公开(公告)号：KR1020080041796A

公开(公告)日：2008-05-14

申请号：KR1020060109851

申请日：2006-11-08

Applicant: 삼성전기주식회사

Inventor： 정명구 ,  김동준 ,  송호영

IPC: H01L33/06 ,  H01L33/08 ,  H01L21/20

Abstract: A method for forming a GaN type semiconductor light emitting device is provided to reduce defects by re-growing a second n type GaN layer on an etched surface. A substrate(100) for growing a GaN type semiconductor material is prepared. A first n type GaN layer(120a) is formed on the substrate. An etch process is performed to etch an upper surface of the first n type GaN layer. A second n type GaN layer(120b) is formed by performing a re-grow process on the etched part of the first n type GaN layer. An active region(130) is formed on the second n type GaN layer. A p type GaN layer(140) is formed on the active layer. A buffer layer forming process is performed to form a buffer layer(110) on the substrate before the first n type GaN layer is formed on the substrate.

Abstract translation: 提供一种用于形成GaN型半导体发光器件的方法，以通过在蚀刻表面上再生长第二n型GaN层来减少缺陷。 制备用于生长GaN型半导体材料的衬底（100）。 在基板上形成第一n型GaN层（120a）。 执行蚀刻工艺以蚀刻第一n型GaN层的上表面。 通过对第一n型GaN层的蚀刻部分进行再生长工序来形成第二n型GaN层（120b）。 在第二n型GaN层上形成有源区（130）。 在有源层上形成p型GaN层（140）。 在衬底上形成第一n型GaN层之前，进行缓冲层形成工艺以在衬底上形成缓冲层（110）。

公开(公告)号：KR100845549B1

公开(公告)日：2008-07-10

申请号：KR1020070006768

申请日：2007-01-22

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/08

Abstract: A white light emitting device and a manufacturing method thereof are provided to simplify a package and a control circuit thereof by forming three kinds of emission layers within one light emitting device. A first clad layer(130) is formed on a substrate(110) having a transparent characteristic. An active layer(140) is formed on a predetermined region of the first clad layer. The active layer includes a blue emission layer(141), a green emission layer(142), and a red emission layer(143). A second clad layer(150) is formed on the active region. An oxide insulation layer(144) is formed in a boundary between the emission layers in order to insulate electrically the emission layers. A plurality of first electrodes are formed on the first clad layer and are separated electrically from each other by using the oxide insulating layer. A plurality of second electrodes(170) are formed on the second clad layer and are separated electrically from each other by using the oxide insulating layer.

Abstract translation: 提供白色发光器件及其制造方法以通过在一个发光器件内形成三种发光层来简化封装及其控制电路。 在具有透明特性的基板（110）上形成第一覆盖层（130）。 在第一包层的预定区域上形成有源层（140）。 有源层包括蓝色发射层（141），绿色发射层（142）和红色发射层（143）。 在有源区上形成第二覆层（150）。 在发射层之间的边界处形成氧化物绝缘层（144），以便使发射层电绝缘。 多个第一电极形成在第一覆盖层上并且通过使用氧化物绝缘层彼此电隔离。 多个第二电极（170）形成在第二覆盖层上，并且通过使用氧化物绝缘层彼此电隔离。

公开(公告)号：KR100838755B1

公开(公告)日：2008-06-17

申请号：KR1020060109851

申请日：2006-11-08

Applicant: 삼성전기주식회사

Inventor： 정명구 ,  김동준 ,  송호영

IPC: H01L33/06 ,  H01L33/08 ,  H01L21/20

Abstract: 본 발명은 질화갈륨계 반도체 발광소자의 제조방법에 관한 것으로서, 특히, 질화갈륨계 반도체 물질을 성장시키기 위한 기판을 마련하는 단계와, 상기 기판 상에 제1 n형 GaN층을 형성하는 단계와, 상기 제1 n형 GaN층의 상부 표면을 소정 두께 식각하는 단계와, 상기 식각된 제1 n형 GaN층 상에 재성장 공정을 통해 제2 n형 GaN층을 형성하는 단계와, 상기 제2 n형 GaN층 상에 활성층을 형성하는 단계 및 상기 활성층 상에 p형 GaN층을 형성하는 단계;를 포함하는 질화갈륨계 반도체 발광소자의 제조방법에 관한 것이다.
GaN, 결정성장, 격자정합

