公开(公告)号：WO02080219B1

公开(公告)日：2002-12-05

申请号：PCT/US0209563

申请日：2002-03-29

Applicant: LAM RES CORP ,  CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: A radio frequency excitation coil of an inductive plasma processor includes a planar turn (103) connected in series with a segment (115) of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency coupling to plasma due to azimuthal asymmetries in the chamber and/or the excitation coil. In a single winding embodiment, the stacked segment is close to an interconnection gap between two adjacent planar turns and extends in both directions from the gap to compensate low radio frequency coupling to plasma in the gap region. In an embodiment including two electrically parallel spatially concentric windings, the stacked segment extends beyond one side of an interconnection gap of two adjacent turns, and is aligned with the planar turn such that one end of the stacked segment is directly connected to an end of the planar turn via a straight, short stub. Terminal (111) of the coil is connected to RF excitation circuitry (28) terminals in a housing above the coil by leads (128) extending smoothly and gradually without sharp bends between the coil terminals and the excitation circuitry terminals. Ends of the planar turn (113) and the stacked segment are connected by a lead (116) extending smoothly and gradually without sharp bends between its ends.

Abstract translation: 感应等离子体处理器的射频激励线圈包括与堆叠在平面转弯的一部分上方的线圈的区段（115）串联连接的平坦转弯（103）。 由于腔室和/或激励线圈中的方位角不对称，堆叠的节段被放置在具有与等离子体耦合的弱射频的区域周围。 在单绕组实施例中，堆叠段接近两个相邻平面线匝之间的互连间隙并且从间隙沿两个方向延伸以补偿间隙区域中与等离子体的低射频耦合。 在包括两个电并联的空间同心绕组的实施例中，堆叠节段延伸超过两个相邻匝的互连间隙的一侧，并且与平面匝对齐，使得堆叠节段的一端直接连接到 通过一个直的，短的平头转弯。 线圈的端子（111）通过在线圈端子和激励电路端子之间平滑且逐渐延伸而没有急剧弯曲的引线（128）连接到线圈上方壳体中的RF激励电路（28）端子。 平面转弯（113）和堆叠部分的端部通过在其端部之间没有急剧弯曲地平稳且逐渐延伸的引线（116）连接。

公开(公告)号：WO2002080220A1

公开(公告)日：2002-10-10

申请号：PCT/US2002/009564

申请日：2002-03-29

Applicant: LAM RESEARCH CORPORATION ,  VELTROP, Robert, G. ,  CHEN, Jian, J. ,  WICKER, Thomas, E.

Inventor： VELTROP, Robert, G. ,  CHEN, Jian, J. ,  WICKER, Thomas, E.

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

Abstract translation: 感应等离子体处理器包括具有多个绕组的RF等离子体激励线圈，每个绕组具有并联连接的第一端，以经由单个匹配网络由单个RF源驱动。 绕组的第二端通过终端电容器连接到地，然后由引线接地。 包括围绕环形铁芯的绕组的电流传感器耦合到每个终端电容器和地之间的引线。 电流传感器被接地屏蔽包围。 从环境RF环境到电流传感器有最小的电磁干扰，以提供精确的电流传感器。

公开(公告)号：WO02080221B1

公开(公告)日：2002-11-28

申请号：PCT/US0209565

申请日：2002-03-29

Applicant: LAM RES CORP ,  CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having different couplings to different regions of plasma in the chamber to control plasma flux distribution incident on a processed workpiece. The coil is powered by a single radio frequency generator via a single matching network. Input and output ends of each winding are respectively connected to input and output tuning capacitors. In a first embodiment, the location of maximum inductive coupling of the radio frequency to the plasma and the current magnitude in each winding are respectively mainly determined by values of the output and input capacitors. By adjusting all the input and output capacitors simultaneously, the current to a winding can be varied while the current to the other winding can be maintained constant as if these windings were completely de-coupled andindependent. Therefore, the capacitors can control the plasma density in different radial and azimuthal regions. In another embodiment, a relatively low frequency drives the coil whereby each winding has a relatively short electrical length, causing substantially small standing wave current and voltage variations. The output capacitor for each winding adjusts current magnitude, to eliminate the need for the input capacitors and reduce operational complexity.

