公开(公告)号：KR101126981B1

公开(公告)日：2012-03-26

申请号：KR1020110077904

申请日：2011-08-04

Applicant: 국민대학교산학협력단

Inventor： 배학열 ,  허인석 ,  김동명 ,  김대환

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L29/78663

Abstract: PURPOSE: A method for extracting a parasitic serial resistance element of an amorphous thin film transistor is provided to separate and extract various resistance elements by using structural parameters of a TFT, a current-voltage property, and a capacitance-voltage property. CONSTITUTION: A capacitance between a gate and a source of an amorphous thin film transistor and a capacitance between the gate and a drain thereof are measured(S210). A vertical resistance element is extracted among parasitic serial resistance elements(S220). Each contact resistant element and each bulk resistance element are separated and extracted(S230). A current between the drain and the source of the amorphous thin film transistor is measured(S240). A serial resistance value is extracted based on the current between the drain and the source(S250). A horizontal resistance element is extracted among the parasitic serial resistance element(S260). A transmission resistance element and a channel resistance element are separated and extracted from the horizontal resistance element(S270).

Abstract translation: 目的：提供一种用于提取非晶薄膜晶体管的寄生串联电阻元件的方法，通过使用TFT的结构参数，电流 - 电压特性和电容 - 电压特性来分离和提取各种电阻元件。 结构：测量非晶薄膜晶体管的栅极和源极之间的电容以及栅极和漏极之间的电容（S210）。 在寄生串联电阻元件中提取垂直电阻元件（S220）。 每个接触电阻元件和每个体电阻元件被分离和提取（S230）。 测量非晶薄膜晶体管的漏极和源极之间的电流（S240）。 基于漏极和源极之间的电流提取串联电阻值（S250）。 在寄生串联电阻元件中提取水平电阻元件（S260）。 从水平电阻元件分离并提取传输电阻元件和沟道电阻元件（S270）。