-
公开(公告)号：KR1020000061747A
公开(公告)日：2000-10-25
申请号：KR1019990011032
申请日：1999-03-30
Applicant: 광주과학기술원
Abstract: PURPOSE: A method of fabricating a white light emitting diode is to increase an emitting efficiency, and reduce a device manufacturing process. CONSTITUTION: A white light emitting diode basic structure comprises an active layer of an n-type GaN and InGaN, and a p-type GaN. A white light emitting diode manufacturing method comprises the steps of: phase separating an InGaN thin film by regulating a grow condition; and performing a high temperature rapid heat treatment. Thereby, the white light emitting diode has the InGaN thin film emitting white lights as a single active layer. The InGaN thin film is grown at thickness of 2 to 300 nm under a temperature of 450 to 850 deg. C by using a CVD method or a MBE method. Also, the InGaN thin film is rapidly heat-treated under a N2 or a NH3 atmosphere and a temperature of 700 to 1,050 deg. C for 0.1 to 10 minutes. The InGaN thin film has InGaN/ Inx Aly Ga1-x-y N (x,y: from 0 to 1) multi-quantum wells.
Abstract translation: 目的：制造白色发光二极管的方法是提高发光效率，并减少器件制造过程。 构成：白色发光二极管基本结构包括n型GaN和InGaN的有源层和p型GaN。 白色发光二极管制造方法包括以下步骤：通过调节生长条件来相分离InGaN薄膜; 并进行高温快速热处理。 因此，白色发光二极管具有作为单个有源层发射白光的InGaN薄膜。 InGaN薄膜在450〜850℃的温度下生长2〜300nm的厚度。 通过使用CVD法或MBE法。 此外，InGaN薄膜在N 2或NH 3气氛和700至1050℃的温度下快速热处理。 0.1至10分钟。 InGaN薄膜具有InGaN / In x Al y Ga 1-x-y N（x，y：0至1）多量子阱。
-
公开(公告)号：KR1020020020007A
公开(公告)日：2002-03-14
申请号：KR1020000052809
申请日：2000-09-06
Applicant: 광주과학기술원
IPC: H01M4/04
Abstract: PURPOSE: A method for preparing an anode for a thin film battery using a buffer layer is provided, to reduce the cracking due to the increase of thickness of a crystalline anode and to improve the capacity of a battery. CONSTITUTION: The method comprises the steps of forming a buffer layer(4) on a substrate(1); and forming a crystalline anode(5) on the buffer layer(4). Preferably the buffer layer and the crystalline anode are prepared by sputtering to allow the temperature of a substrate to be changed. The buffer layer is grown at a temperature of a room temperature to 500 deg.C; and by the thickness of 5 Angstrom to 1 micrometers per 1-60 min. The crystalline anode is grown at a temperature of 400-900 deg.C.
Abstract translation: 目的：提供一种使用缓冲层制备用于薄膜电池的阳极的方法，以减少由结晶阳极的厚度增加引起的开裂，并提高电池的容量。 构成：该方法包括在衬底（1）上形成缓冲层（4）的步骤; 以及在所述缓冲层（4）上形成结晶阳极（5）。 优选地，通过溅射来制备缓冲层和结晶阳极以允许改变衬底的温度。 缓冲层在室温至500℃的温度下生长; 并且每1-60分钟的厚度为5埃至1微米。 结晶阳极在400-900℃的温度下生长。
-
公开(公告)号：KR1020010048266A
公开(公告)日：2001-06-15
申请号：KR1019990052898
申请日：1999-11-26
Applicant: 광주과학기술원
IPC: B32B37/00
Abstract: PURPOSE: Provided is a high quality indium gallium nitride/gallium nitride multiple quantum well structure having improved photoluminescence, which can be applied effectively to a light emitting diode. CONSTITUTION: The indium gallium nitride/gallium nitride multiple quantum well structure is produced by forming an indium gallium nitride-based well (Ga(1-p-q)In(p)As(q)N) and a gallium nitride-based barrier (Ga(1-x-y)In(xAlyN) in turn, wherein the surface of the well is treated by gas selected from the group consisting of hydrogen, methane, and chlorine. In the formula, p and q are more than 0 and less than 1, wherein the total of p and q is less than 1, x and y are more than 0 and less than 1, wherein the total of x and y is less than 1.
