EPITAXIAL REACTOR FOR THE LARGE-SCALE PRODUCTION OF WAFERS
    1.
    发明申请
    EPITAXIAL REACTOR FOR THE LARGE-SCALE PRODUCTION OF WAFERS 审中-公开
    用于大规模生产水泥的外延反应器

    公开(公告)号:WO2006134194A2

    公开(公告)日:2006-12-21

    申请号:PCT/ES2006000351

    申请日:2006-06-15

    Abstract: The invention relates to an epitaxial reactor for the large-scale production of wafers, which comprises a high-performance system for use in the photovoltaic industry. The main innovation of the invention lies in the high susceptor stack density, said susceptors being separated from one another by 4 cm. According to the invention, the susceptors are positioned vertically parallel to one another, interconnected and heated by the Joule effect. The current arrives through specially-designed bushings which connect the exterior (ambient temperature) with the susceptors (1000 °C). A gas flows between the susceptors. In addition, substrates are positioned on the susceptors and an antechamber is disposed therebelow in order to distribute the inlet gas uniformly and to eliminate turbulence. The aforementioned assembly is disposed in a stainless steel chamber which is coated internally with a reflective material and which is cooled externally with water. The susceptors and the antechamber are fixed to a rear connection panel which also contains electrical bushings, thermocouple bushings and a gas inlet and outlet. The outlet gases are partially recirculated, thereby saving gas and increasing efficiency.

    Abstract translation: 本发明涉及用于大规模生产晶片的外延反应器,其包括用于光伏工业的高性能系统。 本发明的主要创新在于高感受体堆密度,所述感受体彼此分开4厘米。 根据本发明,感受体彼此垂直地定位,通过焦耳效应相互连接和加热。 电流通过将外部(环境温度)与基座(1000°C)连接的特殊设计的衬套到达。 气体在感受器之间流动。 此外,基板位于基座上,并且在其下方设置前室,以便均匀地分布入口气体并消除湍流。 上述组件设置在不锈钢室中,其内部涂覆有反射材料,并且用水外部冷却。 感受器和前厅固定在后连接面板上,后连接面板还包含电气衬套,热电偶衬套和气体入口和出口。 出口气体部分再循环,从而节省气体并提高效率。

    EPITAXIAL REACTOR FOR THE LARGE-SCALE PRODUCTION OF WAFERS
    2.
    发明申请
    EPITAXIAL REACTOR FOR THE LARGE-SCALE PRODUCTION OF WAFERS 审中-公开
    用于晶片大规模生产的外延反应器

    公开(公告)号:WO2006134194B1

    公开(公告)日:2007-05-24

    申请号:PCT/ES2006000351

    申请日:2006-06-15

    Abstract: The invention relates to an epitaxial reactor for the large-scale production of wafers, which comprises a high-performance system for use in the photovoltaic industry. The main innovation of the invention lies in the high susceptor stack density, said susceptors being separated from one another by 4 cm. According to the invention, the susceptors are positioned vertically parallel to one another, interconnected and heated by the Joule effect. The current arrives through specially-designed bushings which connect the exterior (ambient temperature) with the susceptors (1000 °C). A gas flows between the susceptors. In addition, substrates are positioned on the susceptors and an antechamber is disposed therebelow in order to distribute the inlet gas uniformly and to eliminate turbulence. The aforementioned assembly is disposed in a stainless steel chamber which is coated internally with a reflective material and which is cooled externally with water. The susceptors and the antechamber are fixed to a rear connection panel which also contains electrical bushings, thermocouple bushings and a gas inlet and outlet. The outlet gases are partially recirculated, thereby saving gas and increasing efficiency.

    Abstract translation: 本发明涉及用于大规模生产晶片的外延反应器,其包括用于光伏工业的高性能系统。 本发明的主要创新在于高感受器堆密度,所述感受器彼此分开4厘米。 根据本发明,感受器彼此垂直平行放置,由焦耳效应互连和加热。 电流通过特殊设计的套管连接外部(环境温度)与感受器(1000°C)。 气体在感受器之间流动。 此外,基板位于基座上,前室布置在其下方,以均匀分配入口气体并消除紊流。 上述组件设置在不锈钢腔室内,该腔室内部涂覆有反射材料并且外部用水冷却。 基座和前室固定在后部连接面板上,后面板上还包含电子套管,热电偶套管和气体入口和出口。 出口气体部分再循环,从而节省了气体并提高了效率。

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