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公开(公告)号：WO2018199642A1
公开(公告)日：2018-11-01
申请号：PCT/KR2018/004841
申请日：2018-04-26
Applicant: (주)디엔에프
Abstract: 본 발명은 신규한 금속 트리아민 화합물, 이의 제조방법, 이를 포함하는 금속 함유 박막증착용 조성물 및 이를 이용한 금속 함유 박막의 제조방법에 관한 것으로, 본 발명의 금속 트리아민 화합물은 반응성이 뛰어나며 열적으로 안정하고, 휘발성이 높으며, 저장안정성이 높아 금속 함유 전구체로 이용하여 고밀도 및 고순도의 금속 함유 박막을 용이하게 제조할 수 있다.
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公开(公告)号：KR101178214B1
公开(公告)日：2012-08-29
申请号：KR1020100031255
申请日：2010-04-06
Applicant: (주)디엔에프
IPC: C08K13/00 , H01L21/306 , G03F7/42 , C09D9/00
Abstract: 본 발명은 톨루엔 및 헵탄으로부터 선택되는 1종 이상의 화합물과, (C12-C16)이소파라핀 혼합물을 포함하는 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법에 관한 것이다.
자세하게는, 기재 위에 형성된 폴리실라잔 코팅 막(도막, 피막 등)이 공정과정에서 가장자리에 불필요하게 돌출하게 되는데, 이러한 폴리실라잔 코팅 막이 그대로 남아 있을 경우, 반도체 공정상에 심각한 문제를 초래할 수 있기 때문에 이를 화학적으로 제거할 수 있는 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법을 제공하고자 한다.Abstract translation: 本发明涉及甲苯，并从庚烷中选择包含至少一种化合物的聚硅氮烷处理的溶剂，并使用相同的，（C12-C16）异链烷烃混合物和聚硅氮烷处理方法。
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公开(公告)号：KR1020110130563A
公开(公告)日：2011-12-06
申请号：KR1020100049950
申请日：2010-05-28
Applicant: (주)디엔에프
CPC classification number: G03F7/422 , C11D7/261 , C11D11/0047
Abstract: PURPOSE: A photo-resist stripping composition is provided to improve the corrosion resistance characteristic of the composition to the conductive metal film, the silicon oxide film, or the silicon nitride film of a photo-resist. CONSTITUTION: A photo-resist stripping composition includes a solvent, water, a corrosion inhibitor, and base. The solvent is selected from a group including diethylene glycol t-butyl ether, diethylene glycol t-butyl ether acetate, propylene glycol mono methyl ether, propylene glycol mono methyl ether acetate, 1-methoxy-2-propanol, 1-methoxy-2-butanol, N-methyl pyrrolidone, dimethyl sulfoxide, dimethyl acetamide, and the mixture of the same. The corrosion inhibitor is selected from a group including benzotriazole, benzotriazole-1-(2,2-dimethylethanol), benzotriazole-1-(2-t-butoxymethylethanol), 1-acetylbenzotriazole, 5-aminotetrazole, and the mixture of the same.
Abstract translation: 目的：提供光阻剥离组合物以提高组合物对导电金属膜，氧化硅膜或光致抗蚀剂的氮化硅膜的耐腐蚀特性。 构成：光致抗蚀剂剥离组合物包括溶剂，水，缓蚀剂和碱。 溶剂选自二甘醇叔丁基醚，二甘醇叔丁基醚乙酸酯，丙二醇单甲醚，丙二醇单甲醚乙酸酯，1-甲氧基-2-丙醇，1-甲氧基-2-丙醇， 丁醇，N-甲基吡咯烷酮，二甲基亚砜，二甲基乙酰胺及其混合物。 腐蚀抑制剂选自苯并三唑，苯并三唑-1-（2,2-二甲基乙醇），苯并三唑-1-（2-叔丁氧基甲基乙醇），1-乙酰基苯并三唑，5-氨基四唑及其混合物。
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公开(公告)号：KR1020110006586A
公开(公告)日：2011-01-20
申请号：KR1020100032306
申请日：2010-04-08
Applicant: (주)디엔에프
IPC: C09K13/00 , C11D7/24 , H01L21/306 , C08L71/00
Abstract: PURPOSE: A polysilazane treatment solvent is provided to enable use in edge cutting and backside rinsing due to high polysilazane solubility and to reduce the amount of gas generated from a waste liquid tank. CONSTITUTION: A polysilazane treatment solvent is a mixture of two or more of the following: toluene, heptanes, and etherified. The etherified material is selected from diethyl ether, ethyl phenyl ether, diisopropylether, diisopentylether, or their mixture. A method for treating polysilazane comprises the steps of: applying the polysilazane treatment solvent to a substrate(110); and removing polysilazane by spraying the polysilazane treatment solvent to the polysilazane(130) of filtrate(140) or protrusion.
