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公开(公告)号：KR102241805B1
公开(公告)日：2021-04-19
申请号：KR1020200154850
申请日：2020-11-18
Applicant: 국방과학연구소
Abstract: 본발명의일 실시예에따른복수의부배열을포함하는위상배열안테나의각 부배열간의이득과위상의편차를보정하는방법은, 평면형근접전계측정장치를이용하여상기위상배열안테나에대한근접전계를측정하여측정평면내의제1 근접전계데이터를획득하는단계; 상기제1 근접전계데이터에대하여측정위치에따라부배열단위로그룹핑하고, 상기그룹핑된데이터를기초로각 부배열별 대표이득및 대표위상을산출하는단계; 및상기대표이득및 상기대표위상을미리설정된기준값과비교하여서로다른부배열간의대표이득및 대표위상을보정하는제어데이터를생성하는단계를포함한다.
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Patent Agency Ranking
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公开(公告)号：KR1020000055243A
公开(公告)日：2000-09-05
申请号：KR1019990003764
申请日：1999-02-04
Applicant: 국방과학연구소
IPC: H01L29/868
Abstract: PURPOSE: A pin diode is to reduce a forward resistance by forming a n-typed Ohmic metal layer on an exposed side of a n-typed epitaxial layer and a substrate near the epitaxial layer. CONSTITUTION: A pin diode comprises a substrate(31) with a step being formed between a portion to be formed with the pin diode and the remainder portion, a n-typed epitaxial layer(32) formed on the substrate to be formed with the pin diode and having a trapezoidal cross section, a buffer layer(33), a p-typed epitaxial layer(34), a p-typed Ohmic metal layer(35) formed on the p-typed epitaxial layer, a n-typed Ohmic metal layer(38) formed on an exposed side of the n-typed epitaxial layer and the substrate near the epitaxial layer.
Abstract translation: 目的：pin二极管通过在n型外延层和外延层附近的衬底的暴露侧上形成n型欧姆金属层来减小正向电阻。 构造：一个pin二极管包括一个衬底（31），一个台阶形成在待形成的pin二极管的部分和其余部分之间，形成在衬底上的n型外延层（32）形成在管脚 二极管，具有梯形截面，缓冲层（33），p型外延层（34），形成在p型外延层上的p型欧姆金属层（35），n型欧姆金属 形成在n型外延层的暴露侧上的层（38）和在外延层附近的衬底。
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公开(公告)号：KR1020000042636A
公开(公告)日：2000-07-15
申请号：KR1019980058873
申请日：1998-12-26
Applicant: 국방과학연구소
IPC: H01L29/868
Abstract: PURPOSE: A structure of a pin diode and a method of manufacturing the same are to minimize the forward resistance by enhancing a surface area of an Ohmic metal layer to be formed on an upper portion of a n-typed layer of high density. CONSTITUTION: A pin diode comprises a semiconductor substrate(11) having a protrusion, a n-typed layer(12) formed on the protrusion of the substrate, a buffer layer(13), a p-typed layer(14), a n-typed layer(14) formed on a slanted surface of the protrusion and the substrate, Ohmic metal layers each formed the p-typed layer and the n-typed layer, air-bridge metal layers each contacted with a region of the Ohmic metal layer. The semiconductor substrate is made of a compound of Ga and As. The n-typed layer and p-typed layer are formed by an epitaxial growing layer.
Abstract translation: 目的：针二极管的结构及其制造方法是通过增加在高密度的n型层的上部形成的欧姆金属层的表面积来最小化正向电阻。 构造：pin二极管包括具有突起的半导体衬底（11），形成在衬底的突起上的n型层（12），缓冲层（13），p型层（14），n 形成在突起和基板的倾斜表面上的单层（14），每个形成p型层和n型层的欧姆金属层，各自与欧姆金属层的区域接触的空气桥金属层 。 半导体衬底由Ga和As的化合物制成。 n型层和p型层由外延生长层形成。
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