公开(公告)号：KR100893188B1

公开(公告)日：2009-04-16

申请号：KR1020070024529

申请日：2007-03-13

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/02

Abstract: 본 발명은 정전기 파괴(Electrostatic Discharge: ESD) 특성을 개선한 GaN 기반 질화물 발광소자 및 그 제조방법에 관한 것으로, 기판과, 상기 기판 상에 형성되며, 그 내부에 유전체층을 포함하는 제1 도전형 질화물 반도체층과, 상기 제1 도전형 질화물 반도체층 상에 형성된 활성층과, 상기 활성층 상에 형성된 제2 도전형 질화물 반도체층과, 상기 제2 도전형 질화물 반도체층 상에 형성된 투명전극층, 및 상기 제1, 제2 도전형 질화물 반도체 상에 각각 형성된 제1, 제2전극을 포함하는 질화물계 반도체 발광소자 및 그 제조방법을 제공한다.
LED, 질화물, GaN, 정전기, ESD, 유전체

公开(公告)号：KR100868362B1

公开(公告)日：2008-11-12

申请号：KR1020070000803

申请日：2007-01-03

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/08 ,  H01L33/02

Abstract: 본 발명은 백색 발광소자에 관한 것으로서, 투광성을 갖는 기판 상에 형성된 제1 클래드층; 상기 제1 클래드층 상의 소정 영역에 형성되고, 상기 제1 클래드층에 대하여 병렬적이거나 직병렬적, 또는 병직렬적으로 형성되는 적어도 하나 이상씩의 청색 발광층, 녹색 발광층 및 적색 발광층을 포함하는 활성층; 상기 활성층이 형성되지 않은 제1 클래드층 상에 형성된 제1 전극; 상기 활성층 상에 형성된 제2 클래드층; 및 상기 제2 클래드층 상에 형성된 제2 전극; 을 포함하는 백색 발광소자 및 그 제조방법을 제공한다
백색 발광소자, 청색 발광층, 녹색 발광층, 적색 발광층, 병렬적

公开(公告)号：KR1020080065326A

公开(公告)日：2008-07-14

申请号：KR1020070002293

申请日：2007-01-09

Applicant: 삼성전기주식회사

Inventor： 정명구 ,  김용천

IPC: H01L33/20 ,  H01L33/02

Abstract: A method for fabricating a nitride semiconductor LED(light emitting diode) is provided to maximize optical extraction efficiency by efficiently discharging the photons generated from an active layer to the outside. An n-type nitride semiconductor layer is formed on a substrate(100). An active layer(130) is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer(140a) is formed on the active layer. A predetermined thickness of the first p-type nitride semiconductor layer is etched to form a surface unevenness of a predetermined shape. A second p-type nitride semiconductor(140b) is re-grown along the surface step of the first p-type nitride semiconductor layer having the surface unevenness. The first p-type nitride semiconductor layer can be etched by a dry etch process or a wet etch process.

Abstract translation: 提供了一种用于制造氮化物半导体LED（发光二极管）的方法，以通过将从有源层产生的光子有效地放电到外部来最大化光学提取效率。 在基板（100）上形成n型氮化物半导体层。 在n型氮化物半导体层上形成有源层（130）。 在有源层上形成第一p型氮化物半导体层（140a）。 蚀刻第一p型氮化物半导体层的预定厚度以形成预定形状的表面凹凸。 第二p型氮化物半导体（140b）沿具有表面不均匀的第一p型氮化物半导体层的表面台阶重新生长。 第一p型氮化物半导体层可以通过干蚀刻工艺或湿蚀刻工艺进行蚀刻。

公开(公告)号：KR1020080064062A

公开(公告)日：2008-07-08

申请号：KR1020070000803

申请日：2007-01-03

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/08 ,  H01L33/02

Abstract: A white light emitting device and a method for manufacturing the same are provided to easily emit white light by using an active layer having stacked emission layers. A white light emitting device includes a first clad layer(130), an active layer(140), a first electrode(170), a second clad layer(150), and a second electrode. The first clad layer is formed on a substrate. The active layer is formed on a predetermined region on the first clad layer. The active layer includes at least one blue emission layer, green emission layer, and red emission layer formed parallel with the first clad layer. The first electrode is formed on the first clad layer on which the active layer is not formed. The second electrode is formed on the second clad layer.

Abstract translation: 提供了一种白色发光器件及其制造方法，通过使用具有层叠发射层的有源层来容易地发出白光。 白色发光器件包括第一覆盖层（130），有源层（140），第一电极（170），第二覆盖层（150）和第二电极。 第一覆盖层形成在基板上。 有源层形成在第一覆盖层上的预定区域上。 有源层包括与第一覆盖层平行形成的至少一个蓝色发射层，绿色发射层和红色发射层。 第一电极形成在其上未形成有源层的第一覆盖层上。 第二电极形成在第二覆盖层上。

公开(公告)号：KR100809229B1

公开(公告)日：2008-03-05

申请号：KR1020060114675

申请日：2006-11-20

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/22

Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to decrease a potential density and to improve crystalline and optical characteristics by forming grooves on an active layer. A substrate(11) for nitride single-crystal growing is prepared. An n-type nitride semiconductor layer(13) is grown on the substrate. One or more quantum barrier layers and one or more quantum well layers are alternatively grown on the n-type nitride semiconductor layer to form an active layer(14). One or more grooves(P) are formed on the active layer. A p-type nitride semiconductor layer(16) is grown on the active layer. The p-type nitride semiconductor layer having the active layer gap-fills the grooves. A depth of the groove is less than a thickness of the active layer.