Abstract translation: 目的：提供聚硅氮烷处理溶剂，以便由于高的聚硅氮烷溶解度而可用于边缘切割和背面冲洗，并减少废液罐产生的气体量。 构成：聚硅氮烷处理溶剂是以下两种或更多种的混合物：甲苯，庚烷和醚化。 醚化物质选自乙醚，乙基苯基醚，二异丙醚，二异戊醚或它们的混合物。 一种处理聚硅氮烷的方法包括以下步骤：将聚硅氮烷处理溶剂施加到基底（110）上; 并通过将聚硅氮烷处理溶剂喷洒到滤液（140）或突起的聚硅氮烷（130）中去除聚硅氮烷。
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Patent Agency Ranking
公开(公告)号：KR1020110073176A
公开(公告)日：2011-06-29
申请号：KR1020100031255
申请日：2010-04-06
Applicant: (주)디엔에프
IPC: C08K13/00 , H01L21/306 , G03F7/42 , C09D9/00
CPC classification number: C08J7/02 , C08J2383/16 , C09D9/00 , G03F7/42 , H01L21/02087 , H01L21/02222 , H01L21/02282
Abstract: PURPOSE: A polysilazane treatment solvent is provided to ensure high solubility of polysilazane, to enable use for edge cutting and rear side rinse, and to reduce the plugging of a wastewater line with no reactivity to polysilazane or substrate. CONSTITUTION: A polysilazane treatment solvent includes at least one kind of a compound selected from toluene and heptanes and a (C12-C16) isoparaffin mixture. A method for treating polysilazane using the polysilazane solvent comprises the steps of: applying a polysilazane solution(120) to a substrate(110); spraying the polysilazane treatment solvent to polysilazane of protrusions(130) or filtrate(140) formed at an edge part or backside of the polysilazane-applied surface, and removing that polysilazane.
Abstract translation: 目的：提供聚硅氮烷处理溶剂，以确保聚硅氮烷的高溶解度，可用于边缘切割和后侧冲洗，并减少对聚硅氮烷或基材无反应性的废水管线堵塞。 构成：聚硅氮烷处理溶剂包括至少一种选自甲苯和庚烷的化合物和（C 12 -C 16）异链烷烃混合物。 使用聚硅氮烷溶剂处理聚硅氮烷的方法包括以下步骤：将聚硅氮烷溶液（120）施加到基底（110）上; 将聚硅氮烷处理溶剂喷射到形成在聚硅氮烷涂覆的表面的边缘部分或背面的突起（130）或滤液（140）的聚硅氮烷，并除去聚硅氮烷。
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公开(公告)号：KR101691850B1
公开(公告)日：2017-01-03
申请号：KR1020100049950
申请日：2010-05-28
Applicant: (주)디엔에프
Abstract: 본발명은포토레지스트스트립공정에서온도조건에따른휘발이발생하는양을줄여조성변화가없도록하며, 동시에변질또는경화된포토레지스트가제거되는동안상기조성물에의해금속배선이나산화막, 질화막의부식이일어나는것을막고, 박리효과도우수한포토레지스트스트리퍼조성물을제공한다.
