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公开(公告)号：KR101413165B1
公开(公告)日：2014-07-01
申请号：KR1020120114629
申请日：2012-10-16
Applicant: 강릉원주대학교산학협력단
Abstract: 본 발명은 이산화티타늄를 대체할 수 있으면서 공정상 빠르고 안전한 우수한 물성을 갖는 반도체 화합물의 제조방법 및 그 제조물질을 구현하기 위하여, 이산화티타늄, 카드뮴전구체, 3-메르캅토프로피온산 및 물을 혼합한 혼합용액을 제공하는 단계 및 혼합용액에 마이크로웨이브를 조사하여 이산화티타늄과 황화카드뮴이 결합된 반도체 화합물을 형성하는 단계를 포함하는 반도체 화합물의 제조방법을 제공한다.
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公开(公告)号：KR1020140049159A
公开(公告)日：2014-04-25
申请号：KR1020120114629
申请日：2012-10-16
Applicant: 강릉원주대학교산학협력단
Abstract: In order to realize a method for manufacturing a semiconductor compound which can replace titanium dioxide and has superior physical properties rapidly and safely obtained in operational processes, and a material manufactured thereby, the present invention provides the method for manufacturing the semiconductor compound. The method includes a step of providing a mixed solution of titanium dioxide, a cadmium precursor, 3-mercaptopropionic acid, and water and a step of forming a semiconductor compound combined with titanium dioxide and cadmium sulfide by irradiating the mixed solution with microwaves. [Reference numerals] (S100) Step of providing a titanium dioxide aqueous solution; (S200) Step of forming a cadmium dithiol complex; (S300) Step of manufacturing a mixed solution between the cadmium dithiol complex and the titanium dioxide aqueous solution; (S400) Step of irradiating the mixed solution with microwaves; (S500) Step of obtaining and drying determined nanocrystal in which cadmium sulfide and titanium dioxide are combined
Abstract translation: 为了实现可以替代二氧化钛并且在操作过程中快速安全地获得的物理性能优异的半导体化合物的制造方法以及由此制造的材料，本发明提供了半导体化合物的制造方法。 该方法包括提供二氧化钛，镉前体，3-巯基丙酸和水的混合溶液的步骤，以及通过用微波照射混合溶液形成与二氧化钛和硫化镉组合的半导体化合物的步骤。 （附图标记）（S100）提供二氧化钛水溶液的步骤; （S200）形成镉二硫醇复合物的工序; （S300）在二硫化镉复合物和二氧化钛水溶液之间制造混合溶液的工序; （S400）用微波照射混合溶液的步骤; （S500）合并硫化镉和二氧化钛的确定的纳米晶体的获得和干燥步骤
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