Abstract translation: 感应等离子体处理器包括具有多个并联的空间上同心的绕组（1）的多绕组射频线圈，其具有提供给它们的不同量的RF功率，以及（2）被布置成产生具有不同耦合到不同等离子体区域的电磁场 该室用于控制入射在加工工件上的等离子体通量分布。 线圈由单个射频发生器通过单个匹配网络供电。 每个绕组的输入和输出端分别连接到输入和输出调谐电容器。 在第一实施例中，射频与等离子体的最大电感耦合的位置和每个绕组中的电流大小分别主要由输出和输入电容器的值决定。 通过同时调节所有输入和输出电容器，可以改变绕组的电流，同时可以保持恒定的电流到同一绕组的电流，就好像这些绕组完全去耦合和独立的一样。 因此，电容器可以控制不同径向和方位区域的等离子体密度。 在另一个实施例中，较低频率驱动线圈，由此每个绕组具有相对较短的电长度，导致基本上较小的驻波电流和电压变化。 每个绕组的输出电容器调整电流幅值，以消除对输入电容器的需要，降低操作复杂度。

公开(公告)号：WO2002080221A1

公开(公告)日：2002-10-10

申请号：PCT/US2002/009565

申请日：2002-03-29

Applicant: LAM RESEARCH CORPORATION ,  CHEN, Jian, J. ,  VELTROP, Robert, G. ,  WICKER, Thomas, E.

Inventor： CHEN, Jian, J. ,  VELTROP, Robert, G. ,  WICKER, Thomas, E.

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having different couplings to different regions of plasma in the chamber to control plasma flux distribution incident on a processed workpiece. The coil is powered by a single radio frequency generator via a single matching network. Input and output ends of each winding are respectively connected to input and output tuning capacitors. In a first embodiment, the location of maximum inductive coupling of the radio frequency to the plasma and the current magnitude in each winding are respectively mainly determined by values of the output and input capacitors. By adjusting all the input and output capacitors simultaneously, the current to a winding can be varied while the current to the other winding can be maintained constant as if these windings were completely de-coupled andindependent. Therefore, the capacitors can control the plasma density in different radial and azimuthal regions. In another embodiment, a relatively low frequency drives the coil whereby each winding has a relatively short electrical length, causing substantially small standing wave current and voltage variations. The output capacitor for each winding adjusts current magnitude, to eliminate the need for the input capacitors and reduce operational complexity.

Abstract translation: 感应等离子体处理器包括具有多个电气并联的空间同心绕组（1）的多绕组射频线圈，所述绕组具有提供给它们的不同RF功率量，并且（2）被布置为产生电磁场， 不同的耦合到腔室中等离子体的不同区域以控制入射到加工工件上的等离子体通量分布。 线圈由单个射频发生器通过单个匹配网络供电。 每个绕组的输入和输出端分别连接到输入和输出调谐电容器。 在第一实施例中，射频到等离子体的最大电感耦合的位置以及每个绕组中的电流幅度主要分别由输出和输入电容器的值确定。 通过同时调整所有输入和输出电容器，绕组电流可以变化，而到另一个绕组的电流可以保持恒定，就好像这些绕组完全解耦和无关。 因此，电容器可以控制不同径向和方位区域的等离子体密度。 在另一个实施例中，相对较低的频率驱动线圈，由此每个绕组具有相对较短的电长度，导致基本小的驻波电流和电压变化。 每个绕组的输出电容可调整电流大小，以消除对输入电容器的需求并降低操作复杂性。

公开(公告)号：WO0019481A9

公开(公告)日：2002-01-31

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：WO0122478A9

公开(公告)日：2002-11-28

申请号：PCT/US0024866

申请日：2000-09-11

Applicant: LAM RES CORP ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

Inventor： KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

IPC: H05H1/46 ,  B01J19/02 ,  B01J19/08 ,  C04B35/565 ,  C23C16/44 ,  H01L21/00 ,  H01L21/3065

CPC classification number: H01L21/67115 ,  C23C16/4401

Abstract: A plasma processing chamber including a ceramic liner heated by radiant heating. The liner can be a series of tiles or a continuous cylindrical liner. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. To remove excess heat from the liner, the ceramic liner can be supported on a resilient aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Abstract translation: 包括通过辐射加热加热的陶瓷衬垫的等离子体处理室。 衬垫可以是一系列瓷砖或连续的圆柱形衬套。 衬垫和诸如气体分配板和等离子体屏幕的其它部件可以由SiC制成，其有利地限制等离子体并且提供腔室的内表面的温度控制。 为了从衬里去除多余的热量，陶瓷衬套可以被支撑在弹性铝支架上，弹性铝支撑框架将热量从衬套传导到温度受控构件，例如室的顶板。 支撑框架可以包括连续的上部和分段的下部，其允许在等离子体室中的半导体衬底的处理期间容纳热应力。

公开(公告)号：WO2002080219A1

公开(公告)日：2002-10-10

申请号：PCT/US2002/009563

申请日：2002-03-29

Applicant: LAM RESEARCH CORPORATION ,  CHEN, Jian, J. ,  VELTROP, Robert, G. ,  WICKER, Thomas, E.

Inventor： CHEN, Jian, J. ,  VELTROP, Robert, G. ,  WICKER, Thomas, E.

