Abstract:
본 발명은 적외선 센서의 신호 검출 회로 및 그 회로의 보정방법에 관한 것으로, 본 적외선 센서의 신호 검출 회로는 적외선을 감지하여 신호 전류를 출력하는 볼로미터들이 N×M 형태로 배열된 셀 어레이; 복수 개의 바이어스 레벨에 대응되는 복수 개의 바이어스 전압을 출력하는 레벨 생성기; 상기 셀 어레이의 칼럼(Column) 방향에 위치하여 상기 각 볼로미터들에 각기 다른 바이어스 전압을 공급하는 N개의 저항 불균일 보정회로; 상기 셀 어레이의 로(Row) 방향에 위치하여 상기 각 볼로미터들에 각기 다른 바이어스 전압을 공급하는 M개의 저항 불균일 보정회로; 상기 셀 어레이의 저항 불균일도가 보정되도록 상기 각 저항 불균일 보정회로의 바이어스 전압 레벨을 설정하는 제어부; 및 상기 셀 어레이에서 출력된 상기 신호 전류를 적분하는 N개의 적분기를 포함하는 것을 특징으로 한다.
Abstract:
In an infrared ray sensor rear surface polishing and a polishing method for the same, a wire bonding pad (3) having a read-out integrated circuit (2) is combined with a detection array element (1). When one surface of the detection array element (1) is polished at a thickness where quantum efficiency (QE) is optimized, polishing is performed in a state where the four sides of the detection array element (1) and the read-out integrated circuit (2) are surrounded by a dummy wafer (20). During rear surface polishing, materials polished in the detection array element (1) are induced to discharge to the dummy wafer placed around the detection array element (1) in order to prevent the occurrence of a ball type defect. In addition, the damage to the wire bonding pad (3) of the read-out integrated circuit (2) due to an injected chemical substance can be prevented by using the dummy wafer (20). [Reference numerals] (AA) Start; (S10) Polishing preparing process; (S100) polishing setting process; (S110) Prepare a polishing jig; (S120) Fixate an infrared ray sensor polishing module to the polishing jig; (S130) Is the fixating state good?; (S21) Detection array element; (S22) Signal obtaining circuit; (S23) Glass disc; (S24) Dummy wafer; (S30) Combine an infrared ray sensor; (S40) Attach the glass disc and inject wax; (S50) Attach the signal obtaining circuit dummy wafer; (S51) Does it agree with the thickness of the signal obtaining circuit?; (S60) Attach the detection array element dummy wafer; (S61) Is it a horizontal state with the detection array element?; (S62) Is a wire bonding pad covered with the detection array element dummy wafer?; (S70) Complete the infrared ray sensor polishing module
Abstract:
PURPOSE: A signal detecting circuit of an infrared ray sensor and a collecting method thereof are provided to minimize a non-uniformity among pixels, to maximize a circuit dynamic range of a temperature of a micro-bolometer FPA(Focal Plane Array), and to obtain detecting characteristics by improving an amplification factor. CONSTITUTION: A signal detecting circuit of an infrared ray sensor comprises a cell array(120), a level generator(140), a resistance non-uniformity correction circuits(150) of N, a resistance non-uniformity correction circuits(125) of M, a controller(115), and an integrator. Bolometer outputting a signal current by detecting infrared rays is arranged in the cell array. The level generator outputs a plurality of bias voltages corresponding to a plurality of bias levels. The resistance non-uniformity correction circuits of N are arranged in a column direction of the cell array, thereby supplying the bias voltages different to each other to the each bolometer. The resistance non-uniformity correction circuits of M are arranged in a row direction of the cell array, thereby supplying the bias voltages different to each other to the each bolometer. The controller sets bias voltage levels of the each resistance non-uniformity correction circuits so that the resistance non-uniformity of the cell array is corrected. The integrator integrates the signal current outputted from the cell array.
Abstract:
본발명의적외선감지소자는, N 타입반도체; 상기 N 타입반도체위에적층되어상기 N 타입반도체와 PN 접합구조를형성하는 P 타입반도체; 상기 PN 접합구조위에형성되는자연산화막; 및 16족원소와 12족원소의이성분계물질로형성되고, 상기자연산화막위에증착되는표면보호막을포함한다. 본발명의적외선감지소자의제조방법은, (a) N 타입반도체위에 P 타입반도체를성장시켜 PN 접합구조를형성하는단계; (b) 상기 PN 접합구조의표면에형성된자연산화막을식각에의해제거하는단계; 및 (c) 상기자연산화막의제거후 다시형성된자연산화막위에, 16족원소와 12족원소의이성분계물질로형성되는표면보호막을증착하는단계를포함한다.
Abstract:
본 발명의 인듐안티모나이드(InSb)의 건식 식각 방법은 아르곤 가스와 질소 가스를 식각 가스로 사용하고, 상기 식각 가스를 플라즈마화하여 플라즈마 중의 이온 및 라디칼에 의해 식각하는 단계, 아르곤 가스를 사용하여 고속 식각 후, 아르곤과 질소 혼합 가스에 의해 추가 식각, 질소 가스를 사용하는 최종 식각 공정을 단계적으로 진행하는 것을 포함한다. 이로부터, 빠른 식각 속도와 함께 편평한 표면 거칠기와 낮은 결함발생을 나타내는 우수한 식각 특성을 갖는 인듐안티모나이드가 제공됨으로써, 중적외선 검출소자(Infrared photodetector) 및 초고속,저전력을 요구하는 반도체 소자(High speed & Low power consumption device) 등에 유용하게 사용되는 특징을 갖는다.
Abstract:
PURPOSE: A bolometer infrared sensor with improved uniformity of resistance between processes and a manufacturing method thereof are provided to avoid a change in the performance of a bolometer generated when the specific resistances of the infrared sensors are not identical by a deviation between sensors. CONSTITUTION: A bolometer infrared sensor with improved resistance uniformity between processes comprises a silicon substrate(510), a reflective plate(520), a metal support column(530), a first support layer(550), an absorbing layer(551), a temperature-sensitive resistor(540), a connection leg(542), and a second support layer(560). The silicon substrate includes a signal acquisition circuit. The reflective plate is formed on the silicon substrate and reflects infrared rays. The metal support column is formed on the reflective plate. The first support layer is connected to the metal support column and provides a structure thermally isolated. The absorbing layer is formed on the first support layer, thereby improving an absorption rate of the infrared rays becoming incident. The temperature-sensitive resistor is formed on the absorbing layer, and the resistance thereof is changed when temperature is changed by the infrared rays absorbed by the absorbing layer.