公开(公告)号：KR101605918B1

公开(公告)日：2016-03-23

申请号：KR1020100131566

申请日：2010-12-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다도코로마사히데 ,  곤도요시히로 ,  사이토다카시

IPC: H01L21/027 ,  H01L21/66

CPC classification number: B05C21/00 ,  G03F7/20 ,  H05B3/20

Abstract: 본발명은웨이퍼의면내에서의선폭의변동을저감할수 있어, 소비전력을저감할수 있는열처리장치및 열처리방법을제공하는것을목적으로한다. 레지스트막이형성되어있는, 노광된기판(W)을, 현상처리하기전에열처리하는열처리장치(PEB)에서, 이차원적으로배열되어있는복수의가열소자(62)를구비하여, 노광된기판(W)을열처리하는가열부(60)와, 가열부(60)의위쪽에설치되어있는, 기판(W)이배치되는배치부(80)와, 가열부(60)에의해하나의기판(W)을열처리할때에, 미리가열부(60)에의해열처리된후, 현상처리되어레지스트패턴이형성된다른기판(W)에서의레지스트패턴의선폭의측정값(CD)으로부터구한온도보정값(ΔT)에기초하여, 가열부(60)의설정온도를보정하고, 보정된설정온도에기초하여, 가열부(60)를제어하는제어부(110)를갖는다.

公开(公告)号：KR1020110090755A

公开(公告)日：2011-08-10

申请号：KR1020100131566

申请日：2010-12-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다도코로마사히데 ,  곤도요시히로 ,  사이토다카시

IPC: H01L21/027 ,  H01L21/66

CPC classification number: B05C21/00 ,  G03F7/20 ,  H05B3/20 ,  H01L21/0274 ,  G03F7/202 ,  H01L22/12

Abstract: PURPOSE: A heat treatment apparatus, a coating and developing treatment system, a heat treatment method, a coating and developing treatment method, and a recording medium having recorded program for executing heat treatment are provided to reduce power consumption by reducing the variation of line width of a wafer side. CONSTITUTION: In a heat treatment apparatus, a coating and developing treatment system, a heat treatment method, a coating and developing treatment method, and a recording medium having recorded program for executing heat treatment, a substrate having a resist film is exposed, developed, and thermal processed to form a resist pattern in the substrate. The substrate has a plurality of heating elements which are arranged in two dimensional. A heating unit thermal-processes the exposed substrate. A controller(30) compensates the set temperature of the heating unit based on the measured line width of the resist pattern and controls the heating unit.

Abstract translation: 目的：提供一种热处理设备，涂覆和显影处理系统，热处理方法，涂覆和显影处理方法以及具有用于执行热处理的记录程序的记录介质，以通过减少线宽的变化来降低功耗 的晶片侧。 构成：在热处理装置，涂布显影处理系统，热处理方法，涂布和显影处理方法以及具有用于执行热处理的记录程序的记录介质中，具有抗蚀剂膜的基板被曝光，显影， 并进行热处理以在衬底中形成抗蚀剂图案。 基板具有多个以二维排列的加热元件。 加热单元热处理暴露的基板。 控制器（30）基于所测量的抗蚀剂图案的线宽来补偿加热单元的设定温度并控制加热单元。