公开(公告)号：KR101426493B1

公开(公告)日：2014-08-05

申请号：KR1020130052290

申请日：2013-05-09

Applicant: 국민대학교산학협력단

Inventor： 임상규 ,  류일환 ,  권혜민

IPC: H01G11/48

Abstract: The present invention relates to a method for manufacturing conductive polymer hollow nanospheres for a pseudo-capacitor and, more specifically, to a method for manufacturing conductive polymer hollow nanospheres for a pseudo capacitor, comprising i) a step of polymerizing monomers of a conductive polymer on the surface and forming a conductive polymer by using polymer nanospheres as a mold under the presence of a dopant and oxidant; and ii) a step of removing the polymer nanospheres by using an organic solvent. According to the method for manufacturing conductive polymer hollow nanospheres for a pseudo-capacitor of the present invention, the surface area of the conductive polymer hollow nanosphere is maximized by preparing the conductive polymer in a hollow form and the conductive polymer hollow nanospheres are stacked in a multilayer structure, thereby increasing the capacitance of the conductive polymer hollow nanospheres. Also, the method enables mass production of the conductive polymer hollow nanospheres, thereby using the conductive polymer hollow nanospheres to a pseudo-capacitor.

Abstract translation: 本发明涉及一种制造用于伪电容器的导电聚合物中空纳米球的制造方法，更具体地说，涉及一种用于制造用于伪电容器的导电聚合物中空纳米球的方法，该方法包括：i）将导电聚合物的单体聚合的步骤 并在掺杂剂和氧化剂存在下通过使用聚合物纳米球作为模具形成导电聚合物; 和ii）通过使用有机溶剂除去聚合物纳米球的步骤。 根据本发明的假电容器用导电性聚合物中空纳米球的制造方法，通过制备中空形状的导电性聚合物，导电性高分子中空纳米球的表面积最大化，导电性高分子中空纳米球层叠 多层结构，从而增加导电聚合物中空纳米球的电容。 此外，该方法能够大量生产导电聚合物中空纳米球，从而将导电聚合物中空纳米球用于假电容器。