Abstract translation: 目的：提供具有改进的光致发光的高品质氮化铟镓/氮化镓多量子阱结构，其可以有效地应用于发光二极管。 构成：通过形成氮化铟镓系阱（Ga（1-pq）In（p）As（q）N）和氮化镓系势垒（Ga （1-xy）In（xAlyN），其中孔的表面由选自氢，甲烷和氯的气体处理，在该式中，p和q大于0且小于1 其中p和q的总和小于1，x和y大于0且小于1，其中x和y的总和小于1。
-
公开(公告)号：KR100379244B1
公开(公告)日：2003-04-08
申请号：KR1020000052809
申请日：2000-09-06
Applicant: 광주과학기술원
IPC: H01M4/04
Abstract: 본 발명은 기판의 온도를 변화시킬 수 있는 스퍼터링(sputtering) 방법으로 박막전지를 제조하는 방법에 있어서,
완충층(buffer layer)과 결정질 양극물질로 이루어진 양극 구조를 제조하는 것을 특징으로 박막전지의 제조방법이 제공된다.
이러한 본 발명에 따르면 기존의 결정질 양극물질의 두께 증가에 따른 균열(cracking) 등의 문제점을 해결 할 수 있으며, 이로부터 고 용량(capacity)을 지닌 박막전지의 제조가 가능하게 된다.Abstract translation: 目的：提供一种使用缓冲层制备用于薄膜电池的阳极的方法，以减少由于结晶阳极的厚度增加而导致的裂缝并改善电池的容量。 构成：该方法包括在衬底（1）上形成缓冲层（4）的步骤; 和在缓冲层（4）上形成结晶阳极（5）。 优选通过溅射来制备缓冲层和结晶阳极以允许改变衬底的温度。 缓冲层在室温至500℃的温度下生长; 并且每1-60分钟厚度为5埃至1微米。 结晶阳极在400-900℃的温度下生长。
-
Patent Agency Ranking
公开(公告)号：KR100382104B1
公开(公告)日：2003-05-09
申请号：KR1020010033393
申请日：2001-06-14
Applicant: 광주과학기술원
Abstract: 본 발명은 수용성 금속 염화물을 사용한 이차전지용 나노입자 전극물질의 제조방법에 관한 것으로, 수용액 중에서, 금속 염화물 또는 이의 수화물을 약 환원제로 환원시킨 다음 가수분해하여 콜로이드 상의 금속 산화물을 생성하거나, 또는 금속 염화물 또는 이의 수화물을 강 환원제로 환원시켜 콜로이드 상의 금속 입자를 생성하는 것을 포함하는, 본 발명의 방법에 의해 제조된 금속/금속 산화물 전극물질은, 리튬 이온 이차전지의 전극에 사용되어 전지의 고효율, 고율(high rate) 및 사이클 특성을 효율적으로 향상시킬 수 있다.
Abstract translation: 目的：提供一种用于制备用于二次电池的纳米粒子电极材料的方法和由该方法制备的用于二次电池的纳米粒子电极材料，以提高电池的效率，速率和循环特性。 构成：该方法包括用弱还原剂还原水溶液中的金属氯化物或其水合物的步骤; 水解还原的金属以制备胶体金属氧化物; 并冻干金属氧化物。 弱还原剂选自NaHSO 3，Na 2 CO 3，NaOH，甲酸钠，硫代亚硫酸钠，硝基肼及其混合物。 该方法还包括用强还原剂还原水溶液中的金属氯化物或其水合物以制备胶态金属颗粒的步骤; 并冻干金属颗粒。 强还原剂是LiBH4或NaBH4。 优选地，分散到水中的炭黑粉末在还原之前加入到金属氯化物或其水合物中。
-
公开(公告)号：KR1020020095291A
公开(公告)日：2002-12-26
申请号：KR1020010033393
申请日：2001-06-14
Applicant: 광주과학기술원
Abstract: PURPOSE: A method for preparing a nanoparticle electrode material for a secondary battery and a nanoparticle electrode material for a secondary battery prepared by the method are provided to improve the efficiency, the rate and the cycle characteristic of a battery. CONSTITUTION: The method comprises the steps of reducing a metal chloride or its hydrate in an aqueous solution with a weak reducing agent; hydrolyzing the reduced one to prepare a colloidal metal oxide; and lyophilizing the metal oxide. The weak reducing agent is selected from the group consisting of NaHSO3, Na2CO3, NaOH, sodium formate, sodium thiosulfite, nitrohydrazine and their mixtures. Also the method comprises the steps of reducing a metal chloride or its hydrate in an aqueous solution with a strong reducing agent to prepare a colloidal metal particle; and lyophilizing the metal particle. The strong reducing agent is LiBH4 or NaBH4. Preferably the carbon black powder dispersed into water added to the metal chloride or its hydrate before it is reduced.
