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公开(公告)号：KR1020140100593A
公开(公告)日：2014-08-18
申请号：KR1020130012653
申请日：2013-02-05
Applicant: (주)파트론
CPC classification number: H03H3/02 , H03H9/1021 , H03H9/1035 , H03H9/19 , H03H9/21
Abstract: The present invention relates to a crystal device which comprises a sheet formed by a lead of the crystal device being in a semi-cured state and then turning cured, and to a method to manufacture the same. According to the present invention, the cost of the lead of the crystal device can be reduced; manufacturing process is easy; and a process of assembling the lead with the crystal device is easy and thus can reduce the cost of the assembling process. As such, the overall yield can be increased while the cost is cut down. The crystal device of the present invention is a crystal device which comprises a package structure, a crystal piece, and a lead, wherein the package structure includes: a cavity mounting the crystal piece, the crystal piece mounted inside the cavity, and the lead having one side joined with the package structure in a semi-cured state and comprising a sheet made of a resin that closes an opening part of the cavity in the process of curing.
Abstract translation: 本发明涉及一种晶体装置，其包括由晶体装置的引线形成为半固化状态然后转动固化的片材及其制造方法。 根据本发明，可以降低晶体装置的引线的成本; 制造工艺容易; 并且将引线与晶体装置组装的工艺容易，因此可以降低组装过程的成本。 因此，可以提高整体产量，同时降低成本。 本发明的晶体装置是包括封装结构，晶片和引线的晶体装置，其特征在于，所述封装结构包括：安装所述晶体片的腔体，安装在所述腔体内的所述晶体片，所述引线具有 一侧以半固化状态与封装结构连接，并且包括在固化过程中封闭空腔的开口部分的由树脂制成的片材。
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公开(公告)号：KR1020140098940A
公开(公告)日：2014-08-11
申请号：KR1020130011255
申请日：2013-01-31
Applicant: (주)파트론
CPC classification number: H03H9/08 , H03B5/32 , H03H3/04 , H03H9/1021
Abstract: The present invention relates to a crystal device and a manufacturing method thereof, capable of correcting an oscillation frequency of a crystal piece by sensing the temperature in a cavity of the crystal device and simplifying a manufacturing process by forming a lid with a resin sheet. The size of the crystal device is reduced by mounting a thermistor. The oscillation frequency of the crystal piece is corrected as the temperature in the cavity is sensed. A bonding process is simplified by forming the lid with the sheet which is bonded to a package structure with a semi-curable state and is cured. The insulation of the lid is increased. The crystal device according to the present invention includes the package structure with the cavity, the crystal piece which is mounted in the cavity and generates a vibration, the thermistor which is separated from the crystal piece in the cavity and senses the temperature in the cavity, and the lid whose one side is bonded to the opening part of the cavity with the semi-curable state and which is formed with resins to be cured and seal the cavity.
Abstract translation: 晶体装置及其制造方法技术领域本发明涉及一种晶体装置及其制造方法，其能够通过感应晶体装置的空腔内的温度来校正晶体振荡频率，并且通过用树脂片形成盖来简化制造工艺。 通过安装热敏电阻可以减小晶体器件的尺寸。 当检测到空腔中的温度时，校正晶体片的振荡频率。 通过用结合到具有半固化状态的封装结构的片材形成盖子并使其固化来简化接合工艺。 盖的绝缘增加。 根据本发明的晶体装置包括具有空腔的封装结构，安装在腔中的晶体片产生振动，该热敏电阻与空腔中的晶体片分离并感测空腔中的温度， 以及其一侧以半固化状态结合到腔的开口部并且形成有待固化的树脂并密封腔的盖。
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Patent Agency Ranking
公开(公告)号：KR101469005B1
公开(公告)日：2014-12-08
申请号：KR1020130011255
申请日：2013-01-31
Applicant: (주)파트론
Abstract: 본발명은수정디바이스의캐비티내부의온도를감지하여수정편의발진주파수를보정할수 있도록하고, 리드를수지로형성된시트로형성하여제조공정이단순한수정디바이스및 그제조방법에관한것으로, 서미스터를실장하여수정디바이스의소형화를도모할수 있고, 캐비티내부의온도를감지하여수정편의발진주파수를보정할수 있는효과가있고, 리드를반경화상태로패키지구조물과접합되었다가경화되는시트로형성하여접합공정을간단하게할 수있고, 리드의단열성을증대시킬수 있는효과가있다. 본발명의수정디바이스는캐비티를구비한패키지구조물, 상기캐비티내부에실장되어진동을발생시키는수정편, 상기캐비티내에서상기수정편과이격되어배치되며상기캐비티내부의온도를감지하는서미스터및 반경화상태로일면이상기캐비티의개구부에접합되고, 경화되어상기캐비티를밀폐하는수지로형성된리드를포함한다.
