元件具有由面向光轴的内周边缘限定的孔，所述孔在与所述光轴正交的平面中具有中心和预定形状; 其中在所述多个列中的至少一个列中，所述孔的预定形状是非圆形形状，其具有围绕所述孔的中心的来自理想圆的突起和凹陷中的至少一个。

公开(公告)号：WO2007009804A1

公开(公告)日：2007-01-25

申请号：PCT/EP2006/007182

申请日：2006-07-20

Applicant: CARL ZEISS SMS GMBH ,  PLATZGUMMER, Elmar ,  STENGL, Gerhard

Inventor： PLATZGUMMER, Elmar ,  STENGL, Gerhard

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0435

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

Abstract translation: 用于使用带电粒子的多光束施加的光束操纵装置包括具有由带电粒子束穿过的多个孔的多孔板。 加热多孔板的框架部分以降低多孔板内的温度梯度。 此外，考虑到降低温度梯度，与其他区域相比，多孔板的表面的发热率在一些区域可能更高。

公开(公告)号：WO2006086815A3

公开(公告)日：2006-08-24

申请号：PCT/AT2006/000060

申请日：2006-02-16

Applicant: IMS NANOFABRICATION GMBH ,  PLATZGUMMER, Elmar ,  CERNUSCA, Stefan ,  STENGL, Gerhard

Inventor： PLATZGUMMER, Elmar ,  CERNUSCA, Stefan ,  STENGL, Gerhard

IPC: H01J37/317

Abstract: A particle-beam projection processing apparatus (100) for irradiating a target (41), with an illumination system (101) for forming a wide-area illuminating beam (Ip) of energetic electrically charged particles; a pattern definition means (102) for positioning an aperture pattern (21) in the path of the illuminating beam; and a projection system (103) for projecting the beam thus patterned (pb) onto a target (41) to be positioned after the projection system. A foil (34, 35) located across the path of the patterned beam (pb) is positioned between the pattern definition means (102) and the position of the target (41) at a location close to an image (i0) of the aperture pattern (21) formed by the projection system.