차세대 초고속 절삭가공용 다층코팅공구의 내구성향상을위한 코팅층 및 계면의 조직제어기술
    1.
    发明公开
    차세대 초고속 절삭가공용 다층코팅공구의 내구성향상을위한 코팅층 및 계면의 조직제어기술 无效
    涂层和接口的结构控制技术,用于提高下一代多层涂层工具对超高速切割的耐久性

    公开(公告)号:KR1020050022763A

    公开(公告)日:2005-03-08

    申请号:KR1020030060463

    申请日:2003-08-27

    Inventor: 신기삼

    CPC classification number: C23C14/547 B23B2228/10 C23C14/0641 G01N23/207

    Abstract: PURPOSE: To understand process of arc ion plating and structure and characteristics of a TiN film according to experimental conditions through X-ray analysis and study life and abrasion shape of coated tools enabling high speed cutting by coating thin films of TiN, TiAlN, TiC and Al2O3, wear resistant thin films, on cutting tools, thereby improving abrasion and friction characteristics of cutting tools. CONSTITUTION: The structure control technology of coating layer and interface for improving durability of next generation multilayer coated tools for ultra-high speed cutting is characterized in that it is the optimum coating process of a CrN coating layer, wherein CrN of surfaces (111), (200) and (220) is preferably grown as a bias voltage is increased when analyzing the thin film to a stepsize of 0.5 at a diffraction angle of 20 to 80 degrees after coating a thin film on a matrix; growth of CrN is predominant when voltage is increased; a broad peak of amorphous phase is displayed when the bias voltage is low, but crystal phase of the sharp peak is displayed when the bias voltage is high since a broad peak is shown when the bias voltage is low, and a sharp peak is shown when the bias voltage is increased; crystal structure of Cr2N is hexagonal, and crystal structure of CrN is cubic; and the coating layer is changed from amorphous to crystalline as the bias voltage is increased, and (111) and (200) surfaces are preferred orientation of the CrN coating layer.

    Abstract translation: 目的:通过X射线分析了解电弧离子电镀工艺及TiN薄膜的结构及其特性,研究涂层工具的使用寿命和磨损形状,通过涂覆TiN,TiAlN,TiC和 Al2O3,耐磨薄膜,切割工具,从而改善切削工具的磨损和摩擦特性。 构成:用于超高速切割的下一代多层涂层工具的耐久性的涂层结构控制技术和界面的特征在于其是CrN涂层的最佳涂层工艺,其中表面(111)的CrN, (200)和(220)优选地在将薄膜涂覆在基体上之后,在20〜80度的衍射角分析薄膜时的偏置电压增加时生长, 当电压增加时,CrN的生长是主要的; 当偏置电压低时,显示出非晶相的宽峰值,但是当偏置电压较高时显示尖锐峰值的晶体相,因此当偏置电压低时显示宽峰值,并且显示尖峰 偏置电压增加; Cr2N晶体结构为六方晶系,CrN晶体结构为立方晶; 并且随着偏压增加,涂层从非晶变为结晶,并且(111)和(200)表面是CrN涂层的优选取向。

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