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    METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA
    1.
    发明申请
    METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA 审中-公开
    生产具有大面积面积的单晶硅的方法

    公开(公告)号：US20130143407A1

    公开(公告)日：2013-06-06

    申请号：US13414355

    申请日：2012-03-07

    Applicant: CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

    Inventor： CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

    IPC: H01L21/311 ,  B82Y40/00

    CPC classification number: B81C99/008 ,  B81B2207/056 ,  B81C1/0038 ,  B81C2201/0194

    Abstract: The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.

    Abstract translation: 本发明涉及一种具有大表面积的薄单晶硅的制造方法，特别涉及在硅衬底（或晶片）上制造硅微结构和纳米结构的方法，并将硅微结构和纳米结构从 硅衬底（或晶片）。 在该方法中，通过在硅晶片上沉积金属催化剂，垂直蚀刻衬底，横向蚀刻衬底的步骤，简单地从衬底中提取和转移硅微结构和纳米结构的薄单晶硅。 然后，处理衬底的表面，例如平坦化衬底的表面，以再循环衬底以重复制造薄的单晶硅。 因此，可以充分利用基板，可以实现成本降低的目的，并且可以提高应用。

    FABRICATION METHOD OF CARBON NANOTUBE FIELD EMISSION CATHODE
    2.
    发明申请
    FABRICATION METHOD OF CARBON NANOTUBE FIELD EMISSION CATHODE 审中-公开
    碳纳米管场发射阴极的制备方法

    公开(公告)号：US20100285716A1

    公开(公告)日：2010-11-11

    申请号：US12489450

    申请日：2009-06-23

    Applicant: Borh-Ran Huang ,  Tzu-Ching Lin

    Inventor： Borh-Ran Huang ,  Tzu-Ching Lin

    IPC: H01J9/12

    CPC classification number: H01J9/025 ,  H01J2201/30434

    Abstract: A fabrication method of carbon nanotube field emission cathode is described as follows. Firstly, a composite plating solution including an electroless metal plating solution and a carbon nanotube powder disposed therein is provided. Then, a substrate is provided. The substrate is disposed in the composite plating solution so that an electroless composite plating process for forming a composite material layer on a surface of the substrate is performed. The composite material layer includes a carbon nanotube powder and a metal layer wrapping the carbon nanotube powder.

    Abstract translation: 碳纳米管场致发射阴极的制造方法如下所述。 首先，提供包含非电解金属电镀液和设置在其中的碳纳米管粉末的复合电镀液。 然后，提供基板。 将基板设置在复合电镀液中，从而进行用于在基板的表面上形成复合材料层的无电解复合电镀工序。 复合材料层包括碳纳米管粉末和包裹碳纳米管粉末的金属层。

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