탄소나노튜브 후막의 제조방법, 그를 이용한 전계방출형표시소자
    1.
    发明公开
    탄소나노튜브 후막의 제조방법, 그를 이용한 전계방출형표시소자 无效
    生产碳纳米管膜,使用相同的场发射显示

    公开(公告)号:KR1020070108829A

    公开(公告)日:2007-11-13

    申请号:KR1020070044748

    申请日:2007-05-08

    CPC classification number: H01J9/12 H01J1/30 H01J1/304

    Abstract: A manufacturing method of carbon nanotube thick membrane by controlling calcination conditions while excluding surface treatment process and a field emission display using the method are provided to increase field emission and to complete carbon nanotube sharply. A manufacturing method of carbon nanotube thick membrane comprises steps of: (a) preparing carbon nanotube paste containing carbon nanotube, organic binder, organic solvent and inorganic powder or filler of low-melting point metal powder; (b) forming thick membrane on the electrode of the substrate by screen-printing or inkjet-printing the carbon nanotube; (c) after subjecting the substrate inside the heat-treatment equipment, heat-treating the substrate for removing organic solvent; and (d) furnishing air and inert gas in the ratio from 2:8 to 8:2 with the substrate which is out of organic solvent, and calcinating the substrate at the temperature of 350-500deg.C. In step (a), the organic binder is selected from a group consisting of ethylcellulose, acrylic resin and mixture thereof, the organic solvent is selected from a group consisting of terpineol, butyl carbitol acetate and mixture thereof, and the filler is selected from a group consisting of glass frit, indium tin oxide, indium dioxide, tin dioxide, zinc oxide, sliver, lead, zinc, tin and magnesium. The substrate in step (b) is glass or ceramic, and the electrode is selected from a group consisting of tin oxide, gold, silver, copper and aluminium. The temperature for removing the organic solvent in step (c) is 100-150deg.C. The inert gas in step (d) is nitrogen, and the ratio of air to the inert gas is 5:5 by volume. The calcination temperature in step (d) is 400deg.C, and the air and inert gas is supplied in the amount of 10-20LPM by using flow-controlling equipment. The carbon nanotube paste optionally comprises a catalyst selected from a group consisting of Pt, Co, Mn, Zn, Ti and Ni in the amount of 0.1-3% by weight.

    Abstract translation: 提供了通过控制煅烧条件同时排除表面处理工艺和使用该方法的场致发射显示的碳纳米管厚膜的制造方法,以增加场致发射并显着地完成碳纳米管。 碳纳米管厚膜的制造方法包括以下步骤:(a)制备含有碳纳米管,有机粘合剂,有机溶剂和低熔点金属粉末的无机粉末或填料的碳纳米管糊料; (b)通过丝网印刷或喷墨印刷碳纳米管在基板的电极上形成厚膜; (c)在热处理设备内对基板进行处理后,对基板进行热处理以去除有机溶剂; 和(d)以2:8至8:2的比例提供空气和惰性气体与脱离有机溶剂的基质,并在350-500℃的温度下煅烧该基材。 在步骤(a)中,有机粘合剂选自乙基纤维素,丙烯酸树脂及其混合物,有机溶剂选自萜品醇,丁基卡必醇乙酸酯及其混合物,填料选自 由玻璃料,氧化铟锡,二氧化铟,二氧化锡,氧化锌,银,铅,锌,锡和镁组成的组。 步骤(b)中的基材是玻璃或陶瓷,电极选自氧化锡,金,银,铜和铝。 步骤(c)中除去有机溶剂的温度为100-150℃。 步骤(d)中的惰性气体为氮气,空气与惰性气体的比例为5:5。 步骤(d)中的煅烧温度为400℃,使用流量控制设备供给10-20LPM的空气和惰性气体。 碳纳米管糊料任选地包含0.1-3重量%的选自Pt,Co,Mn,Zn,Ti和Ni的催化剂。

    탄소나노튜브 화학센서 및 그 제조방법
    2.
    发明授权
    탄소나노튜브 화학센서 및 그 제조방법 有权
    碳纳米管化学传感器及其制造方法

    公开(公告)号:KR100869372B1

    公开(公告)日:2008-11-19

    申请号:KR1020060044715

    申请日:2006-05-18

    Abstract: 탄소나노튜브 화학센서가 제공된다.
    본 발명에 따른 탄소나노튜브 화학센서는 기판; 및 Ag, ITO, In, Sn 및 Pb로 이루어진 군에서 선택된 어느 하나의 금속 분말, 탄소나노튜브 및 유기 바인더를 포함하는 탄소나노튜브 페이스트를 소결하여 형성된 감지막 일체형 전극을 포함하는 것을 특징으로 하며, 간단한 구조를 가지기 때문에 제조가 용이하고 감도가 뛰어나며, 본 발명에 따른 탄소나노튜브 화학센서의 제조방법은 제조공정이 간단하기 때문 제조단가를 절감할 수 있으므로 다양한 응용분야에 사용될 수 있다.

    탄소나노튜브 화학센서 및 그 제조방법
    3.
    发明公开
    탄소나노튜브 화학센서 및 그 제조방법 有权
    碳纳米管化学传感器及其制造方法

    公开(公告)号:KR1020070111649A

    公开(公告)日:2007-11-22

    申请号:KR1020060044715

    申请日:2006-05-18

    Abstract: A carbon nanotube chemical sensor and a method for preparing the carbon nanotube chemical sensor are provided to make a manufacture easy due to simply structure and improve sensitivity, thereby reducing a manufacturing cost. A carbon nanotube chemical sensor comprises an electrode/sensing layer formed by sintering a carbon nanotube paste comprising any one metal powder selected from the group consisting of Ag, ITO, In, Sn and Pb, 5-15 wt% of a carbon nanotube, and an organic binder. Preferably the electrode/sensing layer has a resistance of 0.5 Ohm or less and a thickness of 5-15 micrometers. Preferably the sintering is carried out at a temperature of 350-450 deg.C for 20-40 min.

    Abstract translation: 提供碳纳米管化学传感器和制备碳纳米管化学传感器的方法,由于简单的结构和灵敏度的提高使得制造变得容易,从而降低制造成本。 碳纳米管化学传感器包括通过烧结碳纳米管糊料形成的电极/感测层,所述碳纳米管膏料包含选自Ag,ITO,In,Sn和Pb中的任何一种金属粉末,5-15重量%的碳纳米管,以及 有机粘合剂。 优选地,电极/感测层具有0.5欧姆或更小的电阻和5-15微米的厚度。 优选地,烧结在350-450℃的温度下进行20-40分钟。

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