公开(公告)号：KR1020100022859A

公开(公告)日：2010-03-03

申请号：KR1020080081568

申请日：2008-08-20

Applicant: 고려대학교 산학협력단

Inventor： 이헌 ,  양기연 ,  윤경민 ,  한강수

IPC: H01L31/04 ,  B82Y40/00 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/1884

Abstract: PURPOSE: A highly efficient photovoltaic and a method for fabricating the same using direct nano-patterning of Zno are provided to increase a junction region of a p-n junction. CONSTITUTION: A solar cell comprises a transparent substrate(200), a TCO layer(220), a ZnO nano pattern(230), a p type semiconductor layer(250), and a metal electrode(260). The TCO layer is formed on the transparent substrate. The ZnO nano pattern is directly patterned with a siloxane series mold for nanoimprint or the polymer hot embossed mold. The ZnO nano pattern is directly patterned on the TCO layer. The p type semiconductor layer is formed on the ZnO nano pattern. The metal electrode is respectively connected to the p type semiconductor layer and a ZnO nano pattern.

Abstract translation: 目的：提供一种高效光伏及其制造方法，该方法使用Zno的直接纳米图案化以增加p-n结的结区域。 构成：太阳能电池包括透明基板（200），TCO层（220），ZnO纳米图案（230），p型半导体层（250）和金属电极（260）。 TCO层形成在透明基板上。 ZnO纳米图案用纳米压印的硅氧烷系列模具或聚合物热压花模具直接图案化。 ZnO纳米图案直接在TCO层上图案化。 在ZnO纳米图案上形成p型半导体层。 金属电极分别连接到p型半导体层和ZnO纳米图案。

公开(公告)号：KR101076520B1

公开(公告)日：2011-10-24

申请号：KR1020090051865

申请日：2009-06-11

Applicant: 고려대학교 산학협력단

Inventor： 이헌 ,  윤경민 ,  양기연 ,  변경재

IPC: H01L21/027 ,  B82B3/00

Abstract: 본발명에따른광전자소자제조방법은 (a) 투명기판상에, 상기투명기판과의굴절률차이가 0.4 이내인전구체를포함하는졸 솔루션(sol solution)을도포하는단계; (b) 표면에나노패턴이형성된스탬프를이용하여, 나노임프린트리소그래피(nano imprint lithography)법으로상기스탬프에형성된패턴을상기투명기판상의졸 솔루션에전사하면서, 상기졸 솔루션을겔 솔루션(gel)으로변화시키는단계; 및 (c) 상기겔 솔루션을어닐링(annealing)하여다결정(poly-crystal) 광산란층을형성하는단계;를포함하는것을특징으로한다.

公开(公告)号：KR1020100133136A

公开(公告)日：2010-12-21

申请号：KR1020090051865

申请日：2009-06-11

Applicant: 고려대학교 산학협력단

Inventor： 이헌 ,  윤경민 ,  양기연 ,  변경재

IPC: H01L21/027 ,  B82B3/00

CPC classification number: G03F7/0002 ,  B29C59/022 ,  B82Y40/00 ,  H01L31/042

Abstract: PURPOSE: A fabrication method of a photoelectric device using a nano imprint lithography process is provided to form a light scattering layer having a nano-pattern on the surface of the photoelectric device by performing a nano imprint lithography process. CONSTITUTION: A sol solution including a precursor having the difference of refractive index of 0.4 from a transparent substrate and is coated on the transparent substrate(S110). A gel solution is annealed to form light scattering layer of poly-crystal(S130). A stamp having a nano-pattern and the sol solution are aligned on the transparent substrate. The stamp and transparent substrate are separated from each other.

Abstract translation: 目的：提供使用纳米压印光刻工艺的光电装置的制造方法，通过进行纳米压印光刻工艺在光电装置的表面上形成具有纳米图案的光散射层。 构成：一种溶胶溶液，其包含与透明基板的折射率差为0.4的前体，并涂布在透明基板上（S110）。 将凝胶溶液退火以形成多晶硅的光散射层（S130）。 具有纳米图案的印模和溶胶溶液在透明基板上排列。 印模和透明基板彼此分离。