公开(公告)号：KR1020050010786A

公开(公告)日：2005-01-28

申请号：KR1020047017915

申请日：2003-05-05

Applicant: 사이머 엘엘씨

Inventor： 다스팔라시피. ,  지오바날디마르코 ,  프란시스그레고리 ,  돈허클베리비. ,  엘란센킬피. ,  넬슨존더블유. ,  샌드스트롬리차드엘. ,  오쇼프알렉산더아이.

IPC: H01L21/027

CPC classification number: G03F7/7055 ,  G02B26/0816 ,  G02B27/0972 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70058 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/036 ,  H01S3/041 ,  H01S3/0971 ,  H01S3/136 ,  H01S3/137 ,  H01S3/225 ,  H01S3/2333 ,  H01S3/2366 ,  H01S3/2308

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source with a beam delivery to a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. Preferred embodiments include equipment for beam attenuation, equipment for automatic feedback beam alignment and equipment for accurate optics module positioning at installation and during maintenance. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.