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公开(公告)号：KR101213690B1
公开(公告)日：2012-12-18
申请号：KR1020100133655
申请日：2010-12-23
Applicant: (주)파트론
Abstract: 본발명에의한수정디바이스의 IC칩몰딩패키지및 그제조방법이개시된다. 본발명에따른 IC칩몰딩패키지는다수의금속기판으로이루어진지지기판; 및상기지지기판위에소정의보호재로몰딩되고, 상기지지기판에형성된다수의금속기판각각에접촉하는다수의볼이형성되어있는 IC칩을포함하고, 상기 IC칩이본딩되어몰딩되지않는상기지지기판의일부가몰딩된상기 IC칩에밴딩되어있는것을특징으로한다. 본발명은수정디바이스의초소형화를가능하게할 뿐아니라, 공정비용을절감할수 있다.
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公开(公告)号：KR101469607B1
公开(公告)日：2014-12-08
申请号：KR1020130012653
申请日：2013-02-05
Applicant: (주)파트론
Abstract: 본발명의수정디바이스의리드가반경화상태였다가경화되어형성된시트를포함하는수정디바이스및 그제조방법에관한것으로, 본발명에따르면, 수정디바이스의리드의단가를낮출수 있으며그 제조공정이용이하며, 상기리드를수정디바이스에조립하는공정이용이하여조립공정단가를낮출수 있어, 전체적으로수율을높이고단가를줄일수 있는효과가있다. 본발명의수정디바이스는패키지구조물, 수정편및 리드를포함하는수정디바이스로서, 상기패키지구조물은상기수정편을실장하는캐비티를구비하고, 상기수정편은상기캐비티내부에실장되고, 상기리드는반경화상태로일면이상기패키지구조물과접합되고, 경화되어상기캐비티의개구부를밀폐하는수지로형성된시트를포함한다.
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公开(公告)号：KR1020140057704A
公开(公告)日：2014-05-14
申请号：KR1020120121068
申请日：2012-10-30
Applicant: (주)파트론
Abstract: The present invention relates to a temperature compensated crystal oscillator and a mounting method thereof. The temperature compensated crystal oscillator according to one embodiment of the present invention includes a package structure; a crystal piece mounted in a cavity; an IC chip combined with the lower surface of the package structure; and a lead covering the opening part of the cavity. According to one embodiment of the present invention, at least one IC chip bonding pad is formed in the lower surface of the package structure.
Abstract translation: 本发明涉及一种温度补偿晶体振荡器及其安装方法。 根据本发明的一个实施例的温度补偿晶体振荡器包括封装结构; 安装在空腔中的水晶片; IC芯片与封装结构的下表面结合; 以及覆盖空腔的开口部分的引线。 根据本发明的一个实施例，在封装结构的下表面中形成至少一个IC芯片焊盘。
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公开(公告)号：KR1020120071919A
公开(公告)日：2012-07-03
申请号：KR1020100133655
申请日：2010-12-23
Applicant: (주)파트론
CPC classification number: H01L23/31 , H01L21/563 , H01L23/29 , H01L23/50 , H01L24/42
Abstract: PURPOSE: An IC chip molding package for a crystal device and a manufacturing method thereof are provided to micro-miniaturize the crystal device by loading a crystal on an IC chip molding package after the IC chip molding package is formed by molding an IC chip bonded on a supporting substrate. CONSTITUTION: A supporting substrate, which is made out of a plurality of metal plates with a certain pattern, is prepared(S210). An IC chip is bonded to the supporting substrate(S220). The IC chip bonded to the supporting substrate is molded(S230). An IC chip molding package is formed by molding the bonded IC chip using a protection material(S240). A crystal is loaded on the IC chip molding package(S250).
Abstract translation: 目的：提供一种用于晶体器件的IC芯片成型封装及其制造方法，通过在IC芯片成型封装之后将晶体加载在IC芯片成型封装上，使结晶器件通过模制IC 支撑基板。 构成：制备由具有一定图案的多个金属板制成的支撑基板（S210）。 将IC芯片接合到支撑基板（S220）。 模制与支撑基板接合的IC芯片（S230）。 通过使用保护材料成型接合IC芯片来形成IC芯片成型封装（S240）。 将晶体装载在IC芯片成型封装（S250）上。
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