公开(公告)号：KR1020070008766A

公开(公告)日：2007-01-18

申请号：KR1020050062531

申请日：2005-07-12

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01L21/3065

CPC classification number: H01J37/32633 ,  H01J37/32651 ,  H01L21/67069

Abstract: An apparatus for fabricating a semiconductor is provided to maintain uniform RF VPP while sufficiently enlarging a cap between a depo shield and an end part of the outer circumference of a baffle plate by reducing the outer diameter of the depo shield. A flange(31) which is extended by a predetermined width to the inside is formed of a flat ring type on the inner circumferential surface of a depo shield(30). The flange overlaps a part of a baffle shield in a vertical line. The flange is located in a position higher than the most increased position of a baffle plate(60), having an inner diameter smaller than the outer diameter of the baffle plate and greater than the inner diameter of the baffle plate.

Abstract translation: 提供一种用于制造半导体的装置，以通过减小屏蔽罩的外径，在挡板和挡板的外周的端部之间充分扩大盖的同时保持均匀的RF VPP。 在挡板（30）的内​​周面上形成有以平环形式延伸到内部的预定宽度的凸缘（31）。 凸缘在垂直线上与挡板的一部分重叠。 凸缘位于比挡板（60）的最大增加位置高的位置，该挡板的内径小于挡板的外径，大于挡板的内径。

公开(公告)号：KR100599045B1

公开(公告)日：2006-07-12

申请号：KR1020010013807

申请日：2001-03-16

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01L21/02

Abstract: 배플을 포함하는 반도체 제조에서 패턴 형성을 위한 식각 장치가 개시되어 있다. 상기 장치는 가공 챔버와 진공 챔버를 포함한다. 상기 가공 챔버에는 척이 설치되어 있다. 그리고, 상기 장치는 막들을 식각할 때 상기 가공 챔버와 진공 챔버를 경계짓는 위치에 상기 가공 챔버 내측을 둘러싸도록 설치되는 제1배플과, 상기 척의 원주면을 둘러싸도록 설치되고, 상기 막들을 식각할 때 상기 제1배플의 원주면과 면접하여 상기 가공 챔버와 진공 챔버를 경계짓는 제2배플을 포함한다. 또한, 상기 척 및 제2배플을 상기 가공 챔버 상측 및 하측으로 리프팅시키는 리프터를 포함한다. 따라서, 제1배플 및 제2배플의 면접 및 격리를 통하여 반응 부산물을 용이하게 배기시킬 수 있다.

公开(公告)号：KR1020050049694A

公开(公告)日：2005-05-27

申请号：KR1020030083392

申请日：2003-11-22

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01L21/3065

Abstract: 플라즈마 식각설비를 제공한다. 이 플라즈마 식각설비는 반응가스가 공급되는 프로세스챔버와, 프로세스챔버의 상측에 마련되되 반응가스가 플라즈마 가스상태로 변환되도록 소정전력이 인가되고 상ㆍ하부가 분리가능하게 형성된 상부전극과, 상부전극으로부터 소정간격 이격되도록 프로세스챔버의 하측에 마련되며 소정전력이 인가되는 하부전극 및, 하부전극에 설치되며 웨이퍼가 안착되는 정전척을 포함한다.

公开(公告)号：KR1020050019219A

公开(公告)日：2005-03-03

申请号：KR1020030056858

申请日：2003-08-18

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01L21/3065

Abstract: PURPOSE: A chamber apparatus having an improved upper electrode part is provided to prevent the excessive deposition of polymer on the surface thereof by providing an inclined surface. CONSTITUTION: A wafer(100) to be processed is put into a chamber(300). On opposite side of the wafer, the chamber is provided with a first surface, a second surface, an inclined surface and an upper electrode part. The first surface(510) is provided with injection holes for injecting the process gas to the wafer surface. The second surface(530) is formed on the wall of chamber. The inclined surface(520) is formed between the first surface and the second surface. The upper electrode(500) is connected with an electric power to excite the process gas into plasma.

Abstract translation: 目的：提供具有改进的上电极部分的室装置，以通过提供倾斜表面来防止聚合物在其表面上的过度沉积。 构成：将待处理的晶片（100）放入室（300）中。 在晶片的相对侧，腔室设置有第一表面，第二表面，倾斜表面和上电极部分。 第一表面（510）设置有用于将处理气体注入晶片表面的注入孔。 第二表面（530）形成在室壁上。 倾斜表面（520）形成在第一表面和第二表面之间。 上电极（500）与电力连接，以将工艺气体激发成等离子体。

公开(公告)号：KR1020020087757A

公开(公告)日：2002-11-23

申请号：KR1020010026756

申请日：2001-05-16

Applicant: 삼성전자주식회사

Inventor： 김남헌 ,  박수관

IPC: H01L21/306

Abstract: PURPOSE: An apparatus of manufacturing a semiconductor device having a GDP is provided to prevent leakage of helium and process fail in a thin film formation and an etching process. CONSTITUTION: The apparatus comprises a GDP(40), an electrostatic chuck, a gas supplier, and a chamber for thin film formation or etching. The inner part(42) of the GDP is consists of quartz and the outer part(46) of it is covered with a protection layer(teflon) in order to prevent a damage caused by thin film formation or etching process.

