THERMAL HISTORY SENSING
    4.
    发明申请
    THERMAL HISTORY SENSING 审中-公开
    热历史传感

    公开(公告)号:WO2012041841A1

    公开(公告)日:2012-04-05

    申请号:PCT/EP2011/066752

    申请日:2011-09-27

    CPC classification number: G01K3/04 G01K7/16

    Abstract: A history sensor is described. The sensor comprises a support substrate comprising a group IV semiconductor; at least one thin-film metal structure connected to at least a first and second contact pad, at least part of said first metal structure being in contact with said group IV semiconductor, wherein said metal is selected such that it reacts with said group IV semiconductor to a metal-compound semiconductor region when exposing said sensor to temperatures around or above a predetermined reaction temperature associated with the formation of said metal-compound semiconductor and wherein the electrical response of said exposed sensor provides information on at least a first part of said thermal exposure.

    Abstract translation: 描述历史传感器。 该传感器包括一个支撑衬底,该支撑衬底包括一组IV半导体; 连接到至少第一和第二接触焊盘的至少一个薄膜金属结构,所述第一金属结构的至少一部分与所述IV族半导体接触,其中选择所述金属使得其与所述IV族半导体 当将所述传感器暴露于大约或高于与所述金属化合物半导体的形成相关联的预定反应温度的温度下时,到金属化合物半导体区域,并且其中所述暴露的传感器的电响应提供至少第一部分所述热 曝光。

    VARIABLE STIFFNESS ACTUATOR
    6.
    发明公开
    VARIABLE STIFFNESS ACTUATOR 有权
    AKTUATOR MIT VARIABLER STEIFIGKEIT

    公开(公告)号:EP3090194A1

    公开(公告)日:2016-11-09

    申请号:EP14828362.5

    申请日:2014-12-30

    CPC classification number: B25J19/068 F16H21/365 F16H35/02

    Abstract: The invention relates to a coupling system for transmitting torque around a central axis of the coupling system, wherein the coupling system comprises; - a stator, - a hypocycloid transmission system rotatably supported by the stator, - an output member for transmitting torque, which output member is rotatably coupled with the stator through the hypocycloid transmission system, wherein, the hypocycloid transmission system comprises a planetary wheel member provided with a drive cam, the output member comprises a bending member at one end thereof coupled with the output member at an outer circumference thereof which bending member extends from the outer circumference of the output member towards the central axis, the drive cam contacts the bending member for driving the output member, and the radial position of the drive cam with respect to the bending member is adjustable through the hypocycloid transmission system,between an outer position proximate the circumference of the output member and an inner position proximate the central axis, for adjusting a desired stiffness of the coupling system.

    Abstract translation: 本发明涉及一种用于在联接系统的中心轴线附近传递扭矩的联接系统,其中该联接系统包括: - 定子, - 由所述定子可旋转地支撑的下摆式传动系统, - 用于传递扭矩的输出构件,所述输出构件通过所述下摆式传动系统与所述定子可旋转地联接,其中,所述下摆式传动系统包括行星轮构件, 所述输出构件包括一弯曲构件,所述弯曲构件的一端在所述输出构件的外圆周处与所述输出构件联接,所述弯曲构件从所述输出构件的外周朝向所述中心轴线延伸,所述驱动凸轮接触所述弯曲构件 用于驱动输出构件,并且驱动凸轮相对于弯曲构件的径向位置可通过下摆式传动系统在靠近输出构件的圆周的外部位置与靠近中心轴的内部位置之间调节,以便调节 耦合系统的期望刚度。

    Thermal history sensing
    9.
    发明公开
    Thermal history sensing 审中-公开
    Messung der Temperaturgeschichte

    公开(公告)号:EP2434267A1

    公开(公告)日:2012-03-28

    申请号:EP10010930.5

    申请日:2010-09-27

    CPC classification number: G01K3/04 G01K7/16

    Abstract: A history sensor is described. The sensor comprises a support substrate comprising a group IV semiconductor; at least one thin-film metal structure connected to at least a first and second contact pad, at least part of said first metal structure being in contact with said group IV semiconductor, wherein said metal is selected such that it reacts with said group IV semiconductor to a metal-compound semiconductor region when exposing said sensor to temperatures around or above a predetermined reaction temperature associated with the formation of said metal-compound semiconductor and wherein the electrical response of said exposed sensor provides information on at least a first part of said thermal exposure.

    Abstract translation: 描述历史传感器。 该传感器包括一个支承衬底,它包括一个IV族半导体; 至少一个薄膜金属结构连接到至少第一和第二接触焊盘,所述第一金属结构的至少一部分与所述IV族半导体接触,其中选择所述金属使得其与所述IV族半导体 当将所述传感器暴露于大约或高于与所述金属化合物半导体的形成相关联的预定反应温度的温度下时,到金属化合物半导体区域,并且其中所述暴露的传感器的电响应提供至少第一部分所述热 曝光。

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