Abstract translation: 提供氮化物半导体发光器件及其制造方法以通过在有源层上形成沟槽来降低电位密度并提高晶体和光学特性。 制备用于氮化物单晶生长的衬底（11）。 在衬底上生长n型氮化物半导体层（13）。 在n型氮化物半导体层上交替地生长一个或多个量子势垒层和一个或多个量子阱层，以形成有源层（14）。 在活性层上形成一个或多个凹槽（P）。 在有源层上生长p型氮化物半导体层（16）。 具有有源层间隙的p型氮化物半导体层填充沟槽。 凹槽的深度小于有源层的厚度。

公开(公告)号：KR1020080083829A

公开(公告)日：2008-09-19

申请号：KR1020070024529

申请日：2007-03-13

Applicant: 삼성전기주식회사

Inventor： 정명구

IPC: H01L33/02

Abstract: A nitride semiconductor light emitting device and a fabrication method thereof are provided to improve characteristics thereof by increasing diffusion of current with a dielectric layer. A first conductive type nitride semiconductor layer(113) including a dielectric layer(120) is formed on a substrate(110). An active layer(114) is formed on the first conductive type nitride semiconductor layer. A second conductive type nitride semiconductor layer(115) is formed on the active layer. A transparent electrode layer(116) is formed on the second conductive type nitride semiconductor layer. A first and second electrodes(117,118) are formed on the first and second conductive type nitride semiconductor layers, respectively.

Abstract translation: 提供一种氮化物半导体发光器件及其制造方法，以通过增加电介质层的扩散来提高其特性。 在基板（110）上形成包括电介质层（120）的第一导电型氮化物半导体层（113）。 在第一导电型氮化物半导体层上形成有源层（114）。 在有源层上形成第二导电型氮化物半导体层（115）。 在第二导电型氮化物半导体层上形成透明电极层（116）。 分别在第一和第二导电型氮化物半导体层上形成第一和第二电极（117,118）。

公开(公告)号：KR100847847B1

公开(公告)日：2008-07-23

申请号：KR1020070006767

申请日：2007-01-22

Applicant: 삼성전기주식회사

Inventor： 정명구 ,  곽창훈

IPC: H01L33/08 ,  H01L33/02

Abstract: A white light emitting device is provided to improve color repeatability by forming blue and green active layers with different wavelengths in one LED(light emitting diode) chip and by using a red phosphor together with the LED chip. A nitride semiconductor layer(330) of a first conductivity type is formed on a substrate(310). An active layer(340) includes a first active layer(340a) made of a plurality of patterns exposing a predetermined region of the nitride semiconductor layer of the first conductivity type and a second active layer(340b) having a different wavelength from that of the first active layer. The first active layer is formed on the first nitride semiconductor layer of the first conductivity type, and the second active layer is formed in a space between the patterns of the first active layer. A nitride semiconductor layer(350) of a second conductivity type is formed on the active layer. First and second electrodes(360,370) are respectively formed on the nitride semiconductor layers of the first and second conductivity types. A molding material(260) is formed on the resultant structure, including a phosphor excited by emission light of the first and second active layers. The first active layer can have one planar shape selected from a group of a sphere, a polygon, a strip type and a composition thereof.

Abstract translation: 提供了一种白色发光器件，通过在一个LED（发光二极管）芯片中形成具有不同波长的蓝色和绿色有源层并通过与LED芯片一起使用红色荧光体来提高颜色重复性。 在基板（310）上形成第一导电类型的氮化物半导体层（330）。 有源层（340）包括由暴露第一导电类型的氮化物半导体层的预定区域的多个图案制成的第一有源层（340a）和与第一有源层（340a）的波长不同的第二有源层（340b） 第一活动层。 第一有源层形成在第一导电类型的第一氮化物半导体层上，第二有源层形成在第一有源层的图案之间的空间中。 在有源层上形成第二导电类型的氮化物半导体层（350）。 第一和第二电极（360,370）分别形成在第一和第二导电类型的氮化物半导体层上。 在所得结构上形成模塑材料（260），其包括由第一和第二活性层的发射光激发的荧光体。 第一活性层可以具有选自球体，多边形，带状及其组成的一组平面形状。