Abstract translation: 目的：提供一种制造具有GDP的半导体器件的装置，以防止氦泄漏，并且在薄膜形成和蚀刻工艺中处理失败。 构成：该装置包括GDP（40），静电卡盘，气体供应器和用于薄膜形成或蚀刻的室。 GDP的内部部分（42）由石英组成，其外部部分（46）被保护层（特氟隆）覆盖，以防止由薄膜形成或蚀刻过程造成的损坏。

公开(公告)号：KR1019940010166B1

公开(公告)日：1994-10-22

申请号：KR1019910012539

申请日：1991-07-22

Applicant: 삼성전자주식회사

Inventor： 송운영 ,  김남헌

IPC: H01S5/30

Abstract: The method comprises the steps of (A) forming current-limiting layer (33) on the P-type GaAs substrate, (B) forming P (35), P+ (37), N (39), N+ (41) type AlGaAs layers in the successive order, (C) forming a window on the N+ GaAs layer by photolithography, (D) forming gaps (51) and mirror (47), (E) forming N-type electrode on N+-type GaAs layer, (F) forming P-type electrode on the back surface of the substrate, and (G) forming mirrors on the side surface (49). The laser is radiated in various directions through mirrors standing at various angles.

Abstract translation: 该方法包括以下步骤：（A）在P型GaAs衬底上形成限流层（33），（B）形成P（35），P +（37），N（39），N +（41）型AlGaAs （C）通过光刻形成在N + GaAs层上的窗口，（D）形成间隙（51）和反射镜（47），（E）在N +型GaAs层上形成N型电极（ F）在基板的背面形成P型电极，（G）在侧面（49）上形成反射镜。 激光通过以各种角度站立的反射镜在各个方向辐射。

公开(公告)号：KR1020030097022A

公开(公告)日：2003-12-31

申请号：KR1020020034148

申请日：2002-06-18

Applicant: 삼성전자주식회사

Inventor： 김남헌 ,  박수관

IPC: H01L21/02

Abstract: PURPOSE: Multi-chamber equipment for fabricating a semiconductor with a stabilized foreline pressure is provided to prevent a vacuum pump from breaking down so that contaminated process byproducts don't flow backward, by uniformly maintaining a stabilized foreline pressure. CONSTITUTION: A plurality of chambers(20a,20b,20c) for fabricating the semiconductor are prepared. A gas supply unit supplies gas to the respective chambers. A turbomolecular pump(30a,30b,30c) is installed in each chamber to pump the gas and process byproducts inside the chamber. The gas and process byproducts pumped by the turbomolecular pump are exhausted through the foreline(35a,35b,35c) in which a pressure gauge is installed. A nitrogen supply line(53a,53b,53c,56a,56b,56c) supplies ballast nitrogen to the turbomolecular pump and the foreline to prevent a backflow of the process gas and process byproducts inside the chamber. A regulator is so installed in each nitrogen supply line to uniformly maintain the stabilized pressure of the foreline in each chamber.

Abstract translation: 目的：提供用于制造具有稳定的前级管线压力的半导体的多腔室设备，以防止真空泵分解，使污染的过程副产物不会向后流动，通过均匀地保持稳定的前级管路压力。 构成：制备用于制造半导体的多个室（20a，20b，20c）。 气体供给单元向各个室供给气体。 涡轮分子泵（30a，30b，30c）安装在每个室中以泵送气体并处理室内的副产物。 通过涡轮分子泵泵送的气体和过程副产物通过其中安装压力计的前级管线（35a，35b，35c）排出。 氮气供应管线（53a，53b，53c，56a，56b，56c）向涡轮分子泵和前级管线供应压载氮，以防止工艺气体的回流和室内的加工副产物。 在每个氮气供应管线中安装调节器，以均匀地保持每个室中前级管线的稳定压力。

