公开(公告)号：KR1020100055655A

公开(公告)日：2010-05-27

申请号：KR1020080114481

申请日：2008-11-18

Applicant: 국민대학교산학협력단

Inventor： 이재갑 ,  성명모 ,  조상호

IPC: H01L29/786

CPC classification number: H01L21/02554 ,  H01L29/7869

Abstract: PURPOSE: A method for manufacturing an N type ZnO semiconductor thin film and a thin film transistor are provided to reduce manufacturing costs by depositing an insulation layer below 150 degrees centigrade and forming a ZnO thin film below 100 degrees centigrade. CONSTITUTION: A substrate(10) is arranged inside a chamber of an atomic layer deposition device. A Zn precursor is inserted into the chamber independently or with the carrier gas. An atomic layer including Zn is formed by absorbing a Zn precursor with an atomic layer deposition method. A nitrogen precursor and an oxygen precursor are respectively inserted into the chamber. An N-type ZnO semiconductor thin film(40) doped with the nitrogen is formed using a surface chemical reaction among the Zn precursor, the nitrogen precursor, and the oxygen precursor.

Abstract translation: 目的：提供一种制造N型ZnO半导体薄膜和薄膜晶体管的方法，通过在150摄氏度下沉积绝缘层并在低于100摄氏度的温度下形成ZnO薄膜来降低制造成本。 构成：衬底（10）布置在原子层沉积装置的室内。 将Zn前体独立地或与载气一起插入腔室中。 通过用原子层沉积法吸收Zn前体形成包含Zn的原子层。 氮气前体和氧气前体分别插入腔室。 使用Zn前体，氮前体和氧前体之间的表面化学反应形成掺杂氮的N型ZnO半导体薄膜（40）。