公开(公告)号：KR1020030077753A

公开(公告)日：2003-10-04

申请号：KR1020020016602

申请日：2002-03-27

Applicant: 삼성전기주식회사

Inventor： 안승도 ,  김경수 ,  조지만

IPC: H01L23/02

Abstract: PURPOSE: A wafer level package method in a micro sensor is provided to be capable of solving metal line problems due to the under-cut phenomenon generated by a sand blaster process by forming a line hole at the rear surface of an SOG(Spin On Glass) wafer. CONSTITUTION: After depositing a silicon layer(2) having the first predetermined thickness at the upper potion of a glass wafer(1) having the second predetermined thickness, a moving part, a fixing point, and an encapsulated bonding part are defined by carrying out a mask process and an etching process. The moving part is released by etching the glass wafer using an HF solution. At this time, the remaining silicon layer is used as an etching mask. A hole is formed at the predetermined portion of the rear surface of the glass wafer by using a sand blaster process. A cap glass layer(3) having a cavity corresponding to the moving part, is bonded to the remaining silicon layer. Then, a metal contact part(4) is formed by depositing a metal layer on the surface of the hole formed on the rear surface of the glass wafer.

Abstract translation: 目的：提供微型传感器中的晶片级封装方法，以便通过在SOG的后表面上形成线孔（Spin On Glass）来解决由于喷砂工艺产生的切割现象而导致的金属线问题 ）晶圆。 构成：在具有第二预定厚度的玻璃晶片（1）的上部放置具有第一预定厚度的硅层（2）之后，通过执行移动部分，固定点和封装的粘结部分 掩模工艺和蚀刻工艺。 通过使用HF溶液蚀刻玻璃晶片来释放移动部分。 此时，剩余的硅层用作蚀刻掩模。 通过使用喷砂工艺在玻璃晶片的后表面的预定部分处形成孔。 具有与移动部对应的空腔的盖玻璃层（3）与剩余的硅层接合。 然后，通过在形成在玻璃晶片的后表面上的孔的表面上沉积金属层来形成金属接触部分（4）。

公开(公告)号：KR100444235B1

公开(公告)日：2004-08-16

申请号：KR1020020078223

申请日：2002-12-10

Applicant: 삼성전기주식회사

Inventor： 김경수 ,  안승도 ,  조지만

IPC: G01P1/02

CPC classification number: G01R33/0286 ,  G01D21/02 ,  G01P15/125 ,  G01P15/18 ,  G01R33/02

Abstract: A method and a magnetic field and acceleration sensor for simultaneously sensing magnetism and acceleration are disclosed, the method comprising the steps of applying a current to first and second movable structures which are movable in a first direction, spaced from fixedly arranged first and second sensing electrodes, respectively, and arranged in a plane perpendicular to the first direction, applying magnetic field and/or acceleration signals to the first and second movable structures, detecting capacitance changes from the first and second sensing electrodes, the capacitance changes being caused by the distance change between the first and second movable structures and the first and second sensing electrodes, respectively, outputting a magnetic field signal by subtracting a signal detected from the second sensing electrode from a signal detected from the first sensing electrode, and outputting an acceleration signal by adding the signals detected from the first and second sensing electrodes.

Abstract translation: 公开了一种用于同时感测磁性和加速度的方法和磁场及加速度传感器，所述方法包括以下步骤：向可在第一方向上移动的第一和第二可移动结构施加电流，所述第一和第二可移动结构与固定布置的第一和第二感测电极 并且布置在垂直于第一方向的平面中，向第一和第二可移动结构施加磁场和/或加速度信号，检测来自第一和第二感测电极的电容变化，电容变化由距离变化引起 在第一和第二可移动结构与第一和第二感测电极之间分别通过从第一感测电极检测到的信号中减去从第二感测电极检测到的信号来输出磁场信号， 从第一和第二感测e检测到的信号 lectrodes。

公开(公告)号：KR1020040050399A

公开(公告)日：2004-06-16

申请号：KR1020020078223

申请日：2002-12-10

Applicant: 삼성전기주식회사

Inventor： 김경수 ,  안승도 ,  조지만

IPC: G01P1/02

CPC classification number: G01R33/0286 ,  G01D21/02 ,  G01P15/125 ,  G01P15/18 ,  G01R33/02

Abstract: PURPOSE: A method and apparatus for detecting magnetic signal and acceleration signal simultaneously are provided to detect a magnetic signal and an acceleration signal simultaneously using one MEMS diaphragm type sensor. CONSTITUTION: The first and the second diaphragm structure(31,32) move along a constant direction by a physical force and are arranged in parallel each other. The first and the second sensing electrode(37,38) are fixed on a position separated from the first and the second diaphragm structure. An input electrode(33) is connected to one end of the first diaphragm structure and a current of a fixed frequency is inputted to the input electrode. A ground electrode(34) is connected to one end of the second diaphragm structure. And common electrodes(35,36) transfer a current transferred from the first diaphragm structure to another end of the second diaphragm structure.

Abstract translation: 目的：提供一种用于同时检测磁信号和加速度信号的方法和装置，以使用一个MEMS膜片式传感器同时检测磁信号和加速度信号。 构成：第一和第二隔膜结构（31,32）通过物理力沿恒定方向移动并且彼此平行布置。 第一和第二感测电极（37,38）固定在与第一和第二隔膜结构分离的位置上。 输入电极（33）连接到第一光阑结构的一端，固定频率的电流被输入到输入电极。 接地电极（34）连接到第二隔膜结构的一端。 并且公共电极（35,36）将从第一膜结构传递的电流传递到第二膜结构的另一端。

公开(公告)号：KR1020030077754A

公开(公告)日：2003-10-04

申请号：KR1020020016603

申请日：2002-03-27

Applicant: 삼성전기주식회사

Inventor： 안승도 ,  김경수 ,  조지만

IPC: H01L29/84

CPC classification number: B81C1/00301 ,  B81B2201/025 ,  B81B2207/095 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/038 ,  G01C19/5783 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10T428/24322

Abstract: PURPOSE: A micro inertia sensor and a method for manufacturing the same are provided to be capable of reducing the size of the sensor and simplifying manufacturing processes by improving the structure of the sensor. CONSTITUTION: A micro inertia sensor is provided with a lower glass substrate(1), a lower silicon layer(2) including the first edge part(2a), the first fixing part(2b), a side motion detecting structure(2c), formed at the upper portion of the lower glass substrate, an upper silicon layer(4) includes the second edge part(4a), the second fixing part(4b), and an upper detecting electrode(4c) corresponding to the first edge part, the first fixing part, the side motion detecting structure, respectively, formed at the upper portion of the lower silicon layer, an adhesive layer(3) located between the lower and upper silicon layer, and an upper glass substrate(5) including a conductive line(6) and a via hole(5a), formed at the upper portion of the resultant structure.

Abstract translation: 目的：提供微惯性传感器及其制造方法，以能够通过改进传感器的结构来减小传感​​器的尺寸并简化制造过程。 构造：微惯性传感器设置有下玻璃基板（1），包括第一边缘部分（2a），第一固定部分（2b），侧运动检测结构（2c）的下硅层（2） 形成在下玻璃基板的上部，上硅层（4）包括第二边缘部分（4a），第二固定部分（4b）和对应于第一边缘部分的上部检测电极（4c） 第一固定部分，分别形成在下硅层的上部的侧运动检测结构，位于下硅层和上硅层之间的粘合剂层（3）和包括导电的上玻璃基板（5） 线（6）和形成在所得结构的上部的通孔（5a）。