公开(公告)号：KR101282884B1

公开(公告)日：2013-07-17

申请号：KR1020120028470

申请日：2012-03-20

Applicant: 국민대학교산학협력단 ,  광운대학교 산학협력단

Inventor： 민경식 ,  정철문

IPC: G11C7/22 ,  G11C7/10 ,  G11C5/14

CPC classification number: G11C7/109 ,  G11C7/1096 ,  G11C7/22 ,  G11C13/0002

Abstract: PURPOSE: Complementary memristor driving circuit and control method of the complementary memristor are provided to increase a size of array by minimizing sneak-path leakage current in case of reading operation. CONSTITUTION: Input data are received. First writing operation to a specific cell with respect to the received input data is performed (S32). Second writing operation to a specific cell with respect to the received input data after the first writing operation is performed (S42). The second writing operation is completed based on resistance variation of the specific cell (S70). The voltage applied in the second writing operation is greater than the voltage applied in the first writing operation. [Reference numerals] (AA) Start; (BB,DD,EE) No; (CC,FF,GG) Yes; (HH) End; (S20) Is an input '1' ?; (S32) First session first stage writing starts; (S34) Second session first stage writing starts; (S42,S44) Second stage writing starts; (S52,S54) The second stage writing works; (S62,S64) Is a reference voltage less than the voltage of a sensor node ?; (S70) The second stage writing ends

Abstract translation: 目的：提供互补忆阻器驱动电路和互补忆阻器的控制方法，以便在读取操作的情况下最大限度地减少潜行漏电流来增加阵列的尺寸。 构成：接收输入数据。 执行相对于接收的输入数据对特定单元的写入操作（S32）。 在执行第一次写入操作之后相对于所接收的输入数据对特定单元进行第二次写入操作（S42）。 基于特定单元的电阻变化完成第二写入操作（S70）。 在第二写入操作中施加的电压大于在第一写入操作中施加的电压。 （附图标记）（AA）开始; （BB，DD，EE）否; （CC，FF，GG）是; （HH）结束; （S20）是输入“1”吗？ （S32）第一课开始写作; （S34）第二课开始写作; （S42，S44）第二阶段写作开始; （S52，S54）第二阶段写作工作; （S62，S64）是比传感器节点的电压小的参考电压吗？ （S70）第二阶段写入结束