Abstract translation: 目的：提供一种制备用于二次电池的纳米颗粒电极材料和通过该方法制备的用于二次电池的纳米颗粒电极材料的方法，以提高电池的效率，速率和循环特性。 方案：该方法包括用弱还原剂还原金属氯化物或其水溶液在水溶液中的步骤; 水解还原剂以制备胶体金属氧化物; 并将金属氧化物冻干。 弱还原剂选自NaHSO 3，Na 2 CO 3，NaOH，甲酸钠，硫代硫酸钠，硝基肼及其混合物。 此外，该方法包括以强还原剂还原金属氯化物或水合物的水溶液以制备胶体金属颗粒的步骤; 并将金属颗粒冻干。 强还原剂是LiBH4或NaBH4。 优选分散在水中的炭黑粉末在减少之前加入到金属氯化物或其水合物中。
-
公开(公告)号：KR100342013B1
公开(公告)日：2002-06-27
申请号：KR1019990052898
申请日：1999-11-26
Applicant: 광주과학기술원
IPC: B32B37/00
Abstract: 본발명은다중양자우물구조층의제조방법에관한것으로, 질화인듐갈륨계우물층및 질화갈륨계장벽층이교대로형성되어있는다중양자우물구조층의제조방법에있어서, 상기질화갈륨계장벽형성에앞서서상기질화인듐갈륨계우물층의표면을수소, 메탄및 염소로이루어진군으로부터선택된기체로처리하는것을특징으로하는본 발명의방법에따르면, 고품질의계면을지니고발광특성이획기적으로향상된다중양자우물구조를제조할수 있으며, 발광다이오드에효과적으로적용할수 있다.
-
公开(公告)号：KR100312019B1
公开(公告)日：2001-11-03
申请号：KR1019990011032
申请日：1999-03-30
Applicant: 광주과학기술원
Abstract: 본발명은삼원계화합물반도체인질화인듐갈륨(InGaN)의물질고유의특성인스피노달분해특성과고온급속열처리과정을이용하여백색발광을하는질화인듐갈륨박막을단일활성층으로갖는백색발광다이오드(White Light Emitting Diode: White LED)의제조방법에관한것이다. 사파이어기판위에성장된 n-형질화갈륨(GaN) 위에질화인듐갈륨박막성장시성장조건을조절하여자주색에서파란색영역에이르는발광특성을내는상과녹색에서적색영역에이르는발광특성을내는상을형성시킨후 고온급속열처리를통하여박막표면을열적으로평탄하게하고인듐(In) 함량이적은상의발광특성을향상시켜전체적으로밝은백색발광특성을갖는질화인듐갈륨단일활성층을제조하였다. 본발명의발광다이오드는백색으로발광하는질화인듐갈륨박막을단일활성층으로하는단일칩 상태의질화물반도체백색발광다이오드로서발광이효율적이고소자제조공정이획기적으로단축되는장점이있다.
-
公开(公告)号：KR1020000074844A
公开(公告)日：2000-12-15
申请号：KR1019990019065
申请日：1999-05-26
Applicant: 광주과학기술원
IPC: H01L33/06
Abstract: PURPOSE: A white light emitting diode using a quantum well structure including an InGaN active well is provided to greatly reduce a manufacturing process by not using phosphorous or high molecule material, and to increase a light emitting efficiency by using a quantum well structure. CONSTITUTION: A white light emitting diode comprises an n-type gallium nitride layer, a well, a composition of a quantum well structure having more than two elements and a p-type GaN layer. The well satisfies a chemical formula such as InxGa1-xN. The composition includes a barrier of a material selected from a group of GaN, AlGaN and InGaN satisfying a chemical formula such as InyGa1-yN. (X and y are greater than 0, and less than 1. Y is less than x)
Abstract translation: 目的：提供使用包括InGaN活性阱的量子阱结构的白色发光二极管，以通过不使用磷或高分子材料大大减少制造工艺，并通过使用量子阱结构来提高发光效率。 构成：白色发光二极管包括n型氮化镓层，阱，具有多于两个元素的量子阱结构的组合物和p型GaN层。 该阱满足InxGa1-xN等化学式。 该组合物包括选自满足诸如In y Ga 1-y N的化学式的GaN，AlGaN和InGaN的组的材料的势垒。 （X和Y大于0，小于1.Y小于x）
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.018 seconds)
