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公开(公告)号：KR101084265B1
公开(公告)日：2011-11-17
申请号：KR1020090127307
申请日：2009-12-18
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L31/115 , H01L29/786
CPC classification number: H01L31/022408 , H01L27/1461 , H01L27/14632 , H01L27/14643 , H01L27/14663 , H01L27/14692 , H01L31/119
Abstract: An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.
Abstract translation: 作为本发明的示例性实施例构造的X射线检测器包括：半导体层;数据线，包括覆盖半导体层的第一部分的源电极，与源电极相对设置的漏电极，形成的第一下电极 在半导体层的第二部分的上部和栅绝缘层上并且从漏电极延伸，钝化层形成在包括漏电极的下电极的一部分的上部上。 此外，第二下电极靠近栅电极形成。 作为本发明示例性实施例构造的X射线检测器包括形成在钝化层上并靠近栅电极放置的第二下电极。 设置二极管的区域可以被最大化，并且泄漏电流的量可以被减少。
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公开(公告)号：KR1020110087856A
公开(公告)日：2011-08-03
申请号：KR1020100007488
申请日：2010-01-27
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/14663
Abstract: PURPOSE: An X-ray detector is provided to minimize electrical noise in a wiring by reducing the delay of a data signal and a gate signal. CONSTITUTION: A gate line(121) is extended on a substrate in a first direction. A gate electrode(122) is extended from the gate line. A semiconductor layer(130) is located on the gate electrode. A source electrode(141) and a drain electrode(142) are located on the semiconductor layer. A bottom electrode is extended from the drain electrode. A photo diode is located on the bottom electrode. A first insulation layer is located on the source electrode and the drain electrode and includes a first opening unit(151) which exposes the source electrode. A data line is extended in a second direction, crosses the gate line, and is connected to the source electrode through a first opening unit.
Abstract translation: 目的：提供X射线检测器，通过减少数据信号和门信号的延迟来最小化布线中的电噪声。 构成：栅极线（121）在第一方向上在衬底上延伸。 栅电极（122）从栅极线延伸。 半导体层（130）位于栅电极上。 源电极（141）和漏电极（142）位于半导体层上。 底部电极从漏电极延伸。 光电二极管位于底部电极上。 第一绝缘层位于源电极和漏电极上，并且包括暴露源电极的第一开口单元（151）。 数据线在第二方向上延伸，穿过栅极线，并通过第一开口单元连接到源电极。
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公开(公告)号：KR101094288B1
公开(公告)日：2011-12-19
申请号：KR1020100007488
申请日：2010-01-27
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/14663
Abstract: 엑스레이 검출 장치는 기판, 기판 상에서 제1 방향으로 연장된 게이트 라인, 게이트 라인으로부터 연장된 게이트 전극, 게이트 전극 상에 위치하는 반도체층, 반도체층 상에 위치하는 소스 전극 및 드레인 전극, 드레인 전극으로부터 연장된 하부 전극, 하부 전극 상에 위치하는 포토 다이오드, 소스 전극 및 드레인 전극 상에 위치하며, 소스 전극을 노출하는 제1 개구부를 포함하는 제1 절연층, 제1 절연층 상에서 제1 방향과 교차하는 제2 방향으로 연장되어 제1 절연층을 사이에 두고 게이트 라인과 교차하며, 제1 개구부를 통해 소스 전극과 연결되는 데이터 라인을 포함한다.
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公开(公告)号：KR1020110070473A
公开(公告)日：2011-06-24
申请号：KR1020090127307
申请日：2009-12-18
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L31/115 , H01L29/786
CPC classification number: H01L31/022408 , H01L27/1461 , H01L27/14632 , H01L27/14643 , H01L27/14663 , H01L27/14692 , H01L31/119 , H01L27/14658
Abstract: PURPOSE: An X-ray detector is provided to implement a high fill factor by maximizing the arrangement area of a pin diode used as an optical sensor. CONSTITUTION: A gate line connected to a gate electrode(124) is formed on a substrate(110). A gate insulating layer(140) is formed on the upper side of the gate electrode and the gate line. A semiconductor layer(154) is laminated on a part of the gate insulating layer. A data line includes a source electrode(173) to cover a first part of the semiconductor layer. A resistive contact member(163) is formed on the semiconductor layer.
Abstract translation: 目的：提供X射线检测器，通过最大化用作光学传感器的pin二极管的布置面积来实现高填充因子。 构成：连接到栅极（124）的栅极线形成在基板（110）上。 栅极绝缘层（140）形成在栅电极和栅极线的上侧。 半导体层（154）层叠在栅极绝缘层的一部分上。 数据线包括覆盖半导体层的第一部分的源电极（173）。 在半导体层上形成电阻式接触元件（163）。
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