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公开(公告)号：KR101389394B1
公开(公告)日：2014-04-25
申请号：KR1020120100262
申请日：2012-09-11
Applicant: 국방과학연구소
Abstract: 본 발명의 적외선 센서 후면 연마 및 이를 위한 연마 방법은 와이어 본딩 패드(3, Wire Bonding Pad)를 갖춘 신호취득회로(2, Read-Out Integrated Circuit) 와 검출배열소자(1)가 결합되며, 검출배열소자(1)의 한쪽 면이 양자효율(QE; Quantum Efficiency)이 최적화되는 두께로 연마될 때, 검출배열소자(1)와 신호취득회로(2)의 4측면이 보조기판(20, Dummy Wafer)으로 에워싸인 상태에서 연마가 수행되고, 후면 연마 시 검출배열소자(1)에서 연마된 물질이 검출배열소자(1)의 주변에 배치된 보조 기판(20)으로 나가도록 유도함으로써 볼타입 결함(Ball type Defect)이 형성되지 않고, 또한 보조 기판(20)을 이용함으로써 투입된 화학물질에 의한 신호취득회로(2)의 와이어 본딩 패드(3)의 손상(Damage)도 방지되는 특징을 갖는다.
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公开(公告)号：KR1020140033849A
公开(公告)日：2014-03-19
申请号：KR1020120100262
申请日：2012-09-11
Applicant: 국방과학연구소
Abstract: In an infrared ray sensor rear surface polishing and a polishing method for the same, a wire bonding pad (3) having a read-out integrated circuit (2) is combined with a detection array element (1). When one surface of the detection array element (1) is polished at a thickness where quantum efficiency (QE) is optimized, polishing is performed in a state where the four sides of the detection array element (1) and the read-out integrated circuit (2) are surrounded by a dummy wafer (20). During rear surface polishing, materials polished in the detection array element (1) are induced to discharge to the dummy wafer placed around the detection array element (1) in order to prevent the occurrence of a ball type defect. In addition, the damage to the wire bonding pad (3) of the read-out integrated circuit (2) due to an injected chemical substance can be prevented by using the dummy wafer (20). [Reference numerals] (AA) Start; (S10) Polishing preparing process; (S100) polishing setting process; (S110) Prepare a polishing jig; (S120) Fixate an infrared ray sensor polishing module to the polishing jig; (S130) Is the fixating state good?; (S21) Detection array element; (S22) Signal obtaining circuit; (S23) Glass disc; (S24) Dummy wafer; (S30) Combine an infrared ray sensor; (S40) Attach the glass disc and inject wax; (S50) Attach the signal obtaining circuit dummy wafer; (S51) Does it agree with the thickness of the signal obtaining circuit?; (S60) Attach the detection array element dummy wafer; (S61) Is it a horizontal state with the detection array element?; (S62) Is a wire bonding pad covered with the detection array element dummy wafer?; (S70) Complete the infrared ray sensor polishing module
Abstract translation: 在红外线传感器后表面抛光及其抛光方法中，具有读出集成电路（2）的引线接合焊盘（3）与检测阵列元件（1）组合。 当以量子效率（QE）最优化的厚度抛光检测阵列元件（1）的一个表面时，在检测阵列元件（1）和读出的集成电路 （2）被虚设晶片（20）包围。 在后表面抛光中，在检测阵列元件（1）中抛光的材料被感应放电到放置在检测阵列元件（1）周围的虚设晶片，以防止发生球型缺陷。 此外，通过使用伪晶片（20），可以防止由于注入的化学物质导致的读出集成电路（2）的引线键合焊盘（3）的损坏。 （附图标记）（AA）开始; （S10）抛光准备工艺; （S100）抛光设定处理; （S110）准备抛光夹具; （S120）将红外线传感器研磨模块固定在研磨夹具上; （S130）固定状态好吗？ （S21）检测阵列元件; （S22）信号获取电路; （S23）玻璃盘; （S24）虚拟晶圆; （S30）组合红外线传感器; （S40）安装玻璃盘并注入蜡; （S50）安装信号获取电路虚拟晶片; （S51）是否符合信号获取电路的厚度？ （S60）安装检测阵列元件虚设晶片; （S61）检测数组元素是水平状态吗？ （S62）是用检测用阵列元件虚设晶片β覆盖的引线接合焊盘。 （S70）完成红外线传感器抛光模块
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