公开(公告)号：KR100425341B1

公开(公告)日：2004-03-31

申请号：KR1020010001550

申请日：2001-01-11

Applicant: 삼성전기주식회사

Inventor： 이성남 ,  박용조 ,  남옥현 ,  이인환 ,  이원석 ,  조시연 ,  손철수

IPC: H01L33/08 ,  H01L33/06

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/3403 ,  H01S5/34333

Abstract: A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Abstract translation: 提供了一种半导体发光器件，其包括用于减少由使用GaN在半导体发光器件中注入多个载流子引起的应变和载流子溢出的装置。 该半导体发光器件包括通过沉积AlGaN / GaN双层预定次数形成的多量子垒，或者通过在有源层的上侧或下侧形成应变补偿多量子垒， / InGaN双层预定次数，并且不需要p型覆盖层。

公开(公告)号：KR1020010077971A

公开(公告)日：2001-08-20

申请号：KR1020010001550

申请日：2001-01-11

Applicant: 삼성전기주식회사

Inventor： 이성남 ,  박용조 ,  남옥현 ,  이인환 ,  이원석 ,  조시연 ,  손철수

IPC: H01L33/08 ,  H01L33/06

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/3403 ,  H01S5/34333

Abstract: PURPOSE: A light emission device of nitride semiconductor is provided to prevent carriers from overflowing in an active region by using a multiple quantum barrier or an electron cutoff layer. CONSTITUTION: Active layers(5, 6) are made of a compound semiconductor of gallium nitride. A plurality of multiple quantum barriers(7, 8) are formed on the upper side of the active layer(5, 6) or formed on the lower side of the active layer, so that the energy band having the plurality of multiple quantum barriers(7, 8) is obtained. A light wave guide layer(9) of gallium nitride is formed on the active layer(7, 8) or the upper side and the lower side of the multiple quantum barriers(7, 8). The active layer(7, 8) is formed as the structure of a multiple quantum well.

Abstract translation: 目的：提供氮化物半导体的发光器件，以通过使用多量子势垒或电子截止层来防止载流子在有源区域溢出。 构成：有源层（5,6）由氮化镓的化合物半导体制成。 多个量子势垒（7,8）形成在有源层（5,6）的上侧，或形成在有源层的下侧，使得具有多个多个量子势垒的能带（ 7,8）。 在多个量子势垒（7,8）的有源层（7,8）或上侧和下侧形成氮化镓的光波导层（9）。 活性层（7,8）形成为多量子阱的结构。