Patent search ap:("株式会社瑞萨科技") AND inv:"佐藤幸弘" Page 1

1.

发明公开
半导体器件有权转让

公开(公告)号：CN101673729A

公开(公告)日：2010-03-17

申请号：CN200910147421.6

申请日：2009-06-10

Applicant: 株式会社瑞萨科技

Inventor： 佐藤幸弘 , 宇野友彰

IPC: H01L25/00 , H01L23/48 , H01L23/482 , H02M3/10

CPC classification number: H01L23/492 , H01L23/3107 , H01L23/4952 , H01L23/49524 , H01L23/49548 , H01L23/49575 , H01L23/49582 , H01L24/05 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/91 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05554 , H01L2224/05644 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4847 , H01L2224/48639 , H01L2224/48644 , H01L2224/49111 , H01L2224/49112 , H01L2224/49113 , H01L2224/49171 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85439 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H02M7/003 , H01L2924/00014 , H01L2224/83 , H01L2224/84 , H01L2924/00 , H01L2924/00012

Abstract: 本发明提供一种半导体器件。在半导体器件(SM1)的封装(PA)内包装了形成有功率金氧半场效晶体管的半导体芯片(4PH，4PL)、和形成有控制其动作的控制电路的半导体芯片(4D)，半导体芯片(4PH，4PL，4D)各自被搭载在印模焊垫(7D1，7D2，7D3)上。高边的半导体芯片(4PH)的源电极用的接合焊垫(12S1，12S2)，经由金属板(8A)与印模焊垫(7D2)电连接。在印模焊垫(7D2)的上表面设有形成于搭载了半导体芯片(4PL)的区域的电镀层(9b)、以及形成于接合有金属板(8A)的区域的电镀层(9c)，电镀层(9b)和电镀层(9c)经由未形成有电镀层的区域被隔开。本发明可提高半导体器件的可靠性。

2.

发明公开
半导体器件失效转让

公开(公告)号：CN1677666A

公开(公告)日：2005-10-05

申请号：CN200510007761.0

申请日：2005-02-16

Applicant: 株式会社瑞萨科技

Inventor： 佐藤幸弘 , 宇野友彰 , 松浦伸悌 , 白石正树

IPC: H01L25/00 , H01L23/495 , H02M3/155

CPC classification number: H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754

Abstract: 本发明提供了一种具有这样一个电路的非绝缘型DC－DC转换器，在该电路中用于高压侧开关的功率MOS·FET和用于低压侧开关的功率MOS·FET串联连接。在非绝缘型DC－DC转换器中，用于高压侧开关的功率晶体管、用于低压侧开关的功率晶体管和驱动这些功率晶体管的驱动电路分别由不同的半导体芯片构成。这三个半导体芯片被容纳在一个封装中，并且包括用于高压侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被彼此邻近地布置。

3.

发明授权
半导体器件失效转让

公开(公告)号：CN100524735C

公开(公告)日：2009-08-05

申请号：CN200510007761.0

申请日：2005-02-16

Applicant: 株式会社瑞萨科技

Inventor： 佐藤幸弘 , 宇野友彰 , 松浦伸悌 , 白石正树

IPC: H01L25/00 , H01L23/495 , H02M3/155

CPC classification number: H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754

Abstract: 本发明提供了一种具有这样一个电路的非绝缘型DC-DC转换器，在该电路中用于高压侧开关的功率MOS·FET和用于低压侧开关的功率MOS·FET串联连接。在非绝缘型DC-DC转换器中，用于高压侧开关的功率晶体管、用于低压侧开关的功率晶体管和驱动这些功率晶体管的驱动电路分别由不同的半导体芯片构成。这三个半导体芯片被容纳在一个封装中，并且包括用于高压侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被彼此邻近地布置。

4.

发明公开
半导体器件无效

公开(公告)号：CN101373764A

公开(公告)日：2009-02-25

申请号：CN200810169610.9

申请日：2005-01-14

Applicant: 株式会社瑞萨科技

Inventor： 宇野友彰 , 白石正树 , 松浦伸悌 , 佐藤幸弘

IPC: H01L25/16 , H01L23/488 , H01L23/31 , H02M3/155

CPC classification number: H01L25/165 , H01L24/37 , H01L24/40 , H01L24/41 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40245 , H01L2224/4103 , H01L2224/48091 , H01L2224/48472 , H01L2224/49111 , H01L2224/49431 , H01L2224/49433 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2924/01019 , H01L2924/01079 , H01L2924/12032 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H02M3/1588 , H03K17/6871 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2924/00014

Abstract: 本发明提供了一种半导体器件。在包括串联连接的高端开关功率MOSFET和低端开关功率MOSFET的非隔离DC－DC转换器中，在一个半导体芯片之中形成高端开关功率MOSFET和用于驱动高端和低端开关功率MOSFET的驱动器电路，而在另一个半导体芯片中形成低端开关功率MOSFET。在一个单一封装中密封两个半导体芯片。本发明提高了半导体器件的电压转换效率。