公开(公告)号：KR1020020089730A

公开(公告)日：2002-11-30

申请号：KR1020010028555

申请日：2001-05-24

Applicant: 삼성전자주식회사

Inventor： 김남헌 ,  최정민

IPC: H01L21/302

Abstract: PURPOSE: A wafer cooling system of etch apparatus is provided to prevent a remaining helium gas in a helium gas supply line from being exposed to the remaining plasma of a helium gas process chamber after an etch process is finished. CONSTITUTION: An electrostatic chuck(110) is installed in the inside of the chamber(100). The wafer(W) is loaded on the electrostatic chuck(110). The first hole is formed at a center of the electrostatic chuck(110). The second hole is formed at a peripheral part of the electrostatic chuck(110). The electrostatic chuck(110) has a predetermined pattern in order to etch selectively a surface of the wafer by plasma. The first helium supply line(120a) is connected with the hole formed at the center of the electrostatic chuck(110). The second helium supply line(120b) is connected with the hole formed at the peripheral part of the electrostatic chuck(110). The first and the second automatic valve(130a,130b) are installed at the first and the second helium supply line(120a,12b). A helium gas exhaust line(180) is connected with the chamber(100). The first throttle valve(190) is installed at the helium gas line(170). A manual throttle valve(200) is installed between the first throttle valve(190) and the helium gas storage container(150).

Abstract translation: 目的：提供蚀刻设备的晶片冷却系统，以防止氦气供应管线中的剩余氦气在蚀刻过程完成后暴露于氦气处理室的剩余等离子体。 构成：静电卡盘（110）安装在腔室（100）的内部。 晶片（W）被装载在静电卡盘（110）上。 第一孔形成在静电卡盘（110）的中心。 第二孔形成在静电卡盘（110）的周边部分。 静电卡盘（110）具有预定图案，以通过等离子体选择性地蚀刻晶片的表面。 第一氦气供应管线（120a）与形成在静电吸盘（110）的中心处的孔连接。 第二氦气供给管线（120b）与形成在静电吸盘（110）的周边部分的孔连接。 第一和第二自动阀（130a，130b）安装在第一和第二氦气供应管线（120a，12b）处。 氦气排气管（180）与室（100）连接。 第一节流阀（190）安装在氦气管线（170）上。 手动节流阀（200）安装在第一节流阀（190）和氦气储存容器（150）之间。

公开(公告)号：KR100337704B1

公开(公告)日：2002-05-22

申请号：KR1020000037961

申请日：2000-07-04

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01S5/32

Abstract: 본 발명은 전계흡수형 변조기가 집적된 반도체 레이저 다이오드에 관한 것으로, 불순물이 도핑되지 아니한 InP 및 InGaAs층을 성장시킨 후, 레이저 다이오드 영역과 변조기 영역의 필요 부분인 메탈 콘택층과 연결되는 부분에만 아연을 확산시키고 레이저 다이오드 영역과 변조기 영역의 중간 부분인 트렌치 영역의 InGaAs층만 선택적으로 용이하게 식각함으로써, 아이솔레이션 에칭 조절 및 이온 주입이 필요없게 된다.

公开(公告)号：KR1020000050846A

公开(公告)日：2000-08-05

申请号：KR1019990000974

申请日：1999-01-15

Applicant: 삼성전자주식회사

Inventor： 김남헌

IPC: H01L29/861 ,  H01S5/30

Abstract: PURPOSE: A method for manufacturing a buried heterostructure distributed feedback laser diode is provided to eliminate the need to grow an epitaxial layer on a diffraction grating by joining a first structure composed of the diffraction grating on a substrate to a second structure composed of epitaxial layers stacked on a flat substrate. CONSTITUTION: A method for manufacturing a buried heterostructure distributed feedback laser diode comprises three steps. The first step is to make a first structure by forming a diffraction grating having a constant height on an n-type substrate. The second step is to make a second structure by sequentially stacking a p-type cap layer, a undoped optical waveguide layer, an activation layer and an n-type optical waveguide layer on a p-type substrate. The third step is to join the first and second structures so that the diffraction grating on the n-type substrate and the undoped optical waveguide layer on the p-type substrate can be joined.

Abstract translation: 目的：提供一种用于制造掩埋异质结构分布反馈激光二极管的方法，以消除在衍射光栅上生长外延层的需要，该方法是将由基板上的衍射光栅组成的第一结构与由外延层堆叠的第二结构 在平坦的基板上。 构成：埋地异质结构分布反馈激光二极管的制造方法包括三个步骤。 第一步是通过在n型衬底上形成具有恒定高度的衍射光栅来制造第一结构。 第二步是通过在p型衬底上依次层叠p型帽层，未掺杂的光波导层，活化层和n型光波导层来制造第二结构。 第三步是连接第一和第二结构，使n型衬底上的衍射光栅和p型衬底上的未掺杂的光波导层可以接合。