Abstract translation: 目的：提供光阻剥离组合物以提高组合物对导电金属膜，氧化硅膜或光致抗蚀剂的氮化硅膜的耐腐蚀特性。 构成：光致抗蚀剂剥离组合物包括溶剂，水，缓蚀剂和碱。 溶剂选自二甘醇叔丁基醚，二甘醇叔丁基醚乙酸酯，丙二醇单甲醚，丙二醇单甲醚乙酸酯，1-甲氧基-2-丙醇，1-甲氧基-2-丙醇， 丁醇，N-甲基吡咯烷酮，二甲基亚砜，二甲基乙酰胺及其混合物。 腐蚀抑制剂选自苯并三唑，苯并三唑-1-（2,2-二甲基乙醇），苯并三唑-1-（2-叔丁氧基甲基乙醇），1-乙酰基苯并三唑，5-氨基四唑及其混合物。
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公开(公告)号：KR101178215B1
公开(公告)日：2012-08-29
申请号：KR1020100032306
申请日：2010-04-08
Applicant: (주)디엔에프
IPC: C09K13/00 , C11D7/24 , H01L21/306 , C08L71/00
Abstract: 본 발명은 기재 위에 형성된 폴리실라잔 코팅 막(도막, 피막 등)이 공정과정에서 가장자리에 불필요하게 돌출하게 되는데, 이러한 잔존하는 폴리실라잔 코팅을 화학적으로 제거할 수 있는 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법을 제공하고자 한다.
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公开(公告)号：KR1020110012581A
公开(公告)日：2011-02-09
申请号：KR1020090070363
申请日：2009-07-31
Applicant: (주)디엔에프
IPC: C09D183/08
CPC classification number: C09D183/16 , C08L83/04
Abstract: PURPOSE: A polysilazane coating composition is provided to enable use as a material of electric components such as an interlayer insulating film, dielectric film, planarized film, passivation membrane, and separation insulator. CONSTITUTION: A polysilazane coating composition comprises a polysilazane solution and hydrogen silsesquioxane. The polysilazane includes a skeleton represented by chemical formula 1 and has 3,000-10,000 of average molecular weight. A weight ratio of the hydrogen silsesquioxane and polysilazane solution is 10 : 0.1~2. A method for preparing the polysilazane coating composition includes a step for mixing a solution containing the polysilazane with hydrogen silsesquioxane in a weight ratio of 10 : 0.1~2.
Abstract translation: 目的：提供聚硅氮烷涂料组合物，以使其能够用作诸如层间绝缘膜，电介质膜，平坦化膜，钝化膜和分离绝缘体之类的电子部件的材料。 构成：聚硅氮烷涂料组合物包含聚硅氮烷溶液和氢倍半硅氧烷。 聚硅氮烷包括由化学式1表示的骨架，具有3,000-10,000的平均分子量。 氢倍半硅氧烷和聚硅氮烷溶液的重量比为10：0.1〜2。 制备聚硅氮烷涂料组合物的方法包括将含有聚硅氮烷的溶液与重量比为10：0.1〜2的氢倍半硅氧烷混合的步骤。
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公开(公告)号：KR1020110012574A
公开(公告)日：2011-02-09
申请号：KR1020090070351
申请日：2009-07-31
Applicant: (주)디엔에프
IPC: C09D183/08
CPC classification number: C09D183/16 , C08K5/544
Abstract: PURPOSE: A polysilazane composition is provided to reduce the volume contraction of silicon dioxide and to form a silicon oxide film suitable for electric components with excellent film texture. CONSTITUTION: A polysilazane composition for forming a film comprises a polysilazane solution and aminosilane. A method for preparing the polysilazane composition comprises a step of mixing a solution including a skeleton represented by chemical formula 1 in which polysilazane with an average molecular weight of 3,000-10,000 is dissolved, with aminosilane of chemical formula 2: H_mSi(NR^1R^2)_(4-m) or chemical formula 3: H_nSi(ONR^3R^4)_(4-n) in a weight ratio of 10 : 0.1~2.
Abstract translation: 目的：提供聚硅氮烷组合物以减少二氧化硅的体积收缩并形成适合于具有优异膜组织的电组件的氧化硅膜。 构成：用于形成膜的聚硅氮烷组合物包含聚硅氮烷溶液和氨基硅烷。 制备聚硅氮烷组合物的方法包括将包含其中溶解有平均分子量为3,000-10,000的聚硅氮烷的化学式1所示骨架的溶液与化学式2的氨基硅烷混合的步骤：H_mSi（NR 1 R 1） 2）_（4-m）或化学式3：重量比为10：0.1〜2的H_nSi（ONR ^ 3R ^ 4）_（4-n）
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