-
公开(公告)号：CN101290930B
公开(公告)日：2010-09-29
申请号：CN200810109299.9
申请日：2008-04-18
Applicant: 英飞凌科技股份公司
IPC: H01L25/00 , H01L25/07 , H01L25/065 , H01L25/16 , H01L25/18 , H01L23/48 , H01L23/488 , H01L21/50 , H01L21/60 , H01L21/78
CPC classification number: H01L23/49548 , H01L23/3107 , H01L23/49531 , H01L23/49575 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L25/0657 , H01L25/074 , H01L25/162 , H01L25/18 , H01L25/50 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/49109 , H01L2224/4911 , H01L2224/73265 , H01L2224/83801 , H01L2224/8381 , H01L2224/83825 , H01L2224/83851 , H01L2224/85 , H01L2224/92 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06572 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2224/78 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
Abstract: 包含半导体芯片叠层的半导体器件及其制造方法。本发明涉及包含半导体芯片叠层(1)的半导体器件(10)及其制造方法。半导体器件(10)包括作为半导体芯片叠层(1)的基底的至少一个下部半导体芯片(2)和至少一个上部半导体芯片(3)。绝缘中间片(4)设置在半导体芯片(2，3)之间。此外，连接元件(6)用线将半导体芯片(2，3)、中间片(4)和外部端子(7)彼此连接。
-
公开(公告)号：CN101091245A
公开(公告)日：2007-12-19
申请号：CN200580032910.7
申请日：2005-09-28
Applicant: 英飞凌科技股份公司
IPC: H01L23/31 , H01L23/495
CPC classification number: H01L23/3142 , B82Y10/00 , H01L23/49586 , H01L24/48 , H01L2224/05599 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01055 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/351 , Y10S977/742 , Y10S977/785 , Y10S977/831 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
Abstract: 本发明涉及在半导体器件(10)中不同部件(5，6)界面(2)间的层(1)、及其制造方法。为了这个目的，一部件(5)具有电路载体(11)的表面(3)作为界面(2)，并且另一部件(6)具有塑料封装模塑料(9)的接触表面(4)作为界面(2)。在这种情况下该粘附促进层(1)是聚合链分子和碳纳米管混合物。
-
公开(公告)号：CN101091245B
公开(公告)日：2010-06-16
申请号：CN200580032910.7
申请日：2005-09-28
Applicant: 英飞凌科技股份公司
IPC: H01L23/31 , H01L23/495
CPC classification number: H01L23/3142 , B82Y10/00 , H01L23/49586 , H01L24/48 , H01L2224/05599 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01055 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/351 , Y10S977/742 , Y10S977/785 , Y10S977/831 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
Abstract: 本发明涉及在半导体器件(10)中不同部件(5，6)界面(2)间的层(1)、及其制造方法。为了这个目的，一部件(5)具有电路载体(11)的表面(3)作为界面(2)，并且另一部件(6)具有塑料封装模塑料(9)的接触表面(4)作为界面(2)。在这种情况下该粘附促进层(1)是聚合链分子和碳纳米管混合物。
-
公开(公告)号：CN101290930A
公开(公告)日：2008-10-22
申请号：CN200810109299.9
申请日：2008-04-18
Applicant: 英飞凌科技股份公司
IPC: H01L25/00 , H01L25/07 , H01L25/065 , H01L25/16 , H01L25/18 , H01L23/48 , H01L23/488 , H01L21/50 , H01L21/60 , H01L21/78
CPC classification number: H01L23/49548 , H01L23/3107 , H01L23/49531 , H01L23/49575 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L25/0657 , H01L25/074 , H01L25/162 , H01L25/18 , H01L25/50 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/49109 , H01L2224/4911 , H01L2224/73265 , H01L2224/83801 , H01L2224/8381 , H01L2224/83825 , H01L2224/83851 , H01L2224/85 , H01L2224/92 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06572 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2224/78 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
Abstract: 包含半导体芯片叠层的半导体器件及其制造方法。本发明涉及包含半导体芯片叠层(1)的半导体器件(10)及其制造方法。半导体器件(10)包括作为半导体芯片叠层(1)的基底的至少一个下部半导体芯片(2)和至少一个上部半导体芯片(3)。绝缘中间片(4)设置在半导体芯片(2，3)之间。此外，连接元件(6)用线将半导体芯片(2，3)、中间片(4)和外部端子(7)彼此连接。
-
-
-
Search Results
4
records
(took 0.03 seconds)