IPC: H01J37/32

CPC classification number: H01J37/321

Abstract: A radio frequency excitation coil of an inductive plasma processor includes a planar turn (103) connected in series with a segment (115) of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency coupling to plasma due to azimuthal asymmetries in the chamber and/or the excitation coil. In a single winding embodiment, the stacked segment is close to an interconnection gap between two adjacent planar turns and extends in both directions from the gap to compensate low radio frequency coupling to plasma in the gap region. In an embodiment including two electrically parallel spatially concentric windings, the stacked segment extends beyond one side of an interconnection gap of two adjacent turns, and is aligned with the planar turn such that one end of the stacked segment is directly connected to an end of the planar turn via a straight, short stub. Terminal (111) of the coil is connected to RF excitation circuitry (28) terminals in a housing above the coil by leads (128) extending smoothly and gradually without sharp bends between the coil terminals and the excitation circuitry terminals. Ends of the planar turn (113) and the stacked segment are connected by a lead (116) extending smoothly and gradually without sharp bends between its ends.

Abstract translation: 感应等离子体处理器的射频激励线圈包括与平行转弯的一部分上方堆叠的线圈的段（115）串联连接的平面转向（103）。 由于室和/或励磁线圈中的方位不对称性，堆叠段被放置在具有与等离子体耦合的弱射频的区域周围。 在单绕线实施例中，堆叠段接近两个相邻平面匝之间的互连间隙，并且在两个方向上从间隙延伸，以补偿在间隙区域中与等离子体的低射频耦合。 在包括两个电平行空间同心绕组的实施例中，堆叠段延伸超过两个相邻匝的互连间隙的一侧，并且与平面匝对准，使得堆叠段的一端直接连接到 通过直的，短的短截线进行平面转弯。 线圈的端子（111）通过在线圈端子和激励电路端子之间平滑且逐渐延伸而没有尖锐弯曲的引线（128）连接到线圈上方壳体中的RF激励电路（28）端子。 平面转弯（113）和堆叠段的端部通过平滑且逐渐延伸的引线（116）连接，而其端部之间没有尖锐的弯曲。

公开(公告)号：WO2001022478A1

公开(公告)日：2001-03-29

申请号：PCT/US2000/024866

申请日：2000-09-11

Applicant: LAM RESEARCH CORPORATION ,  KENNEDY, William, S. ,  MARASCHIN, Robert, A. ,  WICKER, Thomas, E.

Inventor： KENNEDY, William, S. ,  MARASCHIN, Robert, A. ,  WICKER, Thomas, E.

IPC: H01L21/00

CPC classification number: H01L21/67115 ,  C23C16/4401

Abstract: A plasma processing chamber including a ceramic liner heated by radiant heating. The liner can be a series of tiles or a continuous cylindrical liner. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. To remove excess heat from the liner, the ceramic liner can be supported on a resilient aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Abstract translation: 包括通过辐射加热加热的陶瓷衬垫的等离子体处理室。 衬垫可以是一系列瓷砖或连续的圆柱形衬套。 衬垫和诸如气体分配板和等离子体屏幕的其它部件可以由SiC制成，其有利地限制等离子体并且提供腔室的内表面的温度控制。 为了从衬里去除多余的热量，陶瓷衬套可以被支撑在弹性铝支架上，弹性铝支撑框架将热量从衬套传导到温度受控构件，例如室的顶板。 支撑框架可以包括连续的上部和分段的下部，其允许在等离子体室中的半导体衬底的处理期间容纳热应力。

公开(公告)号：WO0019481A2

公开(公告)日：2000-04-06

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：WO1998014636A1

公开(公告)日：1998-04-09

申请号：PCT/US1997017663

申请日：1997-09-30

Applicant: LAM RESEARCH CORPORATION ,  KENNEDY, William, S. ,  WICKER, Thomas, E. ,  MARASCHIN, Robert, A. ,  COOK, Joel, M. ,  SCHOEPP, Alan, M.

Inventor： LAM RESEARCH CORPORATION

IPC: C23C16/44

CPC classification number: C23C16/45521 ,  C23C16/458 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/915

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area (30) between a focus ring (16) and an electrostatic chuck (14) in a plasma processing chamber (10) is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volatile by products thereof into the annular gap without adversely affecting edge etch performance.

Abstract translation: 在用于处理诸如半导体晶片的衬底的等离子体处理系统中，通过提供等离子体处理室（10）中的聚焦环（16）和静电吸盘（14）之间的区域（30）中的聚合物的沉积， 在卡盘和聚焦环之间的间隙中的气体。 一系列通道将间隙气体传送到衬底支撑件的外表面和围绕衬底支撑件的聚焦环的内表面之间的环形间隙。 提供给环形间隙的间隙气体优选为不影响晶片加工操作的诸如氦气等气体。 在等离子体蚀刻的情况下，间隙气体以足以阻止工艺气体的迁移并由其产物挥发到环形间隙中的流量提供，而不会不利地影响边缘蚀刻性能。