公开(公告)号：KR100847741B1

公开(公告)日：2008-07-23

申请号：KR1020070017618

申请日：2007-02-21

Applicant: 고려대학교 산학협력단

Inventor： 옥영우 ,  김동환 ,  송진수 ,  윤경훈 ,  이정철 ,  김상균

IPC: H01L31/072 ,  H01L31/04

CPC classification number: Y02E10/50 ,  H01L31/072 ,  H01L31/04

Abstract: A point-contact heterojunction silicon solar cell having a passivation layer on a p-n junction interface is provided to reduce an interfacial defect by minimizing a contact area between amorphous silicon and crystalline silicon. A passivation layer(305) is formed on an interface between a crystalline silicon wafer(300) of a first type and an amorphous silicon layer(310) of a second type wherein a plurality of voids penetrating the front and back surfaces of the passivation layer are formed in the passivation layer. The crystalline silicon wafer of the first type comes in contact with the amorphous silicon layer of the second type only by the voids. The passivation layer can be selected from SiO2, SiC, SiNx and intrinsic amorphous silicon.

Abstract translation: 提供了在p-n结界面上具有钝化层的点接触异质结硅太阳能电池，以通过最小化非晶硅和晶体硅之间的接触面积来减少界面缺陷。 在第一类型的晶体硅晶片（300）和第二类型的非晶硅层（310）之间的界面上形成钝化层（305），其中穿过钝化层的前表面和后表面的多个空隙 形成在钝化层中。 第一类型的晶体硅晶片仅通过空隙与第二类型的非晶硅层接触。 钝化层可以选自SiO 2，SiC，SiN x和本征非晶硅。