公开(公告)号：KR101378060B1

公开(公告)日：2014-03-27

申请号：KR1020130134144

申请日：2013-11-06

Applicant: 국방과학연구소

Inventor： 홍인표 ,  이복형 ,  임병옥 ,  최길웅

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7831

Abstract: The present specification relates to a high power transistor having a high power property without reducing a frequency property, and a fabrication method thereof. According to one embodiment of the present specification, the high power transistor includes a substrate; a first and a second epi layer which are formed on a substrate and separated from each other; a first source electrode and a first drain electrode which are formed on the first epi layer; a first gate electrode which is formed between the first source electrode and the first drain electrode; a second source electrode and a second drain electrode which is formed on the second epi layer; and a second gate electrode which is formed between the second source and the second drain electrode.

Abstract translation: 本说明书涉及具有高功率特性而不降低频率特性的高功率晶体管及其制造方法。 根据本说明书的一个实施例，高功率晶体管包括衬底; 第一和第二外延层，其形成在基板上并彼此分离; 形成在第一外延层上的第一源电极和第一漏电极; 形成在第一源极和第一漏极之间的第一栅极; 形成在第二外延层上的第二源电极和第二漏电极; 以及形成在第二源极和第二漏极之